Clips for semiconductor package and related methods
Implementations of a clip may include a first copper layer directly bonded to a first side of a ceramic layer, a second copper layer directly bonded to a second side of the ceramic layer, the second side of the ceramic layer opposite the first side of the ceramic layer, and a plurality of channels partially etched into a thickness of the second copper layer.
1 . A semiconductor package comprising:
a direct bond copper (DBC) clip coupled to a plurality of semiconductor die;
a second DBC clip coupled to the plurality of semiconductor die; and
a substrate directly coupled to the DBC clip and the second DBC clip;
wherein the plurality of die are coupled between one of the DBC clip or the second DBC clip and the substrate.
2 . The semiconductor package of claim 1 , wherein the DBC clip comprises a copper layer directly bonded to the plurality of semiconductor die.
3 . The semiconductor package of claim 1 , further comprising one or more channels formed into a copper layer of the DBC clip.
4 . The semiconductor package of claim 3 , wherein the one or more channels are directly over one or more spaces between die of the plurality of semiconductor die.
5 . The semiconductor package of claim 1 , wherein the second DBC clip and the DBC clip are arranged over the substrate in a side-by-side orientation.
6 . The semiconductor package of claim 1 , wherein the plurality of semiconductor die are configured to be cooled on both a first side and a second side.
7 . The semiconductor package of claim 3 , wherein the one or more channels correspond in width and location to one or more spaces between the die of the plurality of semiconductor die.
8 . A semiconductor package comprising:
a first direct bond copper (DBC) clip coupled directly over two or more semiconductor die of a plurality of semiconductor die;
a second DBC clip coupled directly over two or more semiconductor die of the plurality of semiconductor die; and
a substrate directly coupled to the first DBC clip and the second DBC clip;
wherein the plurality of die are coupled between one of the first DBC clip or the second DBC clip and the substrate;
wherein the first DBC clip and the second DBC clip are coupled over the plurality of die in a side-by-side orientation; and
wherein the first DBC clip and the second DBC clip each comprise a plurality of channels formed in a copper layer.
9 . The semiconductor package of claim 8 , wherein the copper layer of the first DBC clip is directly bonded to the plurality of semiconductor die.
10 . The semiconductor package of claim 8 , further comprising a third DBC clip coupled over the plurality of semiconductor die in a side-by-side orientation with the first DBC clip and the second DBC clip.
11 . The semiconductor package of claim 8 , wherein the first DBC clip is directly coupled to a substrate through a first solder pad and the second DBC clip is directly coupled to the substrate through a second solder pad.
12 . The semiconductor package of claim 8 , wherein the plurality of channels extend both partially through and entirely through the copper layer.
13 . The semiconductor package of claim 8 , wherein the plurality of channels are directly over one or more spaces between the one or more semiconductor die.
14 . A semiconductor package comprising:
a direct bond copper (DBC) clip coupled directly over two or more semiconductor die of a plurality of semiconductor die;
a second DBC clip coupled directly over two or more semiconductor die of the plurality of semiconductor die; and
a substrate coupled directly under the plurality of die and directly coupled to the DBC clip and the second DBC clip;
wherein the plurality of die are coupled between one of the DBC clip or the second DBC clip and the substrate.
15 . The semiconductor package of claim 14 , further comprising a plurality of heat dissipation channels in a copper layer of the DBC clip.