Substrate processing method and substrate processing apparatus
A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.
1 . A substrate processing method, comprising:
(a) etching a metal polycrystalline film at a peripheral portion of a substrate by moving a nozzle at a first speed from an outside of the substrate to a center side of the substrate beyond an edge of the substrate while rotating the substrate having the metal polycrystalline film formed on a front surface thereof and discharging an etching liquid from the nozzle;
(b) etching the metal polycrystalline film at the peripheral portion of the substrate by moving the nozzle having passed the edge of the substrate to a preset position on the center side of the substrate at a second speed lower than the first speed while rotating the substrate and discharging the etching liquid from the nozzle;
(c) washing away an etching residue generated in the etching of the metal polycrystalline film by moving the nozzle at the second speed with a rinse liquid by supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the etching of the metal polycrystalline film by moving the nozzle at the second speed while rotating the substrate; and
(d) drying the substrate after the washing away of the etching residue,
wherein in (a) and (b), the substrate is rotated at the same rotational speed.
2 . A substrate processing apparatus, comprising:
a rotating/holding device configured to hold and rotate a substrate having a metal polycrystalline film formed on a front surface thereof;
a chemical liquid supply configured to supply an etching liquid to the front surface of the substrate;
a rinse liquid supply configured to supply a rinse liquid to the front surface of the substrate; and
a controller and a storage including a computer program, wherein the storage and the computer program are configured, with the controller, to perform:
a first processing of etching the metal polycrystalline film at a peripheral portion of the substrate by controlling the rotating/holding device to hold and rotate the substrate, and also controlling the chemical liquid supply to move a nozzle at a first speed from an outside of the substrate to a center side of the substrate beyond an edge of the substrate while discharging the etching liquid from the nozzle of the chemical liquid supply,
a second processing of etching the metal polycrystalline film at the peripheral portion of the substrate by controlling the rotating/holding device to hold and rotate the substrate, and also controlling the chemical liquid supply to move the nozzle having passed the edge of the substrate to a preset position on the center side of the substrate at a second speed lower than the first speed while discharging the etching liquid from the nozzle,
a third processing of washing away an etching residue generated in the second processing with the rinse liquid by controlling the rotating/holding device to hold and rotate the substrate, and also controlling the rinse liquid supply to supply the rinse liquid to a position closer to the center side of the substrate than a supply position of the etching liquid in the second processing, and
a fourth processing of drying the substrate by controlling the rotating/holding device to hold and rotate the substrate,
wherein in the first processing and the second processing, the substrate is rotated at the same rotational speed.