Light-emitting devices, preparation method thereof, and display panels

1 . A light-emitting device comprising an anode layer and a cathode layer disposed opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, and a first interface-modifying layer disposed between the light-emitting layer and the anode layer,

wherein the first interface-modifying layer comprises a thiophene-based polymer and a graphyne doped in the thiophene-based polymer, and the first interface-modifying layer comprises a first sub-layer disposed on the light-emitting layer and a second sub-layer disposed between the first sub-layer and the anode layer, and a doping ratio of the graphyne in the first sub-layer is greater than a doping ratio of the graphyne in the second sub-layer.

2 . The light-emitting device according to claim 1 , wherein the doping ratio of the graphyne in the first interface-modifying layer gradually decreases in a direction from the light-emitting layer toward the anode layer.

3 . The light-emitting device according to claim 1 , wherein a second interface-modifying layer is provided between the first interface-modifying layer and the light-emitting layer, and a material of the second interface-modifying layer is a graphyne.

4 . The light-emitting device according to claim 1 , wherein a third interface-modifying layer is provided between the first interface-modifying layer and the anode layer, and a material of the third interface-modifying layer is a thiophene-based polymer.

5 . The light-emitting device according to claim 1 , wherein the thiophene-based polymer comprises m structural units represented by formula 1 and n structural units represented by formula 2:

wherein R 1 to R 3 are independently selected from an alkyl group having 1 to 10 carbon atoms, * represents a linking site, m and n are independently selected from a natural number, and at least one of m and n is not 0.

6 . The light-emitting device according to claim 5 , wherein R 1 to R 3 are independently selected from butyl, pentyl, or hexyl.

7 . The light-emitting device according to claim 1 , wherein a material of the anode layer is a carbon electrode material, and a material of the light-emitting layer is a perovskite semiconductor material.

8 . A method for preparing a light-emitting device, comprising:

S 10 : providing a substrate; and

S 20 : sequentially forming an anode layer, a first interface-modifying layer, a light-emitting layer, and a cathode layer on the substrate, or sequentially forming a cathode layer, a light-emitting layer, a first interface-modifying layer, and an anode layer on the substrate, wherein the first interface-modifying layer comprises a thiophene-based polymer and a graphyne doped in the thiophene-based polymer, and the first interface-modifying layer comprises a first sub-layer disposed on the light-emitting layer and a second sub-layer disposed between the first sub-layer and the anode layer, and a doping ratio of the graphyne in the first sub-layer is greater than a doping ratio of the graphyne in the second sub-layer.

9 . The method according to claim 8 , wherein the step of forming the first interface-modifying layer comprises:

providing an ink of the first interface-modifying layer comprising the thiophene-based polymer and the graphyne;

applying the ink of the first interface-modifying layer on the anode layer or the light-emitting layer to form an ink layer;

curing the ink layer to form a thiophene-based polymer-graphyne blend layer; and

placing the substrate on which the thiophene-based polymer-graphyne blend layer is formed in an electric field, and converting the thiophene-based polymer-graphyne blend layer into the first interface-modifying layer under an electric field force, wherein the electric field is in a direction perpendicular to the substrate.

10 . A display panel comprising a light-emitting device, wherein the light-emitting device comprises an anode layer and a cathode layer disposed opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, and a first interface-modifying layer disposed between the light-emitting layer and the anode layer, and

the first interface-modifying layer comprises a thiophene-based polymer and a graphyne doped in the thiophene-based polymer, and the first interface-modifying layer comprises a first sub-layer disposed on the light-emitting layer and a second sub-layer disposed between the first sub-layer and the anode layer, and a doping ratio of the graphyne in the first sub-layer is greater than a doping ratio of the graphyne in the second sub-layer.

11 . The display panel according to claim 10 , wherein the doping ratio of the graphyne in the first interface-modifying layer gradually decreases in a direction from the light-emitting layer toward the anode layer.

12 . The display panel according to claim 10 , wherein a second interface-modifying layer is provided between the first interface-modifying layer and the light-emitting layer, and a material of the second interface-modifying layer is a graphyne.

13 . The display panel according to claim 10 , wherein a third interface-modifying layer is provided between the first interface-modifying layer and the anode layer, and a material of the third interface-modifying layer is a thiophene-based polymer.

14 . The display panel according to claim 10 , wherein the thiophene-based polymer comprises m structural units represented by formula 1 and n structural units represented by formula 2:

wherein R 1 to R 3 are independently selected from an alkyl group having 1 to 10 carbon atoms, * represents a linking site, m and n are independently selected from a natural number, and at least one of m and n is not 0.

15 . The display panel according to claim 14 , wherein R 1 to R 3 are independently selected from butyl, pentyl, or hexyl.

16 . The display panel according to claim 10 , wherein a material of the anode layer is a carbon electrode material, and a material of the light-emitting layer is a perovskite semiconductor material.