Solar cell, manufacturing method, and photovoltaic module

1 . A solar cell, wherein the solar cell comprises:

a silicon substrate having a first surface and a second surface, wherein the first surface is arranged opposite to the second surface;

a first transport layer arranged on at least one of the first surface and the second surface, wherein the first transport layer comprises a polysilicon layer, wherein

the polysilicon layer of the first transport layer has an amorphous silicon region of the first transport layer, wherein the amorphous silicon region of the first transport layer is arranged on at least a part of a surface that is of the polysilicon layer of the first transport layer and that is away from the silicon substrate; and

a carrier collection layer arranged on the first transport layer, wherein at least a part of the carrier collection layer is in contact with the amorphous silicon region of the first transport layer.

2 . The solar cell according to claim 1 , wherein the solar cell further comprises a second transport layer,

wherein the first transport layer and the second transport layer are separately arranged on the first surface of the silicon substrate, and the first transport layer and the second transport layer are arranged spaced from each other.

3 . The solar cell according to claim 2 , wherein the carrier collection layer further comprises a transparent conductive layer, and the transparent conductive layer is at least connected to:

a part of the surface that is of the polysilicon layer and that is away from the silicon substrate;

a part of a surface of the amorphous silicon region and that is away from the silicon substrate; and

a part of a surface of the second transport layer and that is away from the silicon substrate.

4 . The solar cell according to claim 2 , wherein an end portion that is of the first transport layer and that is close to the second transport layer and an end portion that is of the second transport layer and that is close to the first transport layer are laminated to form a laminated portion, wherein the end portion of the first transport layer is arranged between the end portion of the second transport layer and the first surface, and

wherein the carrier collection layer further comprises a transparent conductive layer, wherein the transparent conductive layer is at least connected to:

a part of a surface that is of the first transport layer and that is away from the silicon substrate, and

a part of a surface that is of the second transport layer and that is away from the silicon substrate,

wherein the transparent conductive layer has an opening configured to break electrical connection between the first transport layer and the second transport layer.

5 . The solar cell according to claim 2 , wherein the first transport layer and the second transport layer are spaced apart by an isolating region, and

wherein the carrier collection layer further comprises a transparent conductive layer, wherein the transparent conductive layer is at least connected to:

a part of a surface that is of the first transport layer and that is away from the silicon substrate; and

at least connected to a part of a surface that is of the second transport layer and that is away from the silicon substrate,

wherein the transparent conductive layer has an opening configured to break electrical connection between the first transport layer and the second transport layer.

6 . The solar cell according to claim 2 , wherein an end portion that is of the first transport layer and that is close to the second transport layer and an end portion that is of the second transport layer and that is close to the first transport layer are laminated to form a laminated portion, wherein the end portion of the first transport layer is arranged between the end portion of the second transport layer and the first surface,

wherein the second transport layer comprises a laminated layer of an intrinsic amorphous silicon region and a doped amorphous silicon region, and

wherein the doped amorphous silicon region covering the end portion of the first transport layer has a hole structure.

7 . The solar cell according to claim 6 , wherein a width of the doped amorphous silicon region having the hole structure ranges from 0.1 μm to 20 μm, wherein the width is measured in an extension direction of the first surface of the silicon substrate.

8 . The solar cell according to claim 6 , wherein a shape of the hole structure is at least one of a circle, an ellipse, or an irregular pattern from a top view of the solar cell.

9 . The solar cell according to claim 1 , wherein the solar cell further comprises a second transport layer,

wherein the first transport layer is arranged on the first surface of the silicon substrate, and the second transport layer is arranged on the second surface of the silicon substrate.

10 . The solar cell according to claim 1 , wherein a thickness of the amorphous silicon region ranges from 3% to 30% of a thickness of the polysilicon layer in a thickness direction of the solar cell.

11 . The solar cell according to claim 1 , wherein a thickness of the amorphous silicon region ranges from 2 nm to 30 nm in a thickness direction of the solar cell.

