Manufacturing method for device embedded packaging structure

1 . A method for manufacturing a device embedded packaging structure, the method comprising:

laminating a first dielectric material on a top surface of a copper foil to form a first dielectric layer, and forming a first feature pattern in the first dielectric layer to expose the copper foil;

etching an exposed copper foil to form a device opening frame and a via post opening frame so as to obtain a metal frame having the first dielectric layer;

applying an adhesive layer on a bottom surface of the metal frame, and mounting a device on the adhesive layer in the device opening frame, wherein a terminal of the device is attached on the adhesive layer;

laminating a second dielectric material to form a second dielectric layer, wherein the second dielectric layer covers the first dielectric layer and fills the device opening frame and the via post opening frame, and then removing the adhesive layer to expose the terminal of the device; and

forming a via post in the via post opening frame, and forming a first wiring layer on an upper surface of the second dielectric layer and a second wiring layer on the bottom surface of the metal frame, wherein the terminal of the device is connected with the second wiring layer, and the first wiring layer and the second wiring layer are conductively connected by the via post.

2 . The manufacturing method according to claim 1 , wherein the first dielectric material and the second dielectric material are the same or different.

3 . The manufacturing method according to claim 2 , wherein the first dielectric material and/or the second dielectric material comprises an inorganic filler reinforced polymer matrix.

4 . The manufacturing method according to claim 3 , wherein the polymer matrix is selected from polyimide, epoxy resin, bismaleimide triazine resin, polyphenylene ether, or a combination thereof.

5 . The manufacturing method according to claim 3 , wherein the inorganic filler is selected from a ceramic filler, a glass fiber, or a combination thereof.

6 . The manufacturing method according to claim 3 , wherein the polymer matrix is a photosensitive polymer resin.

7 . The manufacturing method according to claim 1 , wherein the laminating of the first dielectric material comprises roughening a surface of the copper foil.

8 . The manufacturing method according to claim 1 , wherein the laminating of the first dielectric material comprises forming a first feature pattern in the first dielectric layer by means of laser drilling, mechanical drilling, plasma etching, or exposure and development.

9 . The manufacturing method according to claim 1 , wherein the adhesive layer comprises an adhesive tape.

10 . The manufacturing method according to claim 1 , wherein the applying of the adhesive layer comprises attaching a terminal surface of the device onto the adhesive layer in the device opening frame.

11 . The manufacturing method according to claim 10 , wherein the laminating of the second dielectric material further comprises removing the adhesive layer after laminating the second dielectric material on a top surface of the metal frame to form the second dielectric layer.

12 . The manufacturing method according to claim 11 , wherein the laminating of the second dielectric material further comprises:

after removing the adhesive layer, laminating the second dielectric material on the bottom surface of the metal frame to form the second dielectric layer.

13 . The manufacturing method according to claim 1 , wherein the forming of the via post comprises:

forming a via in the via post opening frame;

depositing a first metal seed layer in the via and on the upper surface and the lower surface of the second dielectric layer;

electroplating copper on the first metal seed layer, forming a via post in the via, and respectively forming a first copper layer and a second copper layer on the upper surface and the lower surface of the second dielectric layer;

etching the first copper layer and the second copper layer to respectively form the first wiring layer and the second wiring layer; and

etching the exposed first metal seed layer.

14 . The manufacturing method according to claim 13 , wherein the etching of the first copper layer and the second copper layer further comprises:

respectively applying a first photoresist layer and a second photoresist layer on the first copper layer and the second copper layer, and patterning the first photoresist layer and the second photoresist layer to expose the first copper layer and the second copper layer;

respectively etching exposed first copper layer and second copper layer to form the first wiring layer and the second wiring layer; and

removing the first photoresist layer and the second photoresist layer.

15 . The manufacturing method according to claim 13 , wherein the first metal seed layer is deposited by means of electroless plating or sputtering.

16 . The manufacturing method according to claim 15 , wherein the first metal seed layer comprises titanium, copper, titanium tungsten alloy, or a combination thereof.

17 . The manufacturing method according to claim 1 , further comprising applying a first solder resist layer and a second solder resist layer on the first wiring layer and the second wiring layer, respectively, and treating an exposed metal surface to form a solder resist window.

18 . The manufacturing method according to claim 1 , further comprising:

performing layer-increasing process on the first wiring layer and/or the second wiring layer to form an additional layer so as to form a multilayer interconnected structure.

19 . The manufacturing method according to claim 18 , wherein the additional layer comprises a dielectric layer and a wiring layer.

20 . The manufacturing method according to claim 19 , wherein the performing of the layer-increasing process further comprises applying a solder resist layer on an outermost side wiring layer and treating an exposed metal surface to form a solder resist window.