A method includes configuring a bonding tool based on a first semiconductor die and a second semiconductor die, wherein the bonding tool includes a platform and a first bonding head and a second bonding head connected to the platform; attaching the first semiconductor die to the first bonding head; moving the first semiconductor die toward a semiconductor wafer to bond the first semiconductor die to the semiconductor wafer; releasing the first semiconductor die from the first bonding head; configuring the platform to cause the second bonding head to move the second semiconductor die to the location over the semiconductor wafer while keeping the first bonding head on the platform; and moving the second semiconductor die by the second bonding head toward the semiconductor wafer to bond the second semiconductor die to the semiconductor wafer.
1 . A method, comprising:
configuring a bonding tool based on a first semiconductor die and a second semiconductor die, wherein the bonding tool comprises a platform and a first bonding head and a second bonding head connected to the platform;
attaching the first semiconductor die to the first bonding head and moving the first semiconductor die to a location over a semiconductor wafer arranged on a stage;
moving the first semiconductor die toward the semiconductor wafer to bond the first semiconductor die to the semiconductor wafer through a fusion bonding or a hybrid bonding;
releasing the first semiconductor die from the first bonding head;
configuring the platform to cause the second bonding head to move the second semiconductor die to the location over the semiconductor wafer while keeping the first bonding head on the platform; and
moving the second semiconductor die by the second bonding head toward the semiconductor wafer to bond the second semiconductor die to the semiconductor wafer through the fusion bonding or the hybrid bonding,
wherein the first bonding head comprises first vacuum holes configured to suck the first semiconductor die, wherein the second bonding head comprises second vacuum holes configured to suck the second semiconductor die, wherein a number of the first vacuum holes is different from that of the second vacuum holes.
2 . The method of claim 1 , wherein each of the first bonding head and the second bonding head comprises an air channel configured to pump air from the first vacuum holes or the second vacuum holes.
3 . The method of claim 1 , wherein the configuring of the first and second bonding heads is performed based on a shape or an area of each of the first and second semiconductor dies.
4 . The method of claim 1 , wherein the first vacuum holes or the second vacuum holes include a circular shape, a rectangular shape or a ring shape from a top-view perspective.
5 . The method of claim 1 , wherein at least one of the first vacuum holes or the second vacuum holes has a circular shape or a strip shape from a bottom-view perspective.
6 . The method of claim 1 , wherein the first bonding head includes a central region and a peripheral region, wherein a first group of the first vacuum holes in the central region have a first width, measured from a cross-sectional view, different from a second width of a second group of the first vacuum holes in the peripheral region.
7 . The method of claim 1 , wherein the first vacuum holes have a first pitch in a central region of the first bonding head different than a second pitch of the vacuum holes in a peripheral region of the first bonding head.
8 . The method of claim 1 , wherein the configuring of the platform further comprises causing a lower surface of the first bonding head lower than a lower surface of the second bonding head before attaching the first semiconductor die to the first bonding head.
9 . The method of claim 1 , wherein the platform comprises a revolving nosepiece, wherein the configuring of the platform comprises rotating the revolving nosepiece to cause the first or second bonding head to face the semiconductor wafer.
10 . The method of claim 1 , wherein the configuring of the platform comprises causing a longitudinal axis of the first or second bonding head to be parallel to a longitudinal axis of a shaft of the bonding tool.
11 . The method of claim 1 , wherein the platform comprises a turntable configured to rotate the first and second bonding heads at a same level during the rotation of the platform.
12 . The method of claim 1 , wherein each of the first and second bonding heads comprises a bending member configured to bend the first or second semiconductor die when attaching the first or second semiconductor die to the first or second bonding head.
13 . A method, comprising:
forming a first semiconductor die and a second semiconductor die for a bonded semiconductor device, the first and second semiconductor dies have different sizes;
configuring a bonding tool, wherein the bonding tool comprises a platform, and a first bonding head and a second bonding head connected to the platform, wherein the first and second bonding heads have different suction configurations;
selecting the first bonding head as a working bonding head;
picking the first semiconductor die by the first bonding head and bonding the first semiconductor die to a semiconductor wafer;
selecting the second bonding head as the working bonding head; and
picking the second semiconductor die by the second bonding head and bonding the second semiconductor die to the semiconductor wafer to thereby form the bonded semiconductor device,
wherein the first bonding head and the second bonding head have different suction forces.
14 . The method of claim 13 , wherein the platform comprises a turntable configured to rotate the first and second bonding heads at a same level during the rotation of the platform.
15 . The method of claim 13 , wherein the platform comprises a first socket and a second socket, wherein each of the first and second bonding heads comprises a lifting device in the first or second socket and configured to lift the respective first or second bonding head in a vertical direction.
16 . The method of claim 13 , wherein each of the first and second bonding heads are configured to conduct a fusion bonding or a hybrid bonding.
17 . The method of claim 13 , wherein the first bonding head comprises a first body and a first chuck connected to the first body, the second bonding head comprises a second body and a second chuck connected to the second body, wherein the first body and the second body have substantially equal sizes, and the first chuck and the second chuck have different numbers of vacuum holes.
18 . A method, comprising:
providing a bonding tool comprising a platform and a plurality of bonding heads connected to the platform in different connection orientations;
attaching a first semiconductor die to a wafer by a first one of the plurality of bonding heads;
releasing the first semiconductor die from the first one of the plurality of bonding heads; and
rotating the platform to cause a second one of the plurality of bonding heads to attach a second semiconductor die to the wafer,
wherein each of the first and second bonding heads comprises a bending member configured to bend the first or second semiconductor die when attaching the first or second semiconductor die to the first or second bonding head, respectively.
19 . The method of claim 18 , wherein each of the plurality of bonding heads is connected to a same lower surface of the platform.
20 . The method of claim 18 , wherein the platform is configured to position one of the plurality of bonding heads to face directly downward while keeping remaining bonding heads oriented away from the downward direction.