Image sensor and manufacturing method thereof
An image sensor includes a substrate, a global shutter component, a ground doped region, and a light-shielding layer. The substrate at least has a pixel array region and a border region adjacent to each other. The global shutter component is located on the pixel array region, and the global shutter component includes a storage node. The ground doped region is located on the border region. The light-shielding layer is located on the pixel array region and the border region and is electrically connected to the ground doped region. The light-shielding layer includes a first light-shielding layer and a second light-shielding layer. The first light-shielding layer is located on the pixel array region and covers the storage node, and the second light-shielding layer is located on the border region and surrounds the global shutter component. A manufacturing method of an image sensor is also provided.
1 . An image sensor, comprising:
a substrate at least having a pixel array region and a border region adjacent to each other;
a global shutter component located on the pixel array region, wherein the global shutter component comprises a storage node;
a ground doped region located on the border region; and
a light-shielding layer located on the pixel array region and the border region and electrically connected to the ground doped region, wherein the light-shielding layer comprises a first light-shielding layer and a second light-shielding layer, the first light-shielding layer is located on the pixel array region and covers the storage node, and the second light-shielding layer is located on the border region and surrounds the global shutter component.
2 . The image sensor according to claim 1 , further comprising a plurality of first contacts located on the pixel array region, wherein the first contacts are physically connected to the light-shielding layer.
3 . The image sensor according to claim 1 , wherein the light-shielding layer only exposes a light incident/electrical connection portion of the pixel array region, a light incident portion in the light incident/electrical connection portion corresponds to a photodiode in the global shutter component, and an electrical connection portion in the light incident/electrical connection portion corresponds to a plurality of gates in the global shutter component.
4 . The image sensor according to claim 1 , wherein the substrate further comprises a peripheral region, the border region is located between the pixel array region and the peripheral region, and the second light-shielding layer isolates the global shutter component on the pixel array region from a peripheral circuit element on the peripheral region.
5 . The image sensor according to claim 1 , wherein a top surface of the second light-shielding layer is higher than a top surface of the first light-shielding layer.
6 . The image sensor according to claim 5 , further comprising a plurality of second contacts located on the pixel array region, wherein the second contacts are electrically connected to the global shutter component, and top surfaces of the second contacts are coplanar with the top surface of the second light-shielding layer.
7 . The image sensor according to claim 5 , wherein the second light-shielding layer has a stepped profile.
8 . The image sensor according to claim 1 , wherein a top surface of the first light-shielding layer is coplanar with a top surface of the second light-shielding layer.
9 . The image sensor according to claim 8 , further comprising a plurality of second contacts located on the pixel array region, wherein the second contacts are electrically connected to the global shutter component, and top surfaces of the second contacts are higher than the top surface of the first light-shielding layer and the top surface of the second light-shielding layer.
10 . The image sensor according to claim 8 , wherein the second light-shielding layer does not have a stepped profile.