Earth energy systems and devices
View Patent ↗Systems, devices, and methods, for harvesting, storing, and using electricity from earth energy devices, particularly involving galvanic cells and antenna received energy. FIGS. 1 through 5 depict numerous technical features and embodiments for combination and utilization in said systems, devices, and methods.
1 . An antenna electricity harvesting system comprising:
an antenna receiver module circuit means selected from the group consisting of the circuit defined in block A of FIG. 4 a , and the circuit defined in block B of FIG. 4 b,
said antenna receiver module circuit means possessing a polarized capacitor denoted by reference designation C 1 unobviously installed in reverse polarity as shown in FIG. 4 a and FIG. 4 b,
a receiver array means comprising at least one antenna receiver module,
said receiver array means selected from the group consisting of block X of FIG. 4 a , and block X of FIG. 4 b,
said receiver array means antenna node input selected from the group consisting of an antenna, a substantially periodic pulsed electrical signal, a substantially periodic saw-tooth electrical signal, a substantially periodic electrically oscillating signal, substantially pulsed voltage from circuit node Vout of the circuit means of FIG. 3 a , substantially pulsed voltage from circuit node Vout of the circuit means of FIG. 3 b , substantially oscillating voltage from circuit node Vout of the circuit means of FIG. 3 d , a suitable galvanic battery cell system output, and a suitable galvanic powered integrated circuit system output.
2 . The antenna electricity harvesting system according to claim 1 further comprising:
at least one electrical load circuit or accessory electronic circuit selected from the group consisting of light emission circuits, ray emitters, lasers, sound emitters, ultra-sound emitters, speakers, receivers, detectors, sensors, oscillators, pulse train generators, spark gaps, excitable gases, gas filled bulbs, integrated circuits, vertically stacked integrated circuits, charging circuits, charge storage circuits, energy conversion circuits, circuit schematic means of FIGS. 3 a , 3 b , 3 c , 3 d , 3 e , 3 f , 3 g , 3 h , 3 i , 4 a , 4 b , 4 c , 4 d , 4 e , 4 f , 4 g , and effective mixtures thereof.
3 . The antenna electricity harvesting system according to claim 1 further comprising:
said antenna physical orientation selected from the group consisting of substantially parallel with earth ground surface, substantially perpendicular to earth ground, oriented both substantially parallel and perpendicular to earth ground, oriented in a substantially pancaked flat-wound spiral form, and oriented in a substantially spiraled form.
4 . The antenna electricity harvesting system according to claim 1 further comprising:
said antenna comprising electrically conductive cable or wire selected from the group consisting of coax cable, Romex wire, solid wire, stranded wire, and operationally effective combinations thereof.
5 . The antenna electricity harvesting system according to claim 1 further comprising:
earth ground electrical potential applied at circuit node E shown in FIG. 4 a , FIG. 4 b , and FIG. 4 c , and connected to earth via a method selected from the group consisting of burying copper at least partially in earth ground, submerging electrically conductive metal at least partially in earth ground, submerging electrically conductive rod at least partially in earth ground, and attaching to sufficiently effective home wiring or localized wiring.
6 . The galvanic powered integrated circuit system comprising:
at least one integrated circuit,
a first electrode residing in a location selected from the group consisting of above transistor diffusions, below transistor diffusions, and adjacent to said integrated circuit,
a second electrode residing in a location selected from the group consisting of above transistor diffusions, below transistor diffusions, and adjacent to said integrated circuit,
said first electrode and said second electrode possessing exposed surface area for galvanic reaction,
said first electrode surface substantially comprised of a metal selected from the group consisting of copper, tungsten, zinc, aluminum, and other metal useful for substantial galvanic reactions,
said second electrode surface substantially comprised of a metal selected from the group consisting of copper, tungsten, zinc, aluminum, and other metal useful for substantial galvanic reactions,
said first electrode and said second electrode electrically interconnected to said integrated circuit or to substantially relevant circuit nodes within said integrated circuit system in order to process or utilize the electricity produced by galvanic reactions,
said integrated circuit system offering power-up activation capability after at least one of said first or second electrodes is exposed to liquid thereby causing electricity generation for said integrated circuit system near locations selected from the group consisting of a sink basin, a tub basin, plumbing, a washing machine, chemical processing equipment, a boat hull, a basement, in a suitable galvanic battery cell system, and in a suitable antenna electricity harvesting system.
