Solid-state imaging element and electronic equipment

1 . A solid-state imaging element, comprising:

a plurality of light receiving pixels arrayed in a matrix on an inside of a semiconductor layer, wherein

the light receiving pixel includes:

a pair of photoelectric conversion units disposed adjacent to one another and including a shared floating diffusion;

a first separation region disposed to surround the pair of photoelectric conversion units; and

a second separation region disposed between the pair of photoelectric conversion units,

wherein the first separation region has a rectangular shape in a plan view and is provided to extend from a surface on an opposite side to a light incident surface of the semiconductor layer toward the light incident surface,

wherein the second separation region is disposed along a diagonal line of the first separation region having a rectangular shape in the plan view and is provided to extend from the surface on the opposite side to the light incident surface of the semiconductor layer toward the light incident surface, and

wherein the first separation region and the second separation region are not in contact with each other in the plan view.

2 . The solid-state imaging element according to claim 1 , further comprising:

a pixel transistor provided on the surface on the opposite side to the light incident surface of the semiconductor layer,

wherein the pixel transistor is disposed at one corner close to an end of the second separation region among four corners of the first separation region having the rectangular shape in the plan view, and

wherein the floating diffusion is disposed at another corner close to the end of the second separation region among the four corners of the first separation region having the rectangular shape in the plan view.

3 . The solid-state imaging element according to claim 1 , further comprising pixel transistors provided on the surface on the opposite side to the light incident surface of the semiconductor layer, wherein

the pixel transistors are disposed at two corners close to an end portion of the second separation region among four corners of the first separation region having the rectangular shape in the plan view, and

the floating diffusion is disposed at two corners that are not close to the end portion of the second separation region among the four corners of the first separation region having the rectangular shape in the plan view.

4 . The solid-state imaging element according to claim 2 , wherein

an active region of the pixel transistor has a substantially L-shape in the plan view.

5 . The solid-state imaging element according to claim 4 , wherein

a combination of an amplification transistor and a selection transistor or a combination of a reset transistor and a switching transistor among the pixel transistor is disposed in a singularity of the active region.

6 . The solid-state imaging element according to claim 2 , wherein

the pixel transistor partially overlaps the second separation region in the plan view.

7 . The solid-state imaging element according to claim 1 , wherein

the light receiving pixel further includes a contact region provided on the surface on the opposite side to the light incident surface of the semiconductor layer and electrically connected to a reference potential line, and

the contact region partially overlaps the second separation region in the plan view.

8 . The solid-state imaging element according to claim 1 , further comprising a light receiving pixel group including a plurality of the light receiving pixels, wherein

the plurality of the light receiving pixels included in the light receiving pixel group have the second separation region facing different directions in the plan view.

9 . The solid-state imaging element according to claim 1 , further comprising a transfer transistor that transfers a charge accumulated in the photoelectric conversion unit to the floating diffusion, wherein

a gate of the transfer transistor partially overlaps the second separation region in the plan view.

10 . Electronic equipment, comprising:

a solid-state imaging element;

an optical system that captures incident light from a subject and forms an image on an imaging surface of the solid-state imaging element; and

a signal processing circuit configured to perform processing on an output signal from the solid-state imaging element,

wherein the solid-state imaging element includes a plurality of light receiving pixels arrayed in a matrix on an inside of a semiconductor layer,

wherein each light receiving pixel in the plurality of light receiving pixels includes:

a pair of photoelectric conversion units disposed adjacent to each other and including a shared floating diffusion;

a first separation region disposed to surround the pair of photoelectric conversion units;

a second separation region disposed between the pair of photoelectric conversion units,

wherein the first separation region has a rectangular shape in a plan view and is provided to extend from a surface on an opposite side to a light incident surface of the semiconductor layer toward the light incident surface,

wherein the second separation region is disposed along a diagonal line of the first separation region having the rectangular shape in the plan view and is provided to extend from the surface on the opposite side to the light incident surface of the semiconductor layer toward the light incident surface, and

wherein the first separation region and the second separation region are not in contact with each other in the plan view.

11 . The electronic equipment according to claim 10 , further comprising:

a pixel transistor provided on the surface on the opposite side to the light incident surface of the semiconductor layer,

wherein the pixel transistor is disposed at one corner close to an end of the second separation region among four corners of the first separation region having the rectangular shape in the plan view, and

wherein the floating diffusion is disposed at another corner close to the end of the second separation region among the four corners of the first separation region having the rectangular shape in the plan view.

12 . The electronic equipment according to claim 10 , further comprising pixel transistors provided on the surface on the opposite side to the light incident surface of the semiconductor layer, wherein

the pixel transistors are disposed at two corners close to an end portion of the second separation region among four corners of the first separation region having the rectangular shape in the plan view, and

the floating diffusion is disposed at two corners that are not close to the end portion of the second separation region among the four corners of the first separation region having the rectangular shape in the plan view.

13 . The electronic equipment according to claim 11 , wherein

an active region of the pixel transistor has a substantially L-shape in the plan view.

14 . The electronic equipment according to claim 13 , wherein

a combination of an amplification transistor and a selection transistor or a combination of a reset transistor and a switching transistor among the pixel transistor is disposed in a singularity of the active region.

15 . The electronic equipment according to claim 11 , wherein

the pixel transistor partially overlaps the second separation region in the plan view.

16 . The electronic equipment according to claim 10 , wherein

the light receiving pixel further includes a contact region provided on the surface on the opposite side to the light incident surface of the semiconductor layer and electrically connected to a reference potential line, and

the contact region partially overlaps the second separation region in the plan view.

17 . The electronic equipment according to to claim 10 , further comprising a light receiving pixel group including a plurality of the light receiving pixels, wherein

the plurality of the light receiving pixels included in the light receiving pixel group have the second separation region facing different directions in the plan view.