Low noise amplifier and ultra-wideband receiver
A low noise amplifier and an ultra-wideband receiver are provided. In the low noise amplifier, a first amplifying unit includes a first common-source amplifier transistor, a second common-source amplifier transistor, a first negative feedback unit, a second negative feedback unit and an inter-stage matching unit. In the inter-stage matching unit the sixth inductor is in connection with a drain of the first common-source amplifier transistor, and the sixth inductor is in connection with the fourth capacitor to form a feedback node, the first transmission line inductor is in suspended connection with the feedback node, and the fourth capacitor is in connection with the gate of the second common-source amplifier transistor, the first negative feedback unit is in cross-connection between the first common-source amplifier transistor and the feedback node, and the second negative feedback unit is in cross-connection between the second common-source amplifier transistor and the feedback node.
1 . A low noise amplifier, at least comprising a first amplifying unit, the first amplifying unit includes a first common-source amplifier transistor, a second common-source amplifier transistor, a first negative feedback unit, a second negative feedback unit and an inter-stage matching unit, the inter-stage matching unit includes a sixth inductor, a first transmission line inductor and a fourth capacitor, one terminal of the sixth inductor is in connection with a drain of the first common-source amplifier transistor, and another terminal of the sixth inductor is in connection with a terminal of the fourth capacitor to form a feedback node, the first transmission line inductor is in suspended connection with the feedback node, and another terminal of the fourth capacitor is in connection with a gate of the second common-source amplifier transistor, the first negative feedback unit is in cross-connection between a gate of the first common-source amplifier transistor and the feedback node, and the second negative feedback unit is in cross-connection between a drain of the second common-source amplifier transistor and a feedback node, a gate of the first common-source amplifier transistor is an input terminal of the first amplifying unit, and a drain of the second common-source amplifier transistor is an output terminal of the first amplifying unit.
2 . The low noise amplifier according to claim 1 , wherein, the first negative feedback unit includes a fifth capacitor and a fourth resistor in series, and the second negative feedback unit includes a fifth resistor and a seventh inductor in series.
3 . The low noise amplifier according to claim 1 , wherein, a source of the first common-source amplifier transistor is in connection with a direct current ground and an alternating current ground simultaneously, and a source of the second common-source amplifier transistor is in connection with a direct current ground and an alternating current ground simultaneously.
4 . The low noise amplifier according to claim 1 , wherein, the first amplifying unit includes a bias network, a power supply terminal supplies power to a drain of the first common-source amplifier transistor and a drain of the second common-source amplifier transistor through the bias network.
5 . The low noise amplifier according to claim 4 , wherein, the bias network is arranged between the power supply terminal and a drain of the second common-source amplifier transistor, and the second negative feedback unit is formed by direct current devices.
6 . The low noise amplifier according to claim 5 , wherein, the bias network includes a ninth inductor, one terminal of the ninth inductor is in connection with the power supply terminal, and another terminal of the ninth inductor is in connection with a drain of the second common-source amplifier transistor.
7 . The low noise amplifier according to claim 1 , wherein, the low noise amplifier further comprises an input matching unit, a second amplifying unit and an output matching unit, an input terminal of the input matching unit is an input terminal of the low noise amplifier, the second amplifying unit is a common-gate amplifier circuit, and an output terminal of the output matching unit is an output terminal of the low noise amplifier;
an output terminal of the input matching unit is in connection with an input terminal of the first amplifying unit, an output terminal of the first amplifying unit is in connection with an input terminal of the second amplifying unit, an output terminal of the second amplifying unit is in connection with an input terminal of the output matching unit; alternatively
an output terminal of the input matching unit is in connection with an input terminal of the second amplifying unit, an output terminal of the second amplifying unit is in connection with an input terminal of the first amplifying unit, an output terminal of the first amplifying unit is in connection with an input terminal of the output matching unit.
8 . The low noise amplifier according to claim 7 , wherein, an output terminal of the input matching unit is in connection with an input terminal of the second amplifying unit, an output terminal of the second amplifying unit is in connection with an input terminal of the first amplifying unit, an output terminal of the first amplifying unit is in connection with an input terminal of the output matching unit, and the second amplifying unit is in matching-connection with the first amplifying unit through an eighth inductor.
9 . The low noise amplifier according to claim 7 , wherein, the input matching unit is an elliptical band-pass filter, and the output matching unit is a band-pass filter.
10 . The low noise amplifier according to claim 9 , wherein, the elliptical band-pass filter includes a second transmission line inductor, a tenth inductor, an eleventh inductor, a sixth capacitor, a seventh capacitor, a twelfth inductor and a thirteenth inductor, an input terminal of the low noise amplifier is in connection with a first terminal of the second transmission line inductor and a first terminal of the tenth inductor, and a second terminal of the second transmission line inductor is suspended, a second terminal of the tenth inductor is in connection with a first terminal of an eleventh inductor and a first terminal of a sixth capacitor, a second terminal of the eleventh inductor is grounded, a second terminal of the sixth capacitor is in connection with a first terminal of the seventh capacitor, a first terminal of the twelfth inductor and a first terminal of the thirteenth inductor, a second terminal of the seventh capacitor and a second terminal of the twelfth inductor are grounded, and a second terminal of the thirteenth inductor is an output terminal of the elliptic band-pass filter.
11 . The low noise amplifier according to claim 1 , wherein, at least one of the sixth inductor, a seventh inductor, an eighth inductor, a tenth inductor, and a thirteenth inductor are transmission line inductors.
12 . The low noise amplifier according to claim 1 , wherein, the second amplifying unit includes an amplification transistor and a grounding unit, a source of the amplification transistor is an input terminal, a drain of the amplification transistor is an output terminal, and a gate of the amplification transistor is grounded through the grounding unit, the grounding unit includes two grounding branches in parallel, one ground branch is formed by a first capacitor, and another ground branch is formed by a second capacitor and a first resistor in series.
13 . The low noise amplifier according to claim 12 , wherein, a feedback unit is arranged between a source of the amplifier transistor and a drain of the amplifier transistor or between a drain of the amplifier transistor and a gate of the amplifier transistor, and the feedback unit is formed by a reactance element and a capacitive element in series.
14 . The low noise amplifier according to claim 12 , wherein, the second amplifying unit further includes a noise reduction unit in cross-connection between a gate of the amplification transistor and a source of the amplification transistor, and the noise reduction unit is formed by a reactance element and a capacitive element in series.
15 . The low noise amplifier according to claim 13 , wherein, the reactance element is one resistor or one inductor or an inductor and a resistor in series, and the capacitive element is a capacitor.
16 . The low noise amplifier according to claim 12 , wherein, the low noise amplifier further comprises a choke unit arranged between a drain of the amplifier transistor and a power supply terminal, and direct current devices are adopted by the choke unit.
17 . The low noise amplifier according to claim 16 , wherein, the choke unit includes a first inductor and a third resistor, and the first inductor is in series connection with a third resistor.
18 . The low noise amplifier according to claim 16 , wherein, the choke unit includes a second inductor, a third inductor and a fourth resistor, and the second inductor is in parallel connection with the fourth resistor, and then in series connection with the third inductor; alternatively,
the choke unit includes a fourth inductor, a fifth inductor and a fifth resistor, and the fourth inductor is in series connection with the fifth resistor, and then in parallel connection with the fifth inductor.
19 . The low noise amplifier according to claim 18 , wherein, the second inductor is coupled to the third inductor, alternatively the fourth inductor is coupled to the fifth inductor.
20 . An ultra-wideband receiver, comprising the low noise amplifier according to claim 1 .