12 . The solar cell according to claim 1 , wherein in a unit region in which the carrier collection layer is in direct contact with the first transport layer, an area of the amorphous silicon region ranges from 10% to 90% of an area of the polysilicon layer, wherein areas are measured in a direction perpendicular to a thickness direction of the solar cell.

13 . The solar cell according to claim 1 , wherein an etching region is arranged on the surface that is of the polysilicon layer of the first transport layer and that is away from the silicon substrate, wherein the amorphous silicon region is arranged on the etching region.

14 . The solar cell according to claim 1 , wherein the amorphous silicon region comprises a first doping element and/or a second doping element, the polysilicon layer comprises the first doping element, wherein a doping concentration in the amorphous silicon region is greater than a doping concentration in the polysilicon layer.

15 . The solar cell according to claim 14 , wherein the doping concentration in the amorphous silicon region ranges from 3×10 19 atom quantity/cm 3 to 7×10 19 atom quantity/cm 3 .

16 . The solar cell according to claim 1 , wherein particles are arranged on the amorphous silicon region.

17 . The solar cell according to claim 1 , wherein the solar cell further comprises a second transport layer, wherein the second transport layer comprises a polysilicon layer,

wherein the polysilicon layer of the second transport layer has an amorphous silicon region of the second transport layer, wherein the amorphous silicon region of the second transport layer is arranged on at least a part of a surface that is of the polysilicon layer of the second transport layer and that is away from the silicon substrate, and

wherein a first portion of the carrier collection layer is arranged on the first transport layer and a second portion of the carrier collection layer is arranged on the second transport layer, wherein at least a part of the carrier collection layer is in contact with the amorphous silicon region of the second transport layer.

18 . The solar cell according to claim 1 , wherein the carrier collection layer is a laminated combination of a transparent conductive layer and a metal electrode layer, wherein the transparent conductive layer is closer to the silicon substrate than the metal electrode layer, wherein a projection of the transparent conductive layer on a surface of the silicon substrate covers an entire amorphous silicon region of the first transport layer, and wherein a projection of the metal electrode layer on the surface of the silicon substrate at least covers a part of the amorphous silicon region of the first transport layer in a thickness direction of the solar cell; or

wherein the carrier collection layer is a metal electrode layer, wherein a projection of the metal electrode layer on a surface of the silicon substrate covers the entire amorphous silicon region of the first transport layer in a thickness direction of the solar cell.

19 . A manufacturing method for a solar cell, wherein the manufacturing method comprises:

providing a silicon substrate, wherein the silicon substrate has a first surface and a second surface, wherein the first surface is arranged opposite to the second surface;

forming a first transport layer on at least one of the first surface and the second surface, wherein the first transport layer comprises a polysilicon layer;

forming an amorphous silicon region of the first transport layer by performing laser treatment on at least a part of a surface that is of the polysilicon layer of the first transport layer and that is away from the silicon substrate; and

forming a carrier collection layer on the first transport layer, wherein at least a part of the carrier collection layer is in contact with the amorphous silicon region of the first transport layer.

20 . A photovoltaic module, wherein the photovoltaic module comprises a cover plate, a back sheet, and a solar cell arranged between the cover plate and the back sheet, wherein the solar cell comprises:

a silicon substrate having a first surface and a second surface, wherein the first surface is arranged opposite to the second surface;

a first transport layer arranged on at least one of the first surface and the second surface, wherein the first transport layer comprises a polysilicon layer, wherein the polysilicon layer of the first transport layer has an amorphous silicon region of the first transport layer, wherein the amorphous silicon region of the first transport layer is arranged on at least a part of a surface that is of the polysilicon layer of the first transport layer and that is away from the silicon substrate; and

a carrier collection layer arranged on the first transport layer, wherein at least a part of the carrier collection layer is in contact with the amorphous silicon region of the first transport layer.