Display device and light emitting element
A display device includes a first electrode and a second electrode, spaced apart from each other, and light emitting elements disposed between the first electrode and the second electrode. Each of the light emitting elements includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. A thickness of the active layer is in a range of about 1 nm to about 2.8 nm, the active layer includes InGa 1-x N (about 0.18≤x≤about 0.20). The light emitting elements emit light with a wavelength in a range of about 462 nm to about 472 nm in a current density in a range of about 0.5 A/cm 2 to about 100 A/cm 2 .
1 . A display device comprising:
a first electrode and a second electrode, spaced apart from each other; and
light emitting elements disposed between the first electrode and the second electrode, wherein
each of the light emitting elements includes:
a first semiconductor layer;
a second semiconductor layer disposed on the first semiconductor layer; and
an active layer disposed between the first semiconductor layer and the second semiconductor layer,
a thickness of the active layer is in a range of about 1 nm to about 2.8 nm,
the active layer includes InGa 1-x N (about 0.18≤x≤about 0.20), and
the light emitting elements emit light with a wavelength in a range of about 462 nm to about 472 nm in a current density in a range of about 0.5 A/cm 2 to about 100 A/cm 2 .
2 . The display device of claim 1 , wherein
the first electrode overlaps the first semiconductor layer in a plan view, and
the second electrode overlaps the second semiconductor layer in a plan view.
3 . The display device of claim 2 , further comprising:
a first connection electrode and a second connection electrode, disposed on the light emitting elements.
4 . The display device of claim 3 , wherein
the first connection electrode is electrically connected to the first semiconductor layer, and
the second connection electrode is electrically connected to the second semiconductor layer.
5 . The display device of claim 3 , wherein
the first connection electrode is electrically connected to the first electrode, and
the second connection electrode is electrically connected to the second electrode.
6 . The display device of claim 1 , further comprising:
a color conversion layer disposed on the light emitting elements.
7 . The display device of claim 6 , wherein the color conversion layer includes a first color conversion layer, a second color conversion layer, and a light scattering layer.
8 . The display device of claim 7 , wherein
the first color conversion layer includes a first quantum dot, and
the second color conversion layer includes a second quantum dot.
9 . The display device of claim 7 , wherein the light scattering layer includes a light scattering particle.
10 . The display device of claim 7 , further comprising:
a color filter layer disposed on the color conversion layer.
11 . The display device of claim 10 , wherein the color filter layer includes:
a first color filter overlapping the first color conversion layer in a plan view;
a second color filter overlapping the second color conversion layer in a plan view; and
a third color filter overlapping the light scattering layer in a plan view.
12 . The display device of claim 11 , further comprising:
a light blocking layer disposed between the first, second, and third color filters.
13 . The display device of claim 1 , wherein the thickness of the active layer is in a range of about 1 nm to about 2.4 nm.
14 . The display device of claim 1 , wherein the light emitting elements emit light with a wavelength in a range of about 466 nm to about 469 nm in a current density of about 12 A/cm 2 .
15 . The display device of claim 1 , wherein a thickness of each of the light emitting elements is less than or equal to about 4 μm.
16 . A light emitting element comprising:
a first semiconductor layer;
a second semiconductor layer disposed on the first semiconductor layer; and
an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein
a thickness of the active layer is in a range of about 1 nm to about 2.8 nm,
the active layer includes InGa 1-x N (about 0.18≤x≤about 0.20), and
the light emitting element emits light with a wavelength in a range of about 462 nm to about 472 nm in a current density in a range of about 0.5 A/cm 2 to about 100 A/cm 2 .
17 . The light emitting element of claim 16 , wherein the thickness of the active layer is in a range of about 1 nm to about 2.4 nm.
18 . The light emitting element of claim 16 , wherein the light emitting element emits light with a wavelength in a range of about 466 nm to about 469 nm in a current density of about 12 A/cm 2 .
19 . The light emitting element of claim 16 , further comprising:
an electrode layer disposed on the first semiconductor layer.
20 . The light emitting element of claim 16 , further comprising:
an insulative film surrounding the first semiconductor layer, the active layer, and the second semiconductor layer.