Resistive memory device and manufacturing method thereof
A resistive memory device includes a dielectric layer, a trench, a first resistive switching element, a diode via structure, and a signal line structure. The trench is disposed in the dielectric layer. The first resistive switching element is disposed in the trench. The first resistive switching element includes a first bottom electrode, a first top electrode disposed above the first bottom electrode, and a first variable resistance layer disposed between the first bottom electrode and the first top electrode. The diode via structure is disposed in the dielectric layer and located under the trench, and the diode via structure is connected with the first bottom electrode. The signal line structure is disposed in the trench, a part of the signal line structure is disposed on the first resistive switching element, and the signal line structure is electrically connected with the first top electrode.
1 . A resistive memory device, comprising:
a dielectric layer;
a trench disposed in the dielectric layer, wherein the trench is elongated in a first horizontal direction;
a first resistive switching element disposed in the trench, wherein the first resistive switching element comprises:
a first bottom electrode;
a first top electrode disposed above the first bottom electrode; and
a first variable resistance layer disposed between the first bottom electrode and the first top electrode;
a diode via structure disposed in the dielectric layer and located under the trench, wherein the diode via structure is connected with the first bottom electrode; and
a signal line structure disposed in the trench, wherein a part of the signal line structure is disposed on the first resistive switching element, and the signal line structure is electrically connected with the first top electrode,
wherein in a cross-sectional view of the resistive memory device, the first variable resistance layer comprises a U-shaped structure surrounding the signal line structure and the first top electrode in a second horizontal direction.
2 . The resistive memory device according to claim 1 , wherein in the cross-sectional view of the resistive memory device, the first top electrode comprises a U-shaped structure surrounding the signal line structure in the second horizontal direction.
3 . The resistive memory device according to claim 1 , wherein in the cross-sectional view of the resistive memory device, the first bottom electrode comprises a U-shaped structure surrounding the signal line structure, the first top electrode, and the first variable resistance layer in the second horizontal direction.
4 . The resistive memory device according to claim 1 , wherein a part of the first resistive switching element is sandwiched between the signal line structure and the dielectric layer in the second horizontal direction.
5 . The resistive memory device according to claim 1 , wherein a top surface of the first top electrode, a top surface of the first variable resistance layer, and a top surface of the first bottom electrode are coplanar.
6 . The resistive memory device according to claim 1 , wherein a top surface of the dielectric layer and a top surface of the first bottom electrode are coplanar.
7 . The resistive memory device according to claim 1 , wherein a top surface of the signal line structure and a top surface of the first top electrode are coplanar.
8 . The resistive memory device according to claim 1 , further comprising:
a second resistive switching element disposed in the trench, wherein the second resistive switching element comprises:
a second bottom electrode;
a second top electrode disposed above the second bottom electrode; and
a second variable resistance layer disposed between the second bottom electrode and the and the second top electrode, wherein another part of the signal line structure is disposed on the second resistive switching element, and the signal line structure is electrically connected with the second top electrode.
9 . The resistive memory device according to claim 1 , further comprising:
a bit line structure disposed in the dielectric layer and located under the diode via structure, wherein the bit line structure is connected with the diode via structure.