Substrate processing apparatus and substrate processing method using the same

1 . A substrate processing apparatus comprising:

a process chamber including a process space;

a stage configured to support a substrate;

a rotator configured to rotate the stage;

a pressurizing pump configured to increase a pressure in the process space; and

a cleaning agent discharger configured to spray a cleaning agent into the process space,

wherein the cleaning agent discharger includes:

a discharge ring including a discharge path through which the cleaning agent flows; and

a plurality of discharge nozzles connected to the discharge ring and spaced apart in a circumferential direction about a central axis of the stage,

wherein each discharge nozzle of the plurality of discharge nozzles includes an elastic portion including an elastic hole that is configured to be opened and closed,

wherein each discharge nozzle of the plurality of discharge nozzles further includes:

a discharge body including a spray space and a central hole;

a piezoelectric element configured to open and close the elastic hole of the corresponding elastic portion; and

a filter between the elastic portion and the discharge ring, the filter being configured to block an inflow of foreign substances into the discharge nozzle, and

wherein the elastic portion of each discharge nozzle of the plurality of discharge nozzles is configured to control a spraying cycle and a spraying amount of the cleaning agent.

2 . The substrate processing apparatus of claim 1 , wherein the process chamber includes:

a first portion;

a second portion selectively coupled to the first portion to open and close the process space; and

a coupling that couples the first portion with the second portion to seal the process space.

3 . The substrate processing apparatus of claim 1 , further comprising a first heater inside the stage and configured to apply heat to the stage,

wherein the stage further includes a support pin configured to move up and down.

4 . The substrate processing apparatus of claim 1 , further comprising:

an infrared light source configured to apply infrared light to the stage; and

a second heater coupled to one of an upper surface or side surfaces of the process chamber to face the stage.

5 . The substrate processing apparatus of claim 1 , wherein the pressurizing pump includes:

an inlet pump connected to one side of the process space to inject pressurized gas into the process space; and

an outlet pump connected to the other side of the process space to discharge pressurized gas in the process space.

6 . The substrate processing apparatus of claim 1 , further comprising an inert gas nozzle configured to inject an inert gas into the process space.

7 . A substrate processing apparatus comprising:

a process chamber including a process space;

a stage in the process space and configured to support a substrate;

a rotator below the stage and configured to rotate the stage;

a pressurizing pump configured to increase a pressure in the process space; and

a cleaning agent discharger configured to spray a cleaning agent into the process space,

wherein the cleaning agent discharger includes:

a discharge ring including a discharge passage; and

a discharge nozzle connected to the discharge ring, and

wherein the discharge nozzle includes:

a discharge body including a spray space connected to the discharge passage and a central hole through which the cleaning agent is sprayed into the process space;

a piezoelectric element; and

an elastic portion including an elastic hole that is opened and closed by the piezoelectric element, the elastic portion being configured to discharge the cleaning agent from the discharge passage into the process space to control a spraying cycle and a spraying amount of the cleaning agent.

8 . The substrate processing apparatus of claim 7 , wherein the discharge nozzle includes:

a first fixing ring fixing the elastic portion to the discharge body;

a second fixing ring spaced apart from the first fixing ring in a direction of the discharge ring; and

a filter between the piezoelectric element and the elastic portion, fixed to the discharge body by the first fixing ring and the second fixing ring, and configured to block an inflow of foreign substances into the discharge nozzle.

9 . The substrate processing apparatus of claim 7 , wherein the cleaning agent discharger includes a plurality of discharge nozzles that are provided to be spaced upward from the stage and arranged in a circumferential direction about a central axis of the stage, wherein the discharge nozzle is one of the plurality of discharge nozzles.

10 . The substrate processing apparatus of claim 7 , wherein the process chamber includes:

a first portion;

a second portion configured to be coupled to the first portion; and

a coupling between the first portion and the second portion and configured to couple the first portion with the second portion,

wherein the first portion and the second portion are separated from each other in an uncoupled state such that a substrate is configured to be introduced into the process chamber in the uncoupled state.

11 . The substrate processing apparatus of claim 7 , wherein the stage includes support pins configured to support the substrate and move up and down,

a second heater on the stage and configured to heat an upper surface of the stage; and

a first heater within the stage and including a heating wiring configured to heat the upper surface of the stage.

12 . The substrate processing apparatus of claim 9 , wherein a central hole of each of the plurality of discharge nozzles extends horizontally toward the central axis of the stage.

13 . The substrate processing apparatus of claim 7 , further comprising an inert gas nozzle configured to spray an inert gas on the stage,

wherein the pressurizing pump includes:

an inlet pump configured to increase a pressure of the process space to 2.5 atmospheres or more; and

an outlet pump configured to lower the pressure of the process space.