Piezoelectric film-attached substrate and piezoelectric element
There are provided a piezoelectric film-attached substrate and piezoelectric element, which include, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide containing lead as a main component of an A site, and a buffer layer, where the buffer layer contains a metal oxide represented by M d N 1-d O e . Here, M consists of one or more metal elements substitutable for the A site of the perovskite-type oxide and has an electronegativity of less than 0.95. In a case of 0<d<1 and in a case where the electronegativity is denoted by X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×10 12 , t1=0.0306, and y0=0.59958.
1 . A piezoelectric film-attached substrate comprising, on a substrate in the following order:
a lower electrode layer;
a piezoelectric film; and
a buffer layer,
wherein the piezoelectric film contains a perovskite-type oxide represented by General Formula ABO 3 , the perovskite-type oxide containing lead as a main component of an A site,
the buffer layer contains a first metal oxide represented by General Formula (1),
M d N 1-d O e (1)
M consists of one or more metal elements substitutable for the A site of the perovskite-type oxide and has an electronegativity of less than 0.95,
N includes, as a main component, at least one selected from the group of Sc, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ir, Ni, Cu, Zn, Ga, Sn, In, and Sb,
O is an oxygen element, and
d and e represent a compositional ratio, which satisfies 0<d<1 and 1≤e≤3, and in a case where the electronegativity is denoted by X,
1.41 X− 1.05≤ d≤A 1·exp(− X/t 1)+ y 0
A1=1.68×10 12 , t1=0.0306, and y0=0.59958.
2 . The piezoelectric film-attached substrate according to claim 1 , further comprising:
a growth control layer between the lower electrode layer and the piezoelectric film,
wherein the growth control layer contains a second metal oxide represented by General Formula (1).
3 . The piezoelectric film-attached substrate according to claim 1 ,
wherein the first metal oxide contained in the buffer layer, M of General Formula (1) includes, as a main component, at least one selected from the group of Li, Na, K, Mg, Ca, Sr, Ba, La, Cd, and Bi.
4 . The piezoelectric film-attached substrate according to claim 1 ,
wherein the first metal oxide contained in the buffer layer, M of General Formula (1) contains Ba as a main component.
5 . The piezoelectric film-attached substrate according to claim 1 ,
wherein the first metal oxide contained in the buffer layer, M of General Formula (1) is Ba.
6 . The piezoelectric film-attached substrate according to claim 1 ,
wherein the first metal oxide contained in the buffer layer, d in General Formula (1) is
0.2 ≤d.
7 . The piezoelectric film-attached substrate according to claim 1 ,
wherein the first metal oxide contained in the buffer layer, d in General Formula (1) is
0.3 ≤d.
8 . The piezoelectric film-attached substrate according to claim 1 ,
wherein the first metal oxide contained in the buffer layer, d in General Formula (1) is
0.45 ≤d.
9 . A piezoelectric element comprising:
the piezoelectric film-attached substrate according to claim 1 ; and
an upper electrode layer provided on the buffer layer.