Metal-oxide-semiconductor field-effect transistor structure with low leakage current and reserved gate length
View Patent ↗A metal-oxide-semiconductor field-effect transistor (MOSFET) structure includes a semiconductor substrate, a gate structure, a channel region, a trench, an isolation region, a first conductive region, and a P-N junction. The semiconductor substrate has a semiconductor surface. The gate structure is above the semiconductor surface. The channel region is under the gate structure. The trench is formed below the semiconductor surface and adjacent to the channel region. The isolation region is in the trench. The first conductive region has a first doping type, and the first conductive region is positioned on the isolating layer and electrically coupled to the channel region. The P-N junction extends upward from the isolation region and along an edge of the first conductive region.
1 . A MOSFET (metal-oxide-semiconductor field-effect transistor) structure, comprising:
a semiconductor substrate with a semiconductor surface;
a gate structure above the semiconductor surface;
a channel region being under the gate structure;
a trench formed below the semiconductor surface and adjacent to the channel region;
an isolation region in the trench;
a first conductive region with a first doping type, the first conductive region being positioned on the isolating layer and electrically coupled to the channel region;
a P-N junction extending upward from the isolation region and along an edge of the first conductive region; and
a vertical screening layer contacting with the first conductive region, wherein a doping type of the vertical screening layer is different from the first doping type of the first conductive region.
2 . The MOSFET structure in claim 1 , wherein a doping type of the vertical screening layer is the same as that of the semiconductor substrate.
3 . The MOSFET structure in claim 2 , wherein both the first conductive region and the vertical screening layer comprise epitaxial layer, and the P-N junction is between the first conductive region and the vertical screening layer.
4 . The MOSFET structure in claim 3 , wherein the MOSFET structure is a planar n-type metal-oxide-semiconductor (NMOS) transistor, the vertical screening layer is a p-type vertical screening layer, the first conductive region comprises an n-type lightly doped drain (LDD) region contacting with the p-type vertical screening layer and an n-type heavily doped region contacting with the n-type lightly doped drain (LDD) region.
5 . The MOSFET structure in claim 4 , wherein the doping concentration of the vertical screening layer is the same or substantially the same as that of the channel region.
6 . The MOSFET structure in claim 4 , wherein an edge of the n-type lightly doped drain (LDD) region is aligned or substantially aligned with an edge of the gate structure.
7 . The MOSFET structure in claim 4 , wherein the first conductive region comprises a metal containing region, and the metal containing region is positioned in the trench and abuts against the n-type heavily doped region.
8 . A MOSFET (metal-oxide-semiconductor field-effect transistor) structure, comprising:
a semiconductor substrate with a semiconductor surface;
a gate structure above the semiconductor surface;
a channel region being under the gate structure;
a trench formed below the semiconductor surface and adjacent to the channel region;
an isolation region in the trench, wherein the isolation region comprises:
a vertical oxide layer covering a sidewall of the trench and a horizontal oxide layer covering a bottom wall of the trench; and
an insulation plug in the trench and on the horizontal oxide layer;
a first conductive region with a first doping type, the first conductive region being positioned on the isolating layer and electrically coupled to the channel region; and
a P-N junction extending upward from the isolation region and along an edge of the first conductive region.
9 . The MOSFET structure in claim 8 , wherein an edge of the vertical oxide layer is underneath the gate structure, and a distance between the edge of the vertical oxide layer and an edge of the gate structure is 1/10˜¼ of a length of the gate structure.
10 . The MOSFET structure in claim 8 , further comprising a shallow trench isolation region surrounding sidewalls of the first conductive region, and a bottom wall of the first conductive region is isolated from the semiconductor substrate by the isolation region.
11 . A MOSFET structure, comprising:
a semiconductor substrate with a semiconductor surface;
a first trench and a second trench formed below the semiconductor surface;
a first isolation region in the first trench and a second isolation region in the second trench;
a gate structure above the semiconductor surface, the gate structure comprising a gate isolation layer above the semiconductor surface, and a gate conductive layer above the gate isolation layer;
a channel region being under the gate structure;
a drain region with a first doping type on the first isolation region;
a source region with the first doping type on the second isolation region; and
a first vertical screening layer contacting with the drain region, wherein a doping type of the first vertical screening layer is different from the first doping type of the drain region;
wherein a distance between an edge of the first isolation region and an edge of the second isolation region is smaller than a length of the gate structure.
12 . The MOSFET structure in claim 11 , wherein the distance between the edge of the first isolation region and the edge of the second isolation region is ½˜⅘ of the length of the gate structure.
13 . The MOSFET structure in claim 11 , wherein a doping type of the vertical screening layer is the same as that of the semiconductor substrate.
14 . The MOSFET structure in claim 13 , wherein the doping concentration of the first vertical screening layer is the same or substantially the same as that of the channel region.
15 . The MOSFET structure in claim 13 , wherein a P-N junction is between the first vertical screening layer and the drain region, and the P-N junction extends upward from the first isolation region, and is aligned or substantially aligned with an edge of the gate structure.
16 . The MOSFET structure in claim 13 , wherein the channel region, the first vertical screening layer and the drain region comprise epitaxial layer.
17 . A MOSFET structure surrounded by a shallow trench isolation region, comprising:
a semiconductor substrate with a semiconductor surface;
a first trench and a second trench formed below the semiconductor surface;
a first isolation region in the first trench and a second isolation region in the second trench;
a gate structure above the semiconductor surface;
a channel region under the gate structure;
a drain region with a first doping type on the first isolation region;
a source region with the first doping type on the second isolation region; and
a first vertical screening layer between the drain region and the channel region, wherein a doping type of the first vertical screening layer is different from the first doping type of the drain region, and the first vertical screening layer and the drain region comprise epitaxial layer.
18 . The MOSFET structure in claim 17 , wherein a horizontal thickness of the first vertical screening layer is 2˜5 nm.
19 . The MOSFET structure in claim 17 , wherein three sidewalls of the drain region is isolated from the semiconductor substrate by the shallow trench isolation region, and a bottom wall of the first conductive region is isolated from the semiconductor substrate by the first isolation region.
20 . The MOSFET structure in claim 17 , wherein the planar MOSFET structure is formed by a technology node 2 , and a length of the gate structure is between 1.2λ˜2.4λ when λ is between 12 nm˜30 nm.