Semiconductor device and manufacturing method thereof

1 . A method for manufacturing a semiconductor device, comprising:

providing a top wafer, wherein the top wafer comprises a top chip substrate and a top chip bonding pad disposed on a front side of the top chip substrate;

providing a first wafer, wherein the first wafer comprises a first substrate, and a first device and a first bonding pad that are disposed on a front side of the first substrate;

bonding the front side of the top wafer to the front side of the first wafer and electrically connecting the top chip bonding pad to the first bonding pad, so that the front side of the top wafer faces upwards, and the front side of the first wafer faces downwards;

forming, on a back side of the first substrate, a first interconnection layer comprising a first interconnection layer-bonding pad;

providing a second wafer, wherein the second wafer comprises a second substrate, a second device and a second bonding pad that are disposed on a front side of the second substrate;

bonding the front side of the second wafer to the first interconnection layer, and electrically connecting the first interconnection layer-bonding pad to the second bonding pad, so that the second wafer is bonded to the first wafer to form a bonding structure in which the front side of the second wafer faces downwards; and

flipping the bonding structure to put a back side of the top chip substrate to the top, enabling the front side of the first wafer to face upwards and the front side of the second wafer to face upwards, and forming a pad pin in the top chip substrate;

wherein the step of “forming a pad pin in the top chip substrate” comprises:

thinning the back side of the top chip substrate;

forming a via penetrating through the top chip substrate;

forming a protective layer on the back side of the top chip substrate, and sidewalls and a bottom of the via; and

forming a pad pin on the protective layer on the bottom of the via.

2 . The method according to claim 1 , wherein the step of “forming, on a back side of the first substrate, a first interconnection layer comprising a first interconnection layer-bonding pad” comprises:

thinning the back side of the first substrate; and

forming the first interconnection layer on the back surface of the first substrate, wherein the first interconnection layer-bonding pad is formed in the first interconnection layer.

3 . The method according to claim 1 , wherein after the step of “bonding the front side of the second wafer to the first interconnection layer”, and before the step of “flipping the bonding structure”, the method further comprises:

forming, on the back side of the second substrate, a second interconnection layer comprising a second interconnection layer-bonding pad;

providing a third wafer, wherein the third wafer comprises a third substrate, and a third device and a third bonding pad that are disposed on a front side of the third substrate; and

bonding a front side of the third wafer to the second interconnection layer, and electrically connecting the second interconnection layer-bonding pad to the third bonding pad so that the third wafer is bonded to the second wafer in which the front side of the third wafer faces downwards.

4 . The method according to claim 1 , wherein the top wafer further comprises a top chip conductive layer between the top chip substrate and the top chip bonding pad, and the top chip conductive layer is electrically connected to the top chip bonding pad and the pad pin, respectively;

the first wafer further comprises a first conductive layer between the first device and the first bonding pad, and the first conductive layer is electrically connected to the first device, the first bonding pad, and the first interconnection layer-bonding pad, respectively; and

the second wafer further comprises a second conductive layer between the second device and the second bonding pad, and the second conductive layer is electrically connected to the second device and the second bonding pad, respectively.

5 . The method according to claim 4 , wherein the top chip conductive layer comprises a top chip top conductive layer and a top chip bottom conductive layer that are electrically connected, the top chip top conductive layer is electrically connected to the top chip bonding pad, and the top chip bottom conductive layer is electrically connected to the pad pin;

the first conductive layer comprises a first top conductive layer and a first bottom conductive layer, the first top conductive layer is electrically connected to the first bonding pad, and the first bottom conductive layer is electrically connected to the first device and the first interconnection layer-bonding pad; and

the second conductive layer comprises a second top conductive layer and a second bottom conductive layer that are electrically connected, the second top conductive layer is electrically connected to the second bonding pad, and the second bottom conductive layer is electrically connected to the second device.

6 . The method according to claim 4 , wherein a material of the top chip conductive layer, the first interconnection layer-bonding pad, the first bonding pad, and the second bonding pad is copper, and a material of the first conductive layer, the second conductive layer, and the pad pin is aluminum.

7 . The method according to claim 1 , wherein the top wafer is a logic wafer, and the first wafer and the second wafer are memory wafers.

