Imaging device, electronic device, and manufacturing method
The present technology relates to an imaging device, an electronic device, and a manufacturing method capable of evaluating a chip at a desired timing. The imaging device includes: a first semiconductor chip; and a second semiconductor chip stacked on the first semiconductor chip, in which at least one surface of side surfaces of the first semiconductor chip and at least one surface of side surfaces of the second semiconductor chip are on the same plane. The first semiconductor chip includes a first structure having a ring-shape, and the second semiconductor chip is disposed at a position straddling the first structure on the first semiconductor chip. The present technology can be applied to, for example, an imaging device in which a plurality of semiconductor chips is stacked.
1 . An imaging device, comprising:
a first semiconductor chip; and
a second semiconductor chip stacked on the first semiconductor chip, wherein
at least one surface of side surfaces of the first semiconductor chip and at least one surface of side surfaces of the second semiconductor chip are on a same plane,
the first semiconductor chip includes a first structure having a ring-shape, and
the second semiconductor chip is at a position straddling the first structure on the first semiconductor chip.
2 . The imaging device according to claim 1 ,
wherein the second semiconductor chip includes a second structure having a ring-shape, and
the first structure and the second structure are at substantially a same position in a stacking direction.
3 . The imaging device according to claim 2 ,
wherein the first structure and the second structure are guard rings.
4 . The imaging device according to claim 2 ,
wherein the first structure and the second structure are connected.
5 . The imaging device according to claim 2 ,
wherein the first structure and the second structure are arranged at a predetermined interval.
6 . The imaging device according to claim 1 ,
wherein the first semiconductor chip and the second semiconductor chip are connected by a bump.
7 . The imaging device according to claim 1 , further comprising a third semiconductor chip stacked on the second semiconductor chip.
8 . The imaging device according to claim 1 , further comprising a third semiconductor chip stacked on the first semiconductor chip.
9 . The imaging device according to claim 7 , wherein
the first semiconductor chip and the second semiconductor chip have substantially a same size, and
the third semiconductor chip is smaller than the first semiconductor chip.
10 . The imaging device according to claim 1 , wherein
the first semiconductor chip is a chip on which an imaging element is formed, and
the second semiconductor chip is a chip on which a logic circuit or a memory circuit is formed.
11 . The imaging device according to claim 1 ,
wherein a first surface of the first semiconductor chip and a second surface of the second semiconductor chip on the same plane are end surfaces at a time of dicing.
12 . The imaging device according to claim 11 ,
wherein the second surface is in a region for pellet check.
13 . The imaging device according to claim 11 ,
wherein the second surface has a portion of an element that is in a region for pellet check.
14 . An electronic device, comprising:
an imaging device including:
a first semiconductor chip; and
a second semiconductor chip stacked on the first semiconductor chip, wherein
at least one surface of side surfaces of the first semiconductor chip and at least one surface of side surfaces of the second semiconductor chip being on a same plane,
the first semiconductor chip includes a first structure having a ring-shape, and
the second semiconductor chip is at a position straddling the first structure on the first semiconductor chip; and
a processing unit configured to process a signal from the imaging device.
15 . A manufacturing method, comprising:
transferring a second semiconductor chip to a wafer on which a first semiconductor chip is formed; and
dicing the wafer in a state in which the second semiconductor chip is stacked, wherein
the second semiconductor chip in which a region for pellet check is formed is transferred to the wafer,
the region is also diced when diced with the wafer,
the first semiconductor chip includes a first structure having a ring-shape, and
the second semiconductor chip is at a position straddling the first structure on the first semiconductor chip.