Stack structure and manufacturing method thereof, capacitor using the same, transistor using the same, dye-sensitized solar cell using the same, and architectural film for window glass coating using the same
Provided is a method for manufacturing a stack structure. The method for manufacturing a stack structure includes: preparing a substrate; forming a two-dimensional semiconductor material on the substrate; and oxidizing the two-dimensional semiconductor material using oxygen plasma to form a high-k material layer including the high-k material. The stack structure manufactured through the above-described method may be easily applied to a MOS capacitor, a field effect transistor (FET), an impact ionization super-tilt switching device, a dye-sensitized solar cell, an architectural film (particularly, a film used for window coating), and the like.
1 . A method for manufacturing a stack structure, the method comprising:
preparing a substrate;
forming a channel layer including a two-dimensional (2D) semiconductor material including hafnium diselenide (HfSe 2 ) on the substrate; and
oxidizing the channel layer using oxygen (O 2 ) plasma to form a dielectric layer including a high-k material comprising hafnium oxide (HfO x , x>0),
wherein a power of oxygen (O 2 ) plasma is controlled to be greater than 7 W and less than 20 W,
wherein an interface is formed between the channel layer and the dielectric layer by substitution of selenium atoms of the hafnium diselenide (HfSe 2 ) with oxygen atoms penetrating into the channel layer and replacing the selenium atoms of the hafnium diselenide (HfSe 2 ),
wherein there is no collapse of the interface formed between the channel layer and the dielectric layer, and
wherein a thickness of the dielectric layer formed by oxidizing the channel layer satisfies Equation 3 below,
t
0
-
t
3
=
1.8
t
1
-
t
1
=
0.8
t
1
〈
Equation
3
〉
(t 0 : a thickness of an initial channel layer, t 1 : the thickness of the dielectric layer formed by oxidizing the channel layer, t 3 : a combined total thickness of a post-oxidation channel layer and the dielectric layer).
2 . The method of claim 1 , wherein as the channel layer is oxidized, one region of the channel layer is converted into the dielectric layer including the high-k material, and
the other region of the channel layer remains as the channel layer including the two-dimensional semiconductor material.
3 . The method of claim 1 , wherein the thickness of the dielectric layer is controlled according to an exposure time of the channel layer to the oxygen (O 2 ) plasma.