IP Library Granted Patent US 12671446
Granted Patent B2
US 12671446 · App. 18/443,356 · Granted Jun 30, 2026

Radio-frequency module and communication device

Inventors: Reiji Nakajima (Nagaokakyo, JP); Hiroyuki Kani (Nagaokakyo, JP); Morio Takeuchi (Nagaokakyo, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H04B1/0057H04B1/0078H04B1/04H04B2001/0408
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Quick Facts
Patent No.
US 12671446
App. No.
18/443,356
Granted
Jun 30, 2026
Kind
B2
Abstract

A radio-frequency module includes a module substrate having first and second major surfaces, a transmit filter disposed at the module substrate, a duplexer that is disposed at the module substrate and that includes a transmit filter and a receive filter, an antenna switch to selectively couple the transmit filter or the duplexer, and a switch to selectively couple the transmit filter or the transmit filter. The transmit filter has a pass band that includes an uplink operating band of a first band for frequency division duplex. The transmit filter has a pass band that includes the uplink operating band of the first band. The receive filter has a pass band that includes a downlink operating band of the first band. The transmit filter and the receive filter are stacked together and positioned beside the first major surface.

Claims (58)

1 . A radio-frequency module comprising:

a module substrate including a first major surface and a second major surface, the second major surface being opposite to the first major surface;

a first acoustic wave filter disposed at the module substrate;

a duplexer disposed at the module substrate, the duplexer including a second acoustic wave filter and a third acoustic wave filter;

an antenna switch configured to selectively couple the first acoustic wave filter or the duplexer; and

a transmit switch configured to selectively couple the first acoustic wave filter or the second acoustic wave filter, wherein

the first acoustic wave filter includes a pass band that includes an uplink operating band of a first band for frequency division duplex (FDD),

the second acoustic wave filter includes a pass band that includes the uplink operating band of the first band,

the third acoustic wave filter includes a pass band that includes a downlink operating band of the first band, and

the first acoustic wave filter and the third acoustic wave filter are stacked one on top of the other and positioned beside the first major surface.

2 . The radio-frequency module according to claim 1 , further comprising:

a power amplifier coupled to the first acoustic wave filter and the second acoustic wave filter via the transmit switch.

3 . The radio-frequency module according to claim 2 , wherein

in plan view of the first major surface, a distance between the power amplifier and the first acoustic wave filter is longer than a distance between the power amplifier and the second acoustic wave filter.

4 . The radio-frequency module according to claim 1 , further comprising:

a resin member that covers the first acoustic wave filter, the third acoustic wave filter, and the first major surface; and

a shielding film that covers a surface of the resin member, wherein

the first acoustic wave filter is in contact with the shielding film.

5 . The radio-frequency module according to claim 4 , wherein

the third acoustic wave filter is positioned between the module substrate and the first acoustic wave filter, and

the first acoustic wave filter includes a surface and another surface that is opposite to the surface and that faces the third acoustic wave filter, and the surface of the first acoustic wave filter is in contact with the shielding film.

6 . The radio-frequency module according to claim 2 , wherein

the transmit switch includes

a first common terminal coupled to an output end of the power amplifier,

a first selection terminal coupled to an input end of the first acoustic wave filter, and

a second selection terminal coupled to an input end of the second acoustic wave filter,

the antenna switch includes

a second common terminal coupled to an antenna,

a third selection terminal coupled to an output end of the first acoustic wave filter, and

a fourth selection terminal coupled to an output end of the second acoustic wave filter and an input end of the third acoustic wave filter, and

in a case that the first common terminal is connected to the first selection terminal, the second common terminal is connected to the third selection terminal and not to the fourth selection terminal.

7 . The radio-frequency module according to claim 6 , wherein,

in a case that the first common terminal is connected to the second selection terminal, the second common terminal is connected to the fourth selection terminal and not to the third selection terminal.

8 . The radio-frequency module according to claim 1 , wherein

the first acoustic wave filter corresponds to Power Class 2, and

the second acoustic wave filter corresponds to Power Class 3.

9 . The radio-frequency module according to claim 1 , wherein

an electric power handling capability of the first acoustic wave filter is higher than an electric power handling capability of the second acoustic wave filter.

10 . The radio-frequency module according to claim 1 , wherein

a size of the first acoustic wave filter is larger than a size of the second acoustic wave filter.

11 . The radio-frequency module according to claim 1 , wherein

the third acoustic wave filter is positioned between the module substrate and the first acoustic wave filter, and

the third acoustic wave filter is smaller than the first acoustic wave filter in plan view of the first major surface.

12 . The radio-frequency module according to claim 1 , further comprising:

a low-noise amplifier coupled to the third acoustic wave filter.

13 . The radio-frequency module according to claim 1 , wherein

the second acoustic wave filter is disposed at the first major surface, and

the antenna switch and the transmit switch are disposed at the second major surface.

14 . The radio-frequency module according to claim 1 , wherein

the second acoustic wave filter, the antenna switch, and the transmit switch are disposed at the first major surface.

15 . The radio-frequency module according to claim 1 , wherein the module substrate includes a low temperature co-fired ceramic (LTCC) substrate.

16 . The radio-frequency module according to claim 1 , wherein the module substrate includes a high temperature co-fired ceramic (HTCC) substrate.

17 . The radio-frequency module according to claim 1 , wherein the module substrate includes a redistribution layer.

18 . The radio-frequency module according to claim 1 , wherein at least one of the first, second, and third acoustic wave filters include a surface acoustic wave (SAW) filter.

19 . The radio-frequency module according to claim 1 , wherein at least one of the first, second, and third acoustic wave filters includes a bulk acoustic wave (BAW) filter.

20 . A communication device comprising:

the radio-frequency module according to claim 1 ; and

a signal processing circuit configured to process a radio-frequency signal transferred or to be transferred through the radio-frequency module.