Semiconductor device and method
A method includes forming a fin extending from a substrate; forming an first isolation region along opposing sidewalls of the fin; forming a gate structure over the fin; forming an epitaxial source/drain region in the fin adjacent the gate structure; forming an etch stop layer over the epitaxial source/drain region and over the gate structure; forming a protection layer over the etch stop layer, the protection layer including silicon oxynitride; and forming a second isolation material over the protection layer, wherein forming the second isolation material reduces a nitrogen concentration of the protection layer.
1 . A device comprising:
a fin extending from a semiconductor substrate;
a gate stack over and along a sidewall of the fin;
a gate spacer along a sidewall of the gate stack and a sidewall of the fin;
an epitaxial source/drain region in the fin and adjacent the gate stack;
a silicon nitride layer extending over the epitaxial source/drain region and the gate spacer, wherein the silicon nitride layer directly contacts the gate spacer;
a silicon oxynitride layer on the silicon nitride layer, wherein the silicon oxynitride layer is fully separated from the gate spacer by the silicon nitride layer;
an insulating layer on the silicon oxynitride layer; and
a contact extending through the insulating layer, the silicon oxynitride layer, and the silicon nitride layer to the epitaxial source/drain region.
2 . The device of claim 1 , wherein the insulating layer comprises silicon oxide.
3 . The device of claim 1 , wherein the silicon oxynitride layer is thicker than the silicon nitride layer.
4 . The device of claim 1 , wherein the silicon oxynitride layer has a thickness between 1 nm and 3 nm.
5 . The device of claim 1 , wherein the silicon oxynitride layer has an atomic concentration of nitrogen that is between 1% and 20%.
6 . The device of claim 1 , wherein the silicon nitride layer has a thickness between 2 nm and 100 nm.
7 . The device of claim 1 , wherein the insulating layer is free of nitrogen.
8 . The device of claim 1 , wherein the insulating layer is a flowable oxide material.
9 . A semiconductor device comprising:
a fin protruding from a substrate;
a gate structure over the fin;
a spacer on the gate structure;
an epitaxial region in the fin adjacent the spacer;
an etch stop layer directly covering the epitaxial region and the spacer, wherein the etch stop layer has a first atomic concentration of nitrogen;
a protection layer directly covering the etch stop layer, wherein the protection layer has a second atomic concentration of nitrogen that is less than the first atomic concentration of nitrogen, wherein the etch stop layer is between the protection layer and the spacer; and
a first isolation layer covering the protection layer, wherein the first isolation layer has a third atomic concentration of nitrogen that is less than the second atomic concentration of nitrogen, wherein top sides of the etch stop layer, the protection layer, the spacer, and the first isolation layer are coplanar.
10 . The semiconductor device of claim 9 , wherein the third atomic concentration of nitrogen is zero.
11 . The semiconductor device of claim 9 , wherein the second atomic concentration of nitrogen is between 1% and 10%.
12 . The semiconductor device of claim 9 , wherein the protection layer is thicker than the etch stop layer.
13 . The semiconductor device of claim 9 , wherein the protection layer is a different material than the etch stop layer.
14 . The semiconductor device of claim 9 further comprising a second isolation layer over and physically contacting the etch stop layer, the protection layer, and the first isolation layer.
15 . The semiconductor device of claim 9 , wherein the protection layer has a thickness between 1 nm and 3 nm.
16 . A device comprising:
a semiconductor fin protruding from a substrate;
a gate stack over the semiconductor fin;
a source/drain region on the semiconductor fin adjacent the gate stack;
a first dielectric layer extending over the source/drain region and on the gate stack, wherein the first dielectric layer comprises nitrogen and has a first thickness;
a second dielectric layer extending over the first dielectric layer, wherein the second dielectric layer comprises oxygen and has a second thickness that is greater than the first thickness;
a third dielectric layer sandwiched between the first dielectric layer and the second dielectric layer, wherein the third dielectric layer comprises nitrogen and oxygen, wherein a first region of the third dielectric layer adjacent the first dielectric layer has a greater concentration of nitrogen than a second region of the third dielectric layer that is farther from the first dielectric layer than the first region, wherein the third dielectric layer has a third thickness that is between the first thickness and the second thickness; and
a conductive feature penetrating the first dielectric layer, the second dielectric layer, and the third dielectric layer to contact the source/drain region.
17 . The device of claim 16 , wherein the third thickness is between 2 nm and 100 nm.
18 . The device of claim 16 , wherein the first dielectric layer comprises carbon.
19 . The device of claim 16 , wherein the third dielectric layer comprises carbon.
20 . The device of claim 16 , wherein the first dielectric layer is free of oxygen.