Integrated circuit structures with gate volume reduction
Integrated circuit structures having gate volume reduction, and methods of fabricating integrated circuit structures having gate volume reduction, are described. For example, an integrated circuit structure includes a sub-fin structure beneath a stack of nanowires, the stack of nanowires having a first side and a second side. A dielectric backbone structure is along the first side of the stack of nanowires. The dielectric backbone structure has a bottom above a bottom of the sub-fin. A gate electrode is over the stack of nanowires and is along the second side of the stack of nanowires. A gate dielectric structure is between the gate electrode and the stack of nanowires.
1 . An integrated circuit structure, comprising:
a sub-fin structure beneath a stack of nanowires, the stack of nanowires having a first side and a second side;
a dielectric backbone structure along the first side of the stack of nanowires, the dielectric backbone structure having a bottom above a bottom of the sub-fin;
a gate electrode over the stack of nanowires and along the second side of the stack of nanowires; and
a gate dielectric structure between the gate electrode and the stack of nanowires, wherein a portion of the gate dielectric structure is laterally intervening between and in contact with the first side of the stack of nanowires and the dielectric backbone structure.
2 . The integrated circuit structure of claim 1 , wherein the bottom of the dielectric backbone structure is on a portion of the gate dielectric structure.
3 . The integrated circuit structure of claim 1 , wherein the dielectric backbone structure comprises a low-k dielectric material.
4 . The integrated circuit structure of claim 1 , wherein the sub-fin structure is a semiconductor sub-fin structure.
5 . The integrated circuit structure of claim 1 , wherein the sub-fin structure is an insulator sub-fin structure.
6 . An integrated circuit structure, comprising:
a sub-fin structure beneath a fin, the fin having a first side and a second side;
a dielectric backbone structure along the first side of the fin, the dielectric backbone structure having a bottom above a bottom of the sub-fin;
a gate electrode over the fin and along the second side of the fin; and
a gate dielectric structure between the gate electrode and the fin, wherein a portion of the gate dielectric structure is laterally intervening between and in contact with the first side of the fin and the dielectric backbone structure.
7 . The integrated circuit structure of claim 6 , wherein the bottom of the dielectric backbone structure is on a portion of the gate dielectric structure.
8 . The integrated circuit structure of claim 6 , wherein the dielectric backbone structure comprises a low-k dielectric material.
9 . The integrated circuit structure of claim 6 , wherein the sub-fin structure is a semiconductor sub-fin structure.
10 . The integrated circuit structure of claim 6 , wherein the sub-fin structure is an insulator sub-fin structure.
11 . A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a sub-fin structure beneath a stack of nanowires, the stack of nanowires having a first side and a second side;
a dielectric backbone structure along the first side of the stack of nanowires, the dielectric backbone structure having a bottom above a bottom of the sub-fin;
a gate electrode over the stack of nanowires and along the second side of the stack of nanowires; and
a gate dielectric structure between the gate electrode and the stack of nanowires, wherein a portion of the gate dielectric structure is laterally intervening between and in contact with the first side of the stack of nanowires and the dielectric backbone structure.
12 . The computing device of claim 11 , further comprising:
a memory coupled to the board.
13 . The computing device of claim 11 , further comprising:
a communication chip coupled to the board.
14 . The computing device of claim 11 , wherein the component is a packaged integrated circuit die.
15 . The computing device of claim 11 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
16 . A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a sub-fin structure beneath a fin, the fin having a first side and a second side;
a dielectric backbone structure along the first side of the fin, the dielectric backbone structure having a bottom above a bottom of the sub-fin;
a gate electrode over the fin and along the second side of the fin; and
a gate dielectric structure between the gate electrode and the fin, wherein a portion of the gate dielectric structure is laterally intervening between and in contact with the first side of the fin and the dielectric backbone structure.
17 . The computing device of claim 16 , further comprising:
a memory coupled to the board.
18 . The computing device of claim 16 , further comprising:
a communication chip coupled to the board.
19 . The computing device of claim 16 , wherein the component is a packaged integrated circuit die.
20 . The computing device of claim 16 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.