Structures for a phase shifter
Structures for a phase shifter and methods of forming such structures. The structure comprises a phase shifter including a first section, a second section, and a strip laterally between the first section and the second section. The structure further comprises a waveguide core including a portion laterally between the first section and the second section of the phase shifter, and a dielectric layer between the waveguide core and the phase shifter. The strip is laterally offset relative to the portion of the waveguide core toward the first section of the phase shifter.
1 . A structure comprising:
a phase shifter including a first section, a second section, and a first strip laterally between the first section and the second section;
a waveguide core including a portion laterally between the first section and the second section, the first strip laterally offset relative to the portion of the waveguide core toward the first section; and
a first dielectric layer between the waveguide core and the phase shifter,
wherein the first strip, the first section, and the second section comprise a semiconductor material, and the waveguide core comprises a dielectric material.
2 . The structure of claim 1 wherein the first section and the second section are configured to generate heat.
3 . The structure of claim 1 wherein the first section and the second section have a first thickness, and the first strip has a second thickness that is less than the first thickness.
4 . The structure of claim 1 wherein the semiconductor material comprises silicon, and the dielectric material comprises silicon nitride.
5 . The structure of claim 1 further comprising:
a semiconductor substrate including a cavity beneath the phase shifter; and
a second dielectric layer disposed between the cavity and the phase shifter.
6 . The structure of claim 1 wherein the phase shifter includes a first slab layer extending from the first section toward the first strip, the first section has a first thickness, and the first slab layer has a second thickness that is less than the first thickness.
7 . The structure of claim 6 wherein the phase shifter includes a second slab layer extending from the second section toward the first strip, the second section has the first thickness, and the second slab layer has the second thickness.
8 . The structure of claim 7 wherein the first strip is laterally positioned between the first slab layer and the second slab layer.
9 . The structure of claim 8 wherein the first strip is separated from the first slab layer by a first gap, the first strip is separated from the second slab layer by a second gap, the first strip is disconnected across the first gap from the first slab layer, and the first strip is disconnected across the second gap from the second slab layer.
10 . The structure of claim 6 wherein the first strip is separated from the first slab layer by a first gap, and the first strip is disconnected across the first gap from the first slab layer.
11 . The structure of claim 6 wherein the first strip is separated from the first slab layer by a first gap, and the first strip is connected across the first gap to the first slab layer.
12 . The structure of claim 1 wherein the phase shifter includes a second strip laterally between the first section and the second section, and the second strip is laterally offset relative to the portion of the waveguide core toward the second section.
13 . The structure of claim 12 wherein the phase shifter includes a slab layer connecting the first section, the second section, the first strip, and the second strip.
14 . The structure of claim 1 wherein the phase shifter includes a second strip laterally between the first section and the second section, and the portion of the waveguide core is laterally positioned between the first strip and the second strip.
15 . The structure of claim 1 wherein the phase shifter includes a second strip adjacent to the waveguide core, and the first dielectric layer is positioned between the second strip and the first strip.
16 . The structure of claim 1 wherein the phase shifter includes a first p-n junction inside the first section and a second p-n junction inside the second section.
17 . A structure comprising:
a phase shifter including a first section, a second section, and a plurality of strips laterally between the first section and the second section;
a waveguide core including a portion laterally between the first section and the second section, the plurality of strips surrounding the portion of the waveguide core; and
a dielectric layer between the waveguide core and the phase shifter,
wherein the plurality of strips, the first section, and the second section comprise a semiconductor material, and the waveguide core comprises a dielectric material.
18 . The structure of claim 17 wherein the semiconductor material comprises silicon, and the dielectric material comprises silicon nitride.
19 . A method comprising:
forming a phase shifter including a first section, a second section, and a strip laterally between the first section and the second section;
forming a waveguide core including a portion laterally between the first section and the second section; and
wherein the strip is laterally offset relative to the portion of the waveguide core toward the first section, a dielectric layer is positioned between the waveguide core and the phase shifter, the strip, the first section, and the second section comprise a semiconductor material, and the waveguide core comprises a dielectric material.
20 . The structure of claim 16 wherein the semiconductor material comprises silicon, and the dielectric material comprises silicon nitride.