7 . The galvanic powered integrated circuit system according to claim 6 further comprising:
a plurality of supplemental galvanic electrodes,
said supplemental galvanic electrodes possessing form and placement selected from the group consisting of metallic sheeting electrically connected to said first electrode, metallic sheeting electrically connected to said second electrode, spiral shaped metal conductors electrically connected to said first electrode, spiral shaped metal conductors connected to said second electrode, and to at least one electrode in a suitable galvanic battery cell system.
8 . The galvanic powered integrated circuit system according to claim 6 further comprising:
at least two adjacent integrated circuits in spatial orientation selected from the group consisting of substrate to substrate, top bond pad layer to substrate, and top bond pad layer to top bond pad layer.
9 . The galvanic powered integrated circuit system according to claim 6 further comprising:
at least one of said first or second electrodes substantially butted or affixed to a location selected from the group consisting of integrated circuit substrate, integrated circuit top surface, and integrated circuit bottom surface.
10 . The galvanic powered integrated circuit system according to claim 6 further comprising:
integrated circuit transistors selected from the group consisting of Metal Oxide Semiconductor Field Effect Transistors (MOSFET's), Bipolar Junction Transistors (BJT's), Insulated Gate Bipolar Transistors (IGBT's), Junction Field Effect Transistors (JFET's), Fin-shaped Field Effect Transistors (FINFET's), and Carbon Nano-tube Transistors (CNT's).
11 . The galvanic powered integrated circuit system according to claim 6 further comprising:
a plurality of integrated circuits stacked substantially vertically or positioned substantially adjacent horizontally.
12 . The galvanic powered integrated circuit system according to claim 6 further comprising:
at least one of said first or second electrodes possessing substantially perforated or etched surface features selected from the group consisting of slots, squares, circles, and ovals.
13 . The galvanic powered integrated circuit system according to claim 6 further comprising:
said integrated circuit system possessing functional ability to self power-on when in the presence of liquids that activate galvanic reactions.
14 . The galvanic powered integrated circuit system according to claim 6 further comprising:
said integrated circuit system possessing functional ability to activate modal or circuit operations selected from the group consisting of generating substantially periodic electrical oscillations, generating substantially periodic electrical pulse trains, providing directed energy emissions, signaling, conducting sensing operations, conducting imaging operations, and engaging in communications transmissions.
15 . The galvanic powered integrated circuit system according to claim 6 further comprising:
at least two integrated circuits vertically stacked.
16 . An environmentally reactive galvanic integrated circuit stack and system comprising:
at least one transistor substrate,
at least one transistor diffusion in said substrate,
at least one metal layer fabrication featuring substantially unpassivated outwardly disposed surface area for environmental galvanic reaction,
said outwardly disposed surface area functioning as an electrode to source or sink electrical charge when environmentally exposed,
said substrate at least partially electrically insulated or resistant to environmental galvanic reactions.
17 . The environmentally reactive galvanic integrated circuit stack and system according to claim 16 further comprising:
at least two stacked integrated circuits.
18 . The environmentally reactive galvanic integrated circuit stack and system according to claim 16 further comprising:
at least one supplemental electrode suitable for environmental galvanic reaction and connectable to circuit nodes.
19 . The environmentally reactive galvanic integrated circuit stack and system according to claim 16 further comprising:
at least one integrated circuit bond pad substantially electrically insulated from environmental galvanic reaction.
20 . The environmentally reactive galvanic integrated circuit stack and system according to claim 16 further comprising:
at least one electrical load circuit or accessory electronic circuit selected from the group consisting of light emission circuits, ray emitters, lasers, sound emitters, ultra-sound emitters, speakers, receivers, detectors, sensors, oscillators, pulse train generators, spark gaps, excitable gases, gas filled bulbs, integrated circuits, vertically stacked integrated circuits, charging circuits, charge storage circuits, energy conversion circuits, circuit schematic means of FIGS. 3 a , 3 b , 3 c , 3 d , 3 e , 3 f , 3 g , 3 h , 3 i , 4 a , 4 b , 4 c , 4 d , 4 e , 4 f , 4 g , and effective mixtures thereof.