Semiconductor device and method for manufacturing semiconductor device
According to one embodiment, a semiconductor device includes a stacked film with first insulating films and electrode layers alternately stacked in a first direction. The device further includes a columnar portion extending in the first direction and provided in a first region of the stacked film. The columnar portion forms memory cells at its intersections with the electrode layers. The device further includes a support column portion provided in a second region and extending in the first direction. A conductive plug is provided on a first electrode layer among the electrode layers in the second region. A first side surface of the support column portion faces a second side surface of the plug and the second side surface is concave in a direction toward the first side surface.
1 . A semiconductor device, comprising:
a stacked film including a plurality of first insulating films alternately stacked with a plurality of electrode layers in a first direction;
a columnar portion in a first region of the stacked film, the columnar portion extending in the first direction and forming a plurality of memory cells at intersections with the plurality of electrode layers;
a support column portion in a second region of the stacked film and extending in the first direction; and
a plug contacting a first electrode layer among the plurality of electrode layers in the second region, wherein
a first side surface of the support column portion faces a second side surface of the plug, and
the second side surface is concave in a direction toward the first side surface.
2 . The semiconductor device according to claim 1 , wherein
the plug passes through at least one electrode layer in the plurality of electrode layers above the first electrode layer in the first direction, and
the semiconductor device further includes:
a second insulating film between the plug and each of the electrode layers above the first electrode layer.
3 . The semiconductor device according to claim 2 , wherein the second insulating film is between the first side surface and the second side surface.
4 . The semiconductor device according to claim 2 , wherein a position of an upper end of the second insulating film is higher in the first direction than a position of an upper end of the support column portion.
5 . The semiconductor device according to claim 1 , wherein the support column portion is circular in a cross section perpendicular to the first direction above an upper surface of the first electrode layer and also circular below the upper surface of the first electrode layer.
6 . The semiconductor device according to claim 1 , wherein the plug is not in contact with the support column portion.
7 . The semiconductor device according to claim 1 , wherein
the columnar portion includes a first semiconductor layer, and
the support column portion includes a second semiconductor layer.
8 . The semiconductor device according to claim 7 , wherein
the columnar portion further includes a third insulating film surrounding the first semiconductor layer, and
the support column portion further includes a fourth insulating film surrounding the second semiconductor layer.
9 . The semiconductor device according to claim 8 , wherein
the second semiconductor layer and the first semiconductor layer are the same material as one another, and
fourth insulating film and the third insulating film are the same material as one another.
10 . The semiconductor device according to claim 1 , wherein the support column portion consists of only of an insulating material.
11 . The semiconductor device according to claim 1 , wherein the stacked film has a stepped shape in the second region.
12 . A semiconductor device, comprising:
a stacked film including a plurality of first insulating films alternately stacked with a plurality of electrode layers in a first direction;
a columnar portion in a first region of the stacked film, the columnar portion extending in the first direction and forming a plurality of memory cells at intersections with the plurality of electrode layers;
a support column portion provided in a second region of the stacked film and extending in the first direction;
a plug contacting a first electrode layer among the plurality of electrode layers in the second region, the plug passing through at least one electrode layer in the plurality of electrode layers above the first electrode layer in the first direction; and
a second insulating film between the support column portion and the plug and surrounding the plug in a cross section perpendicular to the first direction, wherein
an interface between the support column portion and the second insulating film protrudes in a direction toward the second insulating film in the cross section perpendicular to the first direction or the support column portion is surrounded by the second insulating film in the cross section perpendicular to the first direction.