Chip wet-transferring device
A chip wet-transferring device includes a chamber, a support member provided in the chamber and configured to support a transfer substrate, the transfer substrate including a plurality of grooves and on which a plurality of micro-semiconductor chips are disposed, and a magnetic field generator configured to remove a first micro-semiconductor chip from among the plurality of micro-semiconductor chips that is disposed on the transfer substrate and at least partially outside of the plurality of grooves on the transfer substrate by generating a magnetic field that moves the first micro-semiconductor chip in a direction substantially parallel with an upper surface of the transfer substrate.
1 . A chip wet-transferring device comprising:
a chamber;
a support member provided in the chamber and configured to support a transfer substrate comprising a plurality of grooves on an upper surface thereof and on which a plurality of micro-semiconductor chips are disposed; and
a magnetic field generator facing the upper surface of the transfer substrate and configured to remove, from the upper surface of the transfer substrate, a first micro-semiconductor chip, from among the plurality of micro-semiconductor chips, that is disposed, prior to activation of the magnetic field generator, on the upper surface of the transfer substrate and partially inside of the plurality of grooves or between two grooves of the plurality of grooves by generating a magnetic field that moves the first micro-semiconductor chip in a direction substantially parallel with the upper surface of the transfer substrate.
2 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator is further configured to move the first micro-semiconductor chip to a space between the transfer substrate and a lateral surface of the chamber by using the magnetic field.
3 . The chip wet-transferring device of claim 1 , wherein a size of a space between the transfer substrate and a lateral surface of the chamber is greater than a size of the first micro-semiconductor chip.
4 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator is further configured to provide the magnetic field in the direction that is substantially parallel with the upper surface of the transfer substrate.
5 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator is further configured to provide the magnetic field in a direction substantially perpendicular to the upper surface of the transfer substrate.
6 . The chip wet-transferring device of claim 5 , further comprising an actuator configured to move the magnetic field generator in the direction that is substantially parallel with the upper surface of the transfer substrate.
7 . The chip wet-transferring device of claim 5 , further comprising a separation film provided under the magnetic field generator.
8 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator is provided outside the chamber.
9 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator is provided outside of a lateral surface of the chamber.
10 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator comprises an electromagnet configured to generate the magnetic field based on an applied electric signal.
11 . The chip wet-transferring device of claim 1 , wherein the magnetic field generator comprises a plurality of cells, and each of the plurality of cells is configured to independently generate a magnetic field.
12 . The chip wet-transferring device of claim 11 , wherein a size of a cell of the plurality of cells is less than a size of the first micro-semiconductor chip.
13 . The chip wet-transferring device of claim 1 , further comprising a liquid supply module configured to supply liquid to the transfer substrate and that at least partially covers the first micro-semiconductor chip.
14 . The chip wet-transferring device of claim 13 , wherein the liquid supply module is further configured to supply the liquid such that a distance from the upper surface of the transfer substrate to a surface of the liquid is greater than a size of the first micro-semiconductor chip.
15 . The chip wet-transferring device of claim 1 , wherein at least one of the support member and the magnetic field generator is configured to perform at least one of a rotary motion, a tilt motion, a vibratory motion, a vertical motion, and a horizontal motion.
16 . The chip wet-transferring device of claim 1 , wherein a first adhesive force at the upper surface of the transfer substrate or a first surface energy density at the upper surface of the transfer substrate is less than a second adhesive force at least one groove of the plurality of grooves or a second surface energy density at the at least one groove of the plurality of grooves.
17 . The chip wet-transferring device of claim 1 , wherein a convex pattern is formed on the upper surface of the transfer substrate.
18 . The chip wet-transferring device of claim 17 , wherein a width of the convex pattern is less than a width of the first micro-semiconductor chip.
19 . The chip wet-transferring device of claim 1 , wherein the first micro-semiconductor chip is a light-emitting device comprising an electrode provided on a surface of the light-emitting device, and
wherein the electrode comprises a magnetic material.
20 . A method of chip wet-transferring, the method comprising:
providing a transfer substrate comprising a plurality of grooves on an upper surface thereof and on which a plurality of micro-semiconductor chips are disposed;
supporting the transfer substrate with a support member;
accommodating the support member in a chamber; and
removing, by a magnetic field generator facing the upper surface of the transfer substrate, a first micro-semiconductor chip, from among the plurality of micro-semiconductor chips, that is disposed, prior to activation of the magnetic field generator, on the upper surface of the transfer substrate and partially inside of the plurality of grooves or between two grooves of the plurality of grooves by generating a magnetic field that moves the first micro-semiconductor chip in a direction substantially parallel with the upper surface of the transfer substrate.