Method of fabricating semiconductor device
A method of fabricating a semiconductor device is disclosed. The method may include forming an etch-target layer, a mask layer, a blocking layer, and a photoresist layer, which are sequentially stacked on a substrate; forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light; forming a mask layer, the forming the mask layer including etching the mask layer using the photoresist pattern as an etch mask; and forming a target pattern, the forming the target pattern including etching the etch-target layer using the mask pattern as an etch mask. The photoresist layer may include an organic metal oxide. The blocking layer may be a non-polar layer and may limit and/or prevent a metallic element in the photoresist layer from infiltrating into the mask layer.
1 . A method of forming a target pattern, the method comprising:
forming an etch-target layer, a mask layer, a blocking layer, an under layer, and a photoresist layer, which are sequentially stacked on a substrate,
the photoresist layer including an organic metal oxide having a metallic element, and
the blocking layer being a non-polar layer configured to limit the metallic element of the organic metal oxide in the photoresist layer from infiltrating into the mask layer;
forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light;
selectively forming a capping layer on a surface of the photoresist pattern such that the capping layer is not formed on an exposed surface of the under layer, the exposed surface of the under layer being exposed by the photoresist pattern and a part of the capping layer over the under layer such that the exposed surface of the under layer does not vertically overlap the capping layer, the selectively forming the capping layer on the surface of the photoresist pattern being performed through a deposition process in which a silicon precursor reacts selectively with the organic metal oxide originated from the photoresist layer that is on the surface of the photoresist pattern after the forming the photoresist pattern;
forming a mask pattern, the forming the mask pattern including etching the mask layer using the photoresist pattern as an etch mask; and
etching the etch-target layer using the mask pattern as an etch mask.
2 . The method of claim 1 , wherein the blocking layer comprises SiC, amorphous silicon, SiOC, SiCH, or borophosphosilicate glass (BPSG).
3 . The method of claim 2 , wherein the blocking layer comprises SiC.
4 . The method of claim 1 , wherein
the photoresist layer comprises organotin oxide, and
the blocking layer is configured to limit tin (Sn) in the photoresist layer from infiltrating into the mask layer.
5 . The method of claim 1 , wherein
the mask layer comprises a first mask layer and a second mask layer,
the first mask layer comprises an amorphous carbon layer, and
the second mask layer comprises a silicon layer, a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer.
6 . The method of claim 1 ,
wherein the capping layer comprises silicon (Si).
7 . The method of claim 6 , wherein
the forming the capping layer comprises providing the silicon precursor on the surface of the photoresist pattern, and
the silicon precursor selectively reacts with the surface of the photoresist pattern to form a silicon layer on the surface of the photoresist pattern.
8 . The method of claim 1 , wherein
the target pattern comprises a first interconnection line and a second interconnection line, which are adjacent to each other, and
a smallest distance between a first end of the first interconnection line and a second end of the second interconnection line ranges from 10 nm to 30 nm.
9 . The method of claim 8 , wherein
a first curvature radius of the first end of the first interconnection line is larger than a linewidth of the first interconnection line,
the first interconnection line further comprises a third end that is opposite the first end, and
a second curvature radius of the third end is larger than the first curvature radius.
10 . The method of claim 1 , wherein
the substrate comprises an edge region and a center region,
the edge region is a peripheral region of the substrate and surrounds the center region of the substrate,
the edge region is adjacent to a sidewall of the substrate,
the edge region comprises the metallic element, which is diffused from the photoresist layer, and
a concentration of the metallic element in the edge region ranges from 1 E 9 /cm 3 to 1E11/cm 3 .
11 . The method of claim 1 , wherein
the photoresist layer comprises organotin oxide as the organic metal oxide, and
the blocking layer comprises SiC, amorphous silicon, SiOC, SiCH, or borophosphosilicate glass (BPSG).
12 . The method of claim 11 , wherein
the mask layer comprises a first mask layer and a second mask layer,
the first mask layer comprises an amorphous carbon layer, and
the second mask layer comprises a silicon layer, a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer.
13 . The method of claim 11 , wherein
the capping layer comprises silicon (Si),
the forming the capping layer comprises providing the silicon precursor on the surface of the photoresist pattern, and
the silicon precursor selectively reacts with the surface of the photoresist pattern to form a silicon layer on the surface of the photoresist pattern.
14 . A method of forming a target pattern, the method comprising:
forming an etch-target layer, a mask layer, a blocking layer, an under layer, and a photoresist layer, which are sequentially stacked on a substrate,
the photoresist layer including an organic metal oxide;
forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light;
forming a silicon layer on a surface of the photoresist pattern, the forming the silicon layer including providing a silicon precursor on the surface of the photoresist pattern, the silicon precursor selectively reacting with the surface of the photoresist pattern such that the silicon layer is formed selectively on the surface of the photoresist pattern and is not formed on an exposed surface of the under layer, the exposed surface of the under layer and a part of the silicon layer over the under layer such that the exposed surface of the under layer does not vertically overlap the silicon layer, the forming the silicon layer on the surface of the photoresist pattern being performed through a deposition process in which the silicon precursor reacts selectively with the organic metal oxide originated from the photoresist layer that is on the surface of the photoresist pattern after the forming the photoresist pattern;
etching the blocking layer using the photoresist pattern as an etch mask, the etching the blocking layer including removing the silicon layer;
forming another silicon layer on the surface of the photoresist pattern;
forming a mask pattern, the forming the mask pattern including etching the mask layer using the photoresist pattern as an etch mask; and
etching the etch-target layer using the mask pattern as an etch mask, wherein
the under layer is disposed between the blocking layer and the photoresist layer.
15 . The method of claim 14 , wherein
the silicon precursor comprises silicon tetrachloride.
16 . The method of claim 14 ,
wherein the under layer comprises an organic polymer.
17 . The method of claim 14 , wherein
the blocking layer comprises SiC, amorphous silicon (Si), SiOC, SiCH, or borophosphosilicate glass (BPSG),
the organic metal oxide in the photoresist layer includes a metallic element,
the blocking layer is configured to limit the metallic element in the organic metal oxide of the photoresist layer from infiltrating into the mask layer.
18 . The method of claim 14 , wherein
the photoresist layer comprises organotin oxide as the organic metal oxide, and
the blocking layer comprises SiC, amorphous silicon, SiOC, SiCH, or borophosphosilicate glass (BPSG), and
the exposed surface of the under layer is a part of a top surface of the under layer that is exposed by the photoresist pattern and spaced apart from a sidewall of the photoresist pattern.
19 . The method of claim 18 , wherein
the silicon precursor comprises silicon tetrachloride, and
the under layer comprises an organic polymer.