Organic light emitting diode display
An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.
1 . An organic light emitting diode display, comprising:
a substrate;
a semiconductor layer on the substrate;
an overlap layer disposed between the substrate and the semiconductor layer;
a first gate conductor disposed on and overlapping the semiconductor layer;
a data conductor disposed on the first gate conductor and disposed in a layer above a layer of the first gate conductor;
a driving transistor on the overlap layer, the driving transistor includes a first electrode formed by doping a first region of the semiconductor layer, a second electrode formed by doping a second region of the semiconductor layer, a channel formed between the first electrode and the second electrode, and a first gate electrode formed of the first gate conductor to overlap the channel; and
an organic light emitting diode connected with the driving transistor,
wherein
the data conductor includes a data line,
the first electrode of the driving transistor includes a first part extending in the same direction as an extension direction of the data line and directly connected to the data line,
the overlap layer includes a base portion that overlaps the channel of the driving transistor,
the overlap layer includes a first extension portion that overlaps the first part of the first electrode and the data line, and
the first extension portion is integrally formed with the base portion.
2 . The organic light emitting diode display of claim 1 , wherein
the second electrode of the driving transistor includes a second part extending in the same direction as the extension direction of the data line,
the first extension portion of the overlap layer does not overlap the second part of the second electrode.
3 . The organic light emitting diode display of claim 1 , wherein
a buffer layer is disposed between the overlap layer and the semiconductor layer, and
the base portion and the channel of the driving transistor constitute a first additional storage capacitor.
4 . The organic light emitting diode display of claim 1 , wherein
a buffer layer is disposed between the overlap layer and the semiconductor layer, and
the first extension portion and the first electrode of the semiconductor layer constitute a second additional storage capacitor.
5 . The organic light emitting diode display of claim 1 , wherein
the overlap layer extends so that a side of the overlap layer adjacent to the first electrode of the driving transistor coincides with a side of the first electrode of the driving transistor in a plan view.
6 . The organic light emitting diode display of claim 1 , wherein a distance between the overlap layer and an overlap layer of another pixel that is disposed adjacent to the overlap layer is in a range of 2.0 μm to 2.5 μm.
7 . The organic light emitting diode display of claim 1 , wherein the overlap layer does not overlap an entirety of the semiconductor layer.
8 . The organic light emitting diode display of claim 1 , wherein at least a portion of the data conductor is directly on the first gate electrode.
9 . The organic light emitting diode display of claim 1 , wherein at least a portion of the data conductor overlaps the first gate electrode.
10 . An organic light emitting diode display, comprising:
a substrate;
a semiconductor layer on the substrate;
an overlap layer disposed between the substrate and the semiconductor layer;
a first gate conductor disposed on and overlapping the semiconductor layer;
a data conductor disposed on the first gate conductor and disposed in a layer above a layer of the first gate conductor;
a driving transistor on the overlap laver, the driving transistor includes a first electrode formed by doping a first region of the semiconductor layer, a second electrode formed by doping a second region of the semiconductor layer, a channel formed between the first electrode and the second electrode, and a first gate electrode formed of the first gate conductor to overlap the channel; and
an organic light emitting diode connected with the driving transistor,
wherein
the data conductor includes a data line
the overlap layer includes a base portion that overlaps the channel of the driving transistor,
the overlap layer includes a first extension portion that overlaps the first electrode of the driving transistor and the data line, and
the first extension portion is integrally formed with the base portion;
a storage line on and overlapping the first gate electrode;
a driving voltage line formed of a portion of the data conductor; and
a gate insulating layer between the first gate electrode and the storage line, wherein
a driving voltage is applied to the storage line through the driving voltage line, and
the first gate electrode and the storage line constitute a storage capacitor that maintains a voltage across the first gate electrode.
11 . The organic light emitting diode display of claim 10 , further comprising
a second transistor and a third transistor, wherein
the second transistor is connected to a scan line and a data line to transmit a data voltage transmitted through the data line to the first electrode of the driving transistor,
the third transistor is connected to the first gate electrode and the second electrode of the driving transistor to transfer the data voltage to the storage capacitor.
12 . The organic light emitting diode display of claim 11 , wherein
a part of the second electrode of the driving transistor extends in the same direction as the extension direction of the data line.
13 . The organic light emitting diode display of claim 12 , wherein
the overlap layer includes a second extension portion,
the second extension portion is integrally formed with the base portion,
the second extension portion overlaps at least a portion of the part of the second electrode of the driving transistor.
14 . The organic light emitting diode display of claim 13 , wherein
the second extension portion overlaps the third transistor.
15 . The organic light emitting diode display of claim 14 , wherein
the second extension portion overlaps a gate electrode of the third transistor.
16 . The organic light emitting diode display of claim 13 , wherein
the second extension portion of the overlap layer and the semiconductor layer of the third transistor constitute a third additional storage capacitor.
17 . The organic light emitting diode display of claim 13 , wherein
the overlap layer and the second electrode of the driving transistor constitute a fourth additional storage capacitor.
18 . An organic light emitting diode display, comprising:
a substrate;
a semiconductor layer on the substrate;
an overlap layer disposed between the substrate and the semiconductor layer;
a first gate conductor disposed on and overlapping the semiconductor layer;
a data conductor disposed on the first gate conductor and disposed in a layer above a layer of the first gate conductor;
a driving transistor on the overlap layer, the driving transistor includes a first electrode formed by doping a first region of the semiconductor layer, a second electrode formed by doping a second region of the semiconductor laver, a channel formed between the first electrode and the second electrode, and a first gate electrode formed of the first gate conductor to overlap the channel; and
an organic light emitting diode connected with the driving transistor,
wherein
the data conductor includes a data line
the overlap layer includes a base portion that overlaps the channel of the driving transistor,
the overlap layer includes a first extension portion that overlaps the first electrode of the driving transistor and the data line,
the first extension portion is integrally formed with the base portion, and
a first distance between a side of the first gate electrode adjacent to the first electrode of the driving transistor and a side of the base portion of the overlap layer adjacent to the first electrode of the driving transistor is in a range of 1.0 μm to 4.0 μm.