Light-emitting device and method for manufacturing same, and display substrate and display apparatus
View Patent ↗A light-emitting device and a manufacturing method thereof, a display substrate and a display apparatus are provided in the embodiments of the present disclosure. The light-emitting device includes: a first electrode disposed on a base substrate; a quantum dot light-emitting layer disposed at a side of the first electrode away from the base substrate; and an electron transport layer disposed at a side of the quantum dot light-emitting layer close to or away from the first electrode, the electron transport layer including a first transport sub-layer and a second transport sub-layer which are arranged in layer configuration, a material of the first transport sub-layer and a material of the second transport sub-layer both including n-type metal oxides, and an oxygen content of the first transport sub-layer being less than an oxygen content of the second transport sub-layer.
1 . A light-emitting device, comprising:
a first electrode disposed on a base substrate;
a quantum dot light-emitting layer disposed at a side of the first electrode away from the base substrate; and
an electron transport layer disposed at a side of the quantum dot light-emitting layer close to or away from the first electrode, the electron transport layer comprising a first transport sub-layer and a second transport sub-layer which are arranged in layer configuration, a material of the first transport sub-layer and a material of the second transport sub-layer both comprising n-type metal oxides, and an oxygen content of the first transport sub-layer being less than an oxygen content of the second transport sub-layer.
2 . The light-emitting device according to claim 1 , wherein a thickness of the first transport sub-layer is 2 to 4 times a thickness of the second transport sub-layer.
3 . The light-emitting device according to claim 1 , wherein a total thickness of the electron transport layer is between 5 nm and 150 nm.
4 . The light-emitting device according to claim 1 , wherein the first transport sub-layer is arranged at a side of the quantum dot light-emitting layer away from the base substrate, and the second transport sub-layer is arranged at a side of the first transport sub-layer away from the base substrate.
5 . The light-emitting device according to claim 1 , wherein the first transport sub-layer is arranged between the quantum dot light-emitting layer and the first electrode, and the second transport sub-layer is arranged between the first transport sub-layer and the first electrode.
6 . The light-emitting device according to claim 1 , wherein the light-emitting device further comprises a hole injection layer, a hole transport layer and a second electrode, wherein the first electrode is arranged opposite to the second electrode, the hole injection layer, the hole transport layer, the electron transport layer and the quantum dot light-emitting layer are all arranged between the first electrode and the second electrode, the hole transport layer is arranged at a side of the quantum dot light-emitting layer away from the electron transport layer and the hole injection layer is arranged at a side of the hole transport layer away from the quantum dot light-emitting layer.
7 . The light-emitting device according to claim 1 , wherein the electron transport layer is made of at least one of: zinc oxide, zinc magnesium oxide, gallium doped zinc oxide or aluminum doped zinc oxide.
8 . A display substrate, comprising the light-emitting device according to claim 1 .
9 . A display apparatus, comprising the display substrate according to claim 8 .
10 . The display substrate according to claim 8 , wherein a thickness of the first transport sub-layer is 2 to 4 times a thickness of the second transport sub-layer.
11 . The display substrate according to claim 8 , wherein a total thickness of the electron transport layer is between 5 nm and 150 nm.
12 . The display substrate according to claim 8 , wherein the first transport sub-layer is arranged at a side of the quantum dot light-emitting layer away from the base substrate, and the second transport sub-layer is arranged at a side of the first transport sub-layer away from the base substrate.
13 . A manufacturing method of a light-emitting device, comprising:
forming a first electrode on a base substrate; and
forming an electron transport layer and a quantum dot light-emitting layer respectively, wherein the quantum dot light-emitting layer is arranged at a side of the first electrode away from the base substrate; and the electron transport layer is arranged at a side of the quantum dot light-emitting layer close to or away from the first electrode;
wherein forming the electron transport layer comprises:
forming a first transport sub-layer and a second transport sub-layer respectively through a sputtering process, wherein a material of the first transport sub-layer and a material of the second transport sub-layer both comprises n-type metal oxides; and a sputtering gas in forming the first transport sub-layer comprises an inert gas, and a sputtering gas in forming the second transport sub-layer comprises an inert gas and oxygen.
14 . The manufacturing method according to claim 13 , wherein in forming the second transport sub-layer, a flow of the oxygen is 1% to 30% of a flow of the inert gas.
15 . The manufacturing method according to claim 14 , wherein the flow of the inert gas is between 30 sccm to 60 sccm in forming the second transport sub-layer.
16 . The manufacturing method according to claim 13 , wherein a thickness of the first transport sub-layer is 2 to 4 times a thickness of the second transport sub-layer.
17 . The manufacturing method according to claim 13 , wherein a total thickness of the electron transport layer is between 5 nm and 150 nm.
18 . The manufacturing method according to claim 13 , wherein in forming the first transport sub-layer and the second transport sub-layer, an air pressure in a sputtering chamber is between 0.4 Pa and 1 Pa, and power of a radio frequency source in the sputtering chamber is between 20 W and 150 W.
19 . The manufacturing method according to claim 13 , wherein the step of forming the first transport sub-layer is performed before or after the step of forming the quantum dot light-emitting layer; and
the step of forming the second transport sub-layer is performed after or before the step of forming the first transport sub-layer.
20 . The manufacturing method according to claim 13 , wherein the step of forming the electron transport layer is performed before the step of forming the quantum dot light-emitting layer, and the manufacturing method further comprises:
forming the hole transport layer at a side of the quantum dot light-emitting away from the base substrate;
forming the hole injection layer at a side of the hole transport layer away from the base substrate; and
forming the second electrode at a side of the hole injection layer away from the base substrate; or,
the step of forming the electron transport layer is performed after the step of forming the quantum dot light-emitting layer, and the manufacturing method further comprises:
forming the hole injection layer at the side of the first electrode away from the base substrate;
forming the hole transport layer at the side of the hole injection layer away from the base substrate; and
forming the second electrode at the side of the electron transport layer away from the base substrate.