Complex of heterogeneous two-dimensional materials and method of manufacturing the same
Provided are a complex of heterogeneous two-dimensional materials and a method of manufacturing the same. The complex of heterogeneous two-dimensional materials may include a substrate; a first two-dimensional material layer on the substrate and having a two-dimensional crystal structure; and a second two-dimensional material layer between the substrate and the first two-dimensional material layer. The second two-dimensional material layer have a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded to each other.
1 . A complex of heterogeneous two-dimensional materials, the complex comprising:
a substrate;
a first two-dimensional material layer having a two-dimensional crystal structure on the substrate;
a second two-dimensional material layer having a two-dimensional crystal structure between the substrate and the first two-dimensional material layer, the two-dimensional crystal structure of the second two-dimensional material layer including a plurality of phosphorus atoms covalently bonded to each other; and
a phosphorus precursor film surrounding the second two-dimensional material layer in a direction parallel to an upper surface of the substrate, wherein the first two-dimensional material layer covers the phosphorus precursor film and a structure of the phosphorus precursor film is different than the two-dimensional crystal structure of the second two-dimensional material layer.
2 . The complex of claim 1 , wherein the first two-dimensional material layer includes graphene, hexagonal-boron nitride (h-BN), or transition metal dichalcogenide (TMD),
the substrate is a semiconductor material and the second two-dimensional material layer directly contacts the substrate.
3 . The complex of claim 1 , wherein the second two-dimensional material layer includes violet phosphorus.
4 . The complex of claim 3 , wherein the second two-dimensional material layer further includes black phosphorus.
5 . The complex of claim 1 , wherein
the second two-dimensional material layer is in a partial region between the substrate and the first two-dimensional material layer.
6 . The complex of claim 5 , wherein
the phosphorus precursor film includes white phosphorus, red phosphorus, phosphorus triiodide (PI 3 ), or phosphorus trichloride (PCl 3 ).
7 . A method of manufacturing a complex of heterogeneous two-dimensional materials, the method comprising:
forming a phosphorus precursor film on a substrate;
forming a first two-dimensional material layer having a two-dimensional crystal structure on the phosphorus precursor film; and
forming a second two-dimensional material layer having a two-dimensional crystal structure on the substrate, the two-dimensional crystal structure of the second two-dimensional material layer including a plurality of phosphorus atoms covalently bonded to each other and being formed by locally irradiating a laser beam onto a region of the phosphorus precursor film, wherein
the second two-dimensional material layer is formed in the region of the phosphorus precursor film,
after the second two-dimensional material layer is formed, the phosphorus precursor film surrounds the second two-dimensional material layer in a direction parallel to an upper surface of the substrate, the first two-dimensional material layer covers the phosphorus precursor film, and a structure of the phosphorus precursor film is different than the two-dimensional crystal structure of the second two-dimensional material layer.
8 . The method of claim 7 , wherein the phosphorus precursor film includes white phosphorus, red phosphorus, phosphorus triiodide (PI 3 ), or phosphorus trichloride (PCl 3 ).
9 . The method of claim 7 , wherein
the forming the second two-dimensional material layer includes irradiating a region of the phosphorus precursor film using the laser beam during the locally irradiating the laser beam onto the phosphorus precursor film, and
the region of the phosphorus precursor film is heated to a temperature of about 400° C. to about 1,000° C. by the irradiating the region of the phosphorus precursor film using the laser beam.
10 . The method of claim 9 , wherein
during the forming the second two-dimensional material layer, the region of the phosphorus precursor film is heated to a temperature of about 500° C. to about 700° C. by the irradiating the region of the phosphorus precursor film using the laser beam.
11 . The method of claim 9 , wherein
during the forming the second two-dimensional material layer, the irradiating the region of the phosphorus precursor film using the laser beam is performed at atmospheric pressure.
12 . The method of claim 7 , wherein the second two-dimensional material layer includes at least one of violet phosphorus and black phosphorus.
13 . The method of claim 7 , further comprising:
performing a heat treatment process on the second two-dimensional material layer and the phosphorus precursor film.
14 . The method of claim 13 , wherein the phosphorus precursor film is removed by the heat treatment process.
15 . The method of claim 14 , wherein
after the performing the heat treatment process, the first two-dimensional material layer is bonded to the substrate by van der Waals force at a region of the substrate from which the phosphorus precursor film is removed.
16 . An electronic device comprising:
a substrate;
a first two-dimensional material layer having a two-dimensional crystal structure on the substrate;
a second two-dimensional material layer having a two-dimensional crystal structure between the substrate and the first two-dimensional material layer, the two-dimensional crystal structure of the second two-dimensional material layer including a plurality of phosphorus atoms covalently bonded to each other;
a first electrode on a first side of the second two-dimensional material layer;
a second electrode on a second side of the second two-dimensional material layer; and
a third electrode on the first two-dimensional material layer, wherein
a portion of the first two-dimensional material layer extends between the second two-dimensional material layer and an entire lower surface of the first electrode,
wherein the first electrode and the second electrode form planar contacts, respectively, with a first end of the first two-dimensional material layer and a second end of the first two-dimensional material layer, and
wherein the first two-dimensional material layer includes graphene and fluorinated graphene, the graphene of the first two-dimensional material layer forms planar contacts with the first electrode and the second electrode, respectively, and
the fluorinated graphene is between the first electrode and the second electrode.
17 . The electronic device of claim 16 , further comprising:
an insulating layer between the first two-dimensional material layer and the third electrode.