IP Library › Granted Patent US 12672562
Granted Patent B2
US 12672562 · App. 17/900,692 · Granted Jun 30, 2026

Cavity-less interconnect component on glass core

Inventors: Jeremy D. Ecton (Gilbert, AZ); Hiroki Tanaka (Gilbert, AZ); Brandon Christian Marin (Gilbert, AZ); Srinivas V. Pietambaram (Chandler, AZ); Suddhasattwa Nad (Chandler, AZ)
Assignee: Intel Corporation
H10W70/65H10W70/05H10W70/093H10W70/095H10W70/611H10W70/685H10W70/692H10W90/00H10W90/401H10W74/15H10W90/724H10W90/734
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Quick Facts
Patent No.
US 12672562
App. No.
17/900,692
Granted
Jun 30, 2026
Kind
B2
Abstract

A glass core with a cavity-less local interconnect component architecture for complex multi-die packages. The apparatus has the local interconnect component attached directly to a planar glass layer and surrounded by mold. One or more redistribution layers may be located above and below the apparatus.

Claims (60)

1 . An apparatus, comprising:

a glass layer having an upper surface, a lower surface, and a plurality of through-glass vias (TGVs) traversing from the upper surface to the lower surface;

the TGVs substantially filled with a conductive material;

a local interconnect component attached to the upper surface of the glass layer via an attachment means, the local interconnect component having an upper surface with a first conductive contact and a second conductive contact, the first conductive contact being in electrical communication with the second conductive contact, the local interconnect component further being positioned over a first TGV of the plurality of TGVs;

a mold layer located on the upper surface of the glass layer and adjacent to the local interconnect component, the mold layer having an upper surface co-planar with the upper surface of the local interconnect component;

the first conductive contact and second conductive contact exposed at the upper surface of the local interconnect component;

a conductive pillar positioned over a second TGV of the plurality of TGVs and extending from the upper surface of the glass layer to the upper surface of the mold layer, the conductive pillar being exposed at the upper surface of the mold layer;

a first die attached to the first conductive contact and the conductive pillar; and

a second die attached to the second conductive contact.

2 . The apparatus of claim 1 , further comprising a solder resist layer located on the upper surface of the mold layer and patterned to expose the first conductive contact, second conductive contact, and conductive pillar.

3 . The apparatus of claim 1 , further comprising underfill between the first die and upper surface of the mold layer and underfill between the second die and the upper surface of the mold layer.

4 . The apparatus of claim 1 , wherein the local interconnect component is a silicon bridge.

5 . The apparatus of claim 1 , wherein the local interconnect component further has a through-silicon via (TSV) that connects to a third TGV of the plurality of TGVs and the first die further connects to the third TGV via the TSV.

6 . The apparatus of claim 1 , further comprising a package substrate attached to the TGVs at the lower surface of the glass layer.

7 . The apparatus of claim 1 , further comprising a redistribution layer located on the upper surface of the mold layer, the redistribution layer having therein respective interconnect structures attached to the first conductive contact, the second conductive contact, and the conductive pillar.

8 . The apparatus of claim 1 , further comprising a redistribution layer located under the lower surface of the glass layer, the redistribution layer having therein respective interconnect structures attached to the TGVs.

9 . The apparatus of claim 1 , further comprising:

a package substrate attached to the lower surface of the glass layer; and

a thermal solution attached to the apparatus.

10 . The apparatus of claim 1 , wherein the upper surface of the local interconnect component is not in contact with the mold layer.

11 . The apparatus of claim 1 , wherein the mold layer laterally surrounds the local interconnect component.

