Multi-wavelength light-emitting device and method of manufacturing the same

1 . A method of manufacturing a multi-wavelength light-emitting device comprising a first sub-pixel configured to emit light of a first wavelength, a second sub-pixel configured to emit light of a second wavelength, and a third sub-pixel configured to emit light of a third wavelength, the method comprising:

depositing a first type semiconductor layer on a substrate;

forming a first nanopore having a first porosity in a first area of the first type semiconductor layer corresponding to the first sub-pixel;

forming a second nanopore having a second porosity in a second area of the first type semiconductor layer corresponding to the second sub-pixel, the second porosity being different from the first porosity;

depositing an active layer on the first type semiconductor layer;

forming a second type semiconductor layer on the active layer; and

forming an electrode on the second type semiconductor layer,

wherein the forming the first nanopore and the second nanopore comprises forming the first nanopore and the second nanopore by an electrochemical wet etching method using a mask that sequentially opens the first area and the second area over time or using a mask that opens the first area and partially opens the second area.

2 . The method of claim 1 , wherein the forming the first nanopore and the second nanopore comprises forming the first nanopore and the second nanopore by the electrochemical wet etching method using the mask configured to open the first area and partially open the second area, and

wherein the mask that is configured to open the first area and partially open the second area is further configured to close a third area of the first type semiconductor layer corresponding to the third sub-pixel.

3 . The method of claim 1 , further comprising forming a first current blocking layer between the first sub-pixel and the second sub-pixel, and

forming a second current blocking layer between the second sub-pixel and the third sub-pixel.

4 . The method of claim 1 , wherein the first porosity is greater than the second porosity,

wherein the light of the first wavelength comprises red light, and

wherein the light of the second wavelength comprises green light.

5 . The method of claim 1 , wherein the first porosity is adjusted by at least one of a size and a density of the first nanopore, and

wherein the second porosity is adjusted by at least one of a size and a density of the second nanopore.

6 . The method of claim 1 , wherein the first porosity is in a range of about 20% to about 70%.

7 . The method of claim 1 , wherein a diameter of the first nanopore is in a range of about 30 nm to about 200 nm.

8 . The method of claim 1 , wherein the first type semiconductor layer comprises an n-type gallium nitride (GaN), and

wherein the second type semiconductor layer comprises a p-type GaN.

9 . The method of claim 1 , wherein the active layer comprises indium gallium nitride (InGaN) or aluminum indium gallium nitride (AlInGaN).

10 . A method of manufacturing a multi-wavelength light-emitting device comprising a first sub-pixel configured to emit light of a first wavelength, a second sub-pixel configured to emit light of a second wavelength, and a third sub-pixel configured to emit light of a third wavelength, the method comprising:

depositing a first type semiconductor layer on a substrate;

forming a first nanopore having a first porosity in a first area of the first type semiconductor layer corresponding to the first sub-pixel;

forming a second nanopore having a second porosity in a second area of the first type semiconductor layer corresponding to the second sub-pixel, the second porosity being different from the first porosity;

depositing an active layer on the first type semiconductor layer;

forming a second type semiconductor layer on the active layer; and

forming an electrode on the second type semiconductor layer,

wherein the forming the first nanopore comprises:

arranging a first mask on the first type semiconductor layer, the first mask configured to open the first area of the first type semiconductor layer and close the second area of the first type semiconductor layer and a third area of the first type semiconductor layer; and

forming the first nanopore in the first area of the first type semiconductor layer by an electrochemical wet etching method using the first mask.

11 . The method of claim 10 , wherein the forming the second nanopore comprises:

after removing the first mask, arranging a second mask on the first type semiconductor layer, the second mask being configured to close the first area of the first type semiconductor layer and the third area of the first type semiconductor layer, and open the second area of the first type semiconductor layer; and

forming the second nanopore in the second area of the first type semiconductor layer by an electrochemical etching method using the second mask.

12 . A method of manufacturing a multi-wavelength light-emitting device comprising a first sub-pixel configured to emit light of a first wavelength, a second sub-pixel configured to emit light of a second wavelength, and a third sub-pixel configured to emit light of a third wavelength, the method comprising:

depositing a first type semiconductor layer on a substrate;

forming a first nanopore having a first porosity in a first area of the first type semiconductor layer corresponding to the first sub-pixel;

forming a second nanopore having a second porosity in a second area of the first type semiconductor layer corresponding to the second sub-pixel, the second porosity being different from the first porosity;

depositing an active layer on the first type semiconductor layer;

forming a second type semiconductor layer on the active layer; and

forming an electrode on the second type semiconductor layer,

wherein the method further comprises:

forming a first ion implantation area between the first area of the first type semiconductor layer and the second area of the first type semiconductor layer, and

forming a second ion implantation area between the second area of the first type semiconductor layer and a third area of the first type semiconductor layer.