IP Library › Granted Patent US 12672323
Granted Patent B2
US 12672323 · App. 18/025,957 · Granted Jun 30, 2026

Semiconductor device including an organic film covering a projecting structure

Inventor: Yuki Nakano (Kyoto, JP)
Assignee: ROHM CO., LTD.
H10D62/117H10W74/147H10D8/60H10D30/668H10D62/8325H10W74/43H10W74/47H10W74/481
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Quick Facts
Patent No.
US 12672323
App. No.
18/025,957
Granted
Jun 30, 2026
Kind
B2
Abstract

A semiconductor device includes a chip which has a first main surface on one side and a second main surface on the other side and which includes an active surface set at an inner portion of the first main surface and an outside surface set at a peripheral edge portion of the first main surface, a functional device which is formed at the active surface side, a projecting structure which includes an inorganic substance and projects at the outside surface side, and an organic film which covers the projecting structure.

Claims (49)

1 . A semiconductor device comprising:

a chip which has a first main surface on one side and a second main surface on the other side and which includes an active surface set at an inner portion of the first main surface and an outside surface set at a peripheral edge portion of the first main surface;

a functional device which is formed at the active surface side;

a projecting structure which includes an inorganic substance and projects at the outside surface side;

an inorganic film which is constituted of an inorganic insulator and covers the projecting structure so as to form a part of the projecting structure and has at least one opening which selectively exposes a top surface of the projecting structure; and

an organic film which covers the projecting structure and the inorganic film.

2 . The semiconductor device according to claim 1 ,

wherein the projecting structure is formed in an electrically floating state.

3 . The semiconductor device according to claim 1 ,

wherein a nitride film is not interposed between the projecting structure and the organic film.

4 . The semiconductor device according to claim 1 ,

wherein a nitride film is not interposed between the outside surface and the organic film.

5 . The semiconductor device according to claim 1 ,

wherein the projecting structure does not have a nitride film.

6 . The semiconductor device according to claim 1 ,

wherein the projecting structure is constituted of an inorganic substance.

7 . The semiconductor device according to claim 1 ,

wherein a metal film is not formed in a region between a peripheral edge of the chip and the projecting structure in plan view.

8 . The semiconductor device according to claim 1 ,

wherein the projecting structure is formed at intervals from a peripheral edge of the chip and the active surface in plan view.

9 . The semiconductor device according to claim 1 ,

wherein the projecting structure has a first side at the active surface side and a second side at the peripheral edge side of the chip, and

the organic film covers the projecting structure such as to cover both of the first side and the second side in plan view.

10 . The semiconductor device according to claim 1 ,

wherein the organic film covers an entire region of the projecting structure in plan view.

11 . The semiconductor device according to claim 1 ,

wherein the projecting structure is formed in a band shape extending along the active surface in plan view.

12 . The semiconductor device according to claim 1 ,

wherein the projecting structure surrounds the active surface in plan view.

13 . The semiconductor device according to claim 12 ,

wherein the projecting structure is formed in an endless annular shape in which surrounds the active surface plan view.

14 . The semiconductor device according to claim 1 ,

wherein the organic film covers a portion of the active surface in plan view.

15 . The semiconductor device according to claim 1 , further comprising:

a main surface electrode that covers the active surface in plan view;

wherein the organic film covers a portion of the main surface electrode.

16 . The semiconductor device according to claim 15 ,

wherein a nitride film is not interposed between the main surface electrode and the organic film.

17 . The semiconductor device according to claim 1 ,

wherein the first main surface includes the active surface, the outside surface which is depressed to the second main surface side with respect to the active surface, and a connecting surface which connects the active surface and the outside surface, and has a mesa which is demarcated by the active surface, the outside surface and the connecting surfaces, and

the projecting structure faces the mesa in a plane direction of the outside surface.

18 . The semiconductor device according to claim 1 ,

wherein the projecting structure includes at least one of a polysilicon and a silicon oxide.

19 . The semiconductor device according to claim 1 ,

wherein the functional device includes a Schottky barrier diode that is formed in the active surface.

20 . The semiconductor device according to claim 1 ,

wherein the functional device includes an insulated gate type transistor that is formed in the active surface.

21 . The semiconductor device according to claim 1 ,

wherein the organic film includes a portion which covers the top surface of the projecting structure inside the at least one opening of the inorganic film.