IP Library › Granted Patent US 12672483
Granted Patent B2
US 12672483 · App. 17/865,610 · Granted Jun 30, 2026

Method of making thermoelectric materials

Inventors: Yakubu Sani Wudil (Dhahran, SA); Mohammed A. Gondal (Dhahran, SA)
Assignee: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
H10N10/01C01G19/006H10N10/857C01P2002/34C01P2002/76C01P2002/77C01P2006/32C01P2006/40
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Quick Facts
Patent No.
US 12672483
App. No.
17/865,610
Granted
Jun 30, 2026
Kind
B2
Abstract

A method of making a CsSnI 3 perovskite thermoelectric (TE) material including mixing a fatty acid, a fatty amine, a C 8 -C 30 hydrocarbon, and Cs 2 CO 3 in a vessel to form a cesium mixture; heating the cesium mixture to a temperature of 400-450 K to form a heated mixture; dissolving SnI 2 in an organophosphine to form a tin solution; mixing the tin solution and the heated mixture to form a reaction mixture; cooling the reaction mixture to form a precipitate comprising a CsSnI 3 perovskite; enclosing the CsSnI 3 perovskite in a chamber; pressurizing the chamber to a hydrostatic pressure of at least 0.1 GPa; and heating the chamber to a temperature of 300-1,000 K to form the CsSnI 3 perovskite TE material having a ZT that is at least 0.1.

Claims (20)

1 . A method of making a CsSnI 3 perovskite thermoelectric material having a figure of merit (FoM ZT) from 1 to 1.5, comprising:

mixing a fatty acid, a fatty amine, a C8-C30 hydrocarbon, and Cs 2 CO 3 in a vessel to form a cesium mixture;

heating the cesium mixture to a temperature of 400-450 K to form a heated mixture;

dissolving SnI 2 in an organophosphine to form a tin solution;

mixing the tin solution and the heated mixture to form a reaction mixture in an enclosed chamber;

pressurizing the chamber containing the reaction mixture to a hydrostatic pressure of 1.7 GPa;

heating the chamber and the reaction mixture to a temperature of 500 to 600 K;

then cooling the reaction mixture to form a precipitate comprising the CsSnI 3 perovskite thermoelectric material having a FoM ZT from 1 to 1.5,

wherein the bandgap of the CsSnI 3 perovskite thermoelectric material is 0 eV,

wherein the bandgap of the CsSnI 3 perovskite thermoelectric material is inverted at a pressure of 1.7 GPa, and

wherein FoM ZT represents an efficiency of the CsSnI 3 perovskite thermoelectric material's energy conversion process.

2 . The method of claim 1 , wherein the CsSnI 3 perovskite has a cubic, tetragonal, or orthorhombic phase.

3 . The method of claim 1 , wherein the CsSnI 3 perovskite has a cubic phase.

4 . The method of claim 1 , wherein an electrical conductivity of the CsSnI 3 perovskite thermoelectric material increases as the hydrostatic pressure of the chamber increases.

5 . The method of claim 1 , wherein a Seebeck coefficient of the CsSnI 3 perovskite thermoelectric material decreases as the hydrostatic pressure of the chamber increases.

6 . The method of claim 1 , wherein the chamber and the reaction mixture are heated to a temperature of 540-560 K.

7 . The method of claim 1 , wherein the chamber and the reaction mixture are heated to a temperature of 500-550 K.

8 . The method of claim 1 , wherein the chamber and the reaction mixture are heated to a temperature of 550-600 K.

9 . The method of claim 1 , wherein the CsSnI 3 perovskite thermoelectric material has a FoM ZT from 1.1 to 1.4.

10 . The method of claim 9 , wherein the CsSnI 3 perovskite thermoelectric material has a FoM ZT from 1.2 to 1.3.