Apparatus for generating laser radiation with a lateral current injection laser arrangement and a cavity, and method for manufacturing the same

1 . An apparatus for generating laser radiation, comprising:

a semiconductor substrate,

an intermediate layer arranged on the semiconductor substrate; and

a Lateral Current Injection (LCI) laser arrangement arranged on the intermediate layer,

wherein the intermediate layer comprises a cavity extending at least under a laser strip of the LCI laser arrangement;

wherein the LCI laser arrangement comprises a first area with a first doping, and

wherein the LCI laser arrangement comprises a second area with a second doping,

wherein the first and the second doping are different; and

wherein the laser strip of the LCI laser arrangement is arranged laterally between the first area and the second area of the LCI laser arrangement, and

wherein the laser strip is configured to generate the laser radiation on the basis of a current that is laterally fed in by means of the first and second areas; and

wherein the LCI laser arrangement comprises at least one tunnel structure,

wherein the at least one tunnel structure is arranged in the first and/or the second area of the LCI laser arrangement; and

wherein the at least one tunnel structure extends from the cavity in the intermediate layer up to the surface, opposite the intermediate layer, of the LCI laser arrangement;

wherein the apparatus comprises a first contacting and a second contacting,

wherein the first contacting is arranged on the first area of the LCI laser arrangement, and

wherein the first contacting is configured to enable an electrical contact to the first area of the LCI laser arrangement, and

wherein the second contacting is arranged on the second area of the LCI laser arrangement, and

wherein the second contacting is configured to enable an electrical contact to the second area of the LCI laser arrangement; and

wherein the first contacting is arranged laterally between the tunnel structure and the laser strip of the LCI laser arrangement; and/or

wherein the second contacting is arranged laterally between the tunnel structure and the laser strip of the LCI laser arrangement.

2 . The apparatus according to claim 1 , wherein the intermediate layer is arranged directly on the substrate.

3 . The apparatus according to claim 1 ,

wherein the cavity is configured to optically confine the laser radiation in the laser strip of the LCI laser arrangement.

4 . The apparatus according to claim 1 ,

wherein the apparatus comprises a passivation layer, and

wherein the passivation layer is at least arranged partially on the surface, opposite the intermediate layer, of LCI laser arrangement.

5 . The apparatus according to claim 1 ,

wherein the apparatus comprises a contacting layer,

wherein the contacting layer comprises a doped semiconductor material, and

wherein the contacting layer is arranged on the surface, opposite the intermediate layer, of the substrate; and

wherein the contacting layer comprises a third contacting,

wherein the third contacting is configured to enable an electrical contact to the contacting layer; and

wherein the first contacting extends from the first area of the LCI laser arrangement to the contacting layer; and

wherein the third contacting is electrically connected to the first contacting via the doped semiconductor material; or

wherein the second contacting extends from the second area of the LCI laser arrangement to the contacting layer, and

wherein the third contacting is electrically connected to the second contacting via the doped semiconductor material.

6 . The apparatus according to claim 1 ,

wherein the laser strip of the LCI laser arrangement comprises at least one multi-quantum well package; and

wherein the laser strip of the LCI laser arrangement comprises waveguide layers; and

wherein the waveguide layers are semi-insulating waveguide layers, and wherein the semi-insulated waveguide layers are arranged vertically above and below the at least one multi-quantum well package.

7 . The apparatus according to claim 1 , wherein the cavity and/or the at least one tunnel structure comprises a filler; and

wherein the filler is configured to optically confine the laser radiation and the laser strip of the LCI laser arrangement.

8 . The apparatus according to claim 1 ,

wherein the substrate comprises indium phosphide; and/or

wherein the first and the second area of the LCI laser arrangement comprise indium phosphide; and/or

wherein the laser strip of the LCI laser arrangement comprises indium gallium arsenide phosphide; and/or

wherein the apparatus comprises a passivation layer, the passivation layer comprising silicon nitride; and/or

wherein the apparatus comprises a contacting layer, the contacting layer comprising indium phosphide with the first or the second doping.

9 . The apparatus according to claim 1 ,

wherein the apparatus comprises an optical component, and wherein the optical component and the LCI laser arrangement are monolithically integrated on the substrate; and

wherein the optical component is a photonic integrated circuit; and

wherein the LCI laser arrangement is optically coupled to the photonic integrated circuit; and

wherein the LCI laser arrangement is configured to provide the laser radiation for the photonic integrated circuit.