12 . An apparatus, comprising:

a glass layer having an upper surface, a lower surface, and a plurality of through-glass vias (TGVs) traversing from the upper surface to the lower surface;

the TGVs substantially filled with a conductive material;

a local interconnect component attached to the upper surface of the glass layer via hybrid bonding to a first TGV of the plurality of TGVs, the local interconnect component having an upper surface with a first conductive contact and a second conductive contact, the first conductive contact being in electrical communication with the second conductive contact;

a mold layer located on the upper surface of the glass layer and adjacent to the local interconnect component, the mold layer having an upper surface co-planar with the upper surface of the local interconnect component;

the first conductive contact and second conductive contact being exposed at the upper surface of the local interconnect component;

a conductive pillar positioned over a second TGV of the plurality of TGVs and extending from the upper surface of the glass layer to the upper surface of the mold layer, the conductive pillar being exposed at the upper surface of the mold layer;

a first die attached to the first conductive contact and conductive pillar; and

a second die attached to the second conductive contact.

13 . The apparatus of claim 12 , wherein the local interconnect component is a silicon bridge.

14 . The apparatus of claim 12 , wherein the local interconnect component further has a through-silicon via (TSV) that connects to a third TGV of the plurality of TGVs and the first die further connects to the third TGV via the TSV.

15 . The apparatus of claim 12 , further comprising a package substrate attached to the TGVs at the lower surface of the glass layer.

16 . The apparatus of claim 12 , further comprising a solder resist layer located on the upper surface of the mold layer and patterned to expose the first conductive contact, second conductive contact, and conductive pillar.

17 . The apparatus of claim 12 , further comprising underfill between the first die and upper surface of the mold layer and underfill between the second die and the upper surface of the mold layer.

18 . An apparatus, comprising:

a glass layer having an upper surface, a lower surface, and a plurality of through-glass vias (TGVs) traversing from the upper surface to the lower surface;

the TGVs substantially filled with a conductive material;

a local interconnect component attached to the upper surface of the glass layer via a bond film to a first TGV of the plurality of TGVs, the local interconnect component having an upper surface with a first conductive contact and a second conductive contact, the first conductive contact being in electrical communication with the second conductive contact;

a mold layer located on the upper surface of the glass layer and adjacent to the local interconnect component, the mold layer having an upper surface co-planar with the upper surface of the local interconnect component;

the first conductive contact and second conductive contact being exposed at the upper surface of the local interconnect component;

a conductive pillar positioned over a second TGV of the plurality of TGVs and extending from the upper surface of the glass layer to the upper surface of the mold layer, the conductive pillar being exposed at the upper surface of the mold layer;

a first die attached to the first conductive contact and conductive pillar; and

a second die attached to the second conductive contact.

19 . The apparatus of claim 18 , wherein the local interconnect component is a silicon bridge.

20 . The apparatus of claim 18 , wherein the local interconnect component further has a through-silicon via (TSV) that connects to a third TGV of the plurality of TGVs and the first die further connects to the third TGV via the TSV.

21 . The apparatus of claim 18 , further comprising a package substrate attached to the TGVs at the lower surface of the glass layer.

22 . The apparatus of claim 18 , further comprising a solder resist layer located on the upper surface of the mold layer and patterned to expose the first conductive contact, second conductive contact, and conductive pillar.

23 . The apparatus of claim 18 , further comprising underfill between the first die and upper surface of the mold layer and underfill between the second die and the upper surface of the mold layer.

24 . A method, comprising:

patterning a glass layer having an upper surface and a lower surface with a plurality of through-glass vias (TGVs);

substantially filling the TGVs with a conductive material;

forming a copper pillar on the upper surface of the glass layer, positioned over a first TGV of the plurality of TGVs;

attaching a local interconnect component to the upper surface of the glass layer, positioned over a second TGV of the plurality of TGVs, the local interconnect component having an upper surface with a first conductive contact and a second conductive contact, the first conductive contact being in electrical communication with the second conductive contact;

overlaying the upper surface of the glass layer, copper pillar, and local interconnect component with a mold;

planarizing the mold to expose a top of the copper pillar, the first conductive contact and the second conductive contact, and the upper surface of the local interconnect component;

attaching a first die to the first conductive contact and the copper pillar; and

attaching a second die to the second conductive contact.

25 . The method of claim 24 , further comprising:

attaching a package substrate to the plurality of TGVs at the lower surface of the glass layer.