8 . A semiconductor device, wherein the semiconductor device is manufactured by the method according to claim 1 , and the semiconductor device comprises:

a first chip comprising a first substrate and a first device and a first bonding pad disposed on a front side of the first substrate;

a top chip disposed on a front side of the first chip, wherein the top chip comprises a top chip substrate and a top chip bonding pad disposed between the top chip substrate and the first chip, the top chip bonding pad is electrically connected to the first bonding pad, so that a front side of the top wafer is bonded face to face with the front side of the first wafer;

a pad pin disposed on a back side of the top chip;

a first interconnection layer on a back side of the first chip, wherein the first interconnection layer comprises a first interconnection layer-bonding pad; and

a second chip on a side of the first interconnection layer away from the first chip, wherein the second chip comprises a second substrate and a second device and a second bonding pad on a front side of the second substrate, and the second bonding pad is electrically connected to the first interconnection layer-bonding pad so that a front side of the second chip is bonded to the first interconnection layer.

9 . The method according to claim 1 , wherein the top wafer further comprises a top chip dielectric layer and a top chip bonding layer disposed on the top chip dielectric layer, and the top chip dielectric layer comprises a top chip insulating layer, a top chip barrier layer, and an top chip interlayer dielectric layer that are disposed in sequence.

10 . The method according to claim 9 , wherein the top chip bonding pad longitudinally penetrates through the top chip bonding layer, the top chip interlayer dielectric layer and the top chip barrier layer.

11 . The method according to claim 10 , wherein a top chip conductive layer is disposed in the top chip insulating layer, and a thickness of the top chip conductive layer is less that of the top chip insulating layer.

12 . The method according to claim 11 , wherein the top chip bonding pad is electrically connected to the top chip conductive layer.

13 . The method according to claim 9 , wherein a material of the top chip bonding layer is silicon oxide, silicon nitride, or silicon carbonitride.

14 . A semiconductor device comprising:

a first chip comprising a first substrate and a first device and a first bonding pad disposed on a front side of the first substrate;

a top chip disposed on a front side of the first chip, wherein the top chip comprises a top chip substrate and a top chip bonding pad disposed between the top chip substrate and the first chip, the top chip bonding pad is electrically connected to the first bonding pad, so that a front side of the top wafer is bonded face to face with the front side of the first wafer;

a pad pin disposed on a back side of the top chip;

a first interconnection layer on a back side of the first chip, wherein the first interconnection layer comprises a first interconnection layer-bonding pad; and

a second chip on a side of the first interconnection layer away from the first chip, wherein the second chip comprises a second substrate and a second device and a second bonding pad on a front side of the second substrate, and the second bonding pad is electrically connected to the first interconnection layer-bonding pad so that a front side of the second chip is bonded to the first interconnection layer;

wherein the semiconductor device further comprises a via penetrating through the top chip substrate, and a protective layer at least formed on sidewalls and a bottom of the via that disposed in the top chip substrate, and the pad pin is formed on the protective layer at the bottom of the via to be separated from the top chip substrate.

15 . The semiconductor device according to claim 14 , wherein the semiconductor device further comprises a second interconnect layer disposed on a back side of the second chip, wherein the second interconnect layer comprises a second interconnection layer-bonding pad; and

a third chip disposed at the second interconnect layer away from the second chip, wherein the third chip comprises a third substrate and a third device and a third bonding pad disposed on a front side of the third substrate, and the third bonding pad is electrically connected to the second interconnection layer-bonding pad so that a front side of the third chip is bonded to the second interconnection layer.

16 . The semiconductor device according to claim 14 , wherein the top wafer further comprises a top chip conductive layer between the top chip substrate and the top chip bonding pad, and the top chip conductive layer is electrically connected to the top chip bonding pad and the pad pin, respectively;

the first chip further comprises a first conductive layer between the first device and the first bonding pad, and the first conductive layer is electrically connected to the first device, the first bonding pad, and the first interconnection layer-bonding pad, respectively; and

the second chip further comprises a second conductive layer between the second device and the second bonding pad, and the second conductive layer is electrically connected to the second device and the second bonding pad, respectively.

17 . The semiconductor device according to claim 16 , wherein the top chip conductive layer comprises a top chip top conductive layer and a top chip bottom conductive layer that are electrically connected, the top chip top conductive layer is electrically connected to the top chip bonding pad, and the top chip bottom conductive layer is electrically connected to the pad pin;

the first conductive layer comprises a first top conductive layer and a first bottom conductive layer, the first top conductive layer is electrically connected to the first bonding pad, and the first bottom conductive layer is electrically connected to the first device and the first interconnection layer-bonding pad; and

the second conductive layer comprises a second top conductive layer and a second bottom conductive layer, the second top conductive layer is electrically connected to the second bonding pad, and the second bottom conductive layer is electrically connected to the second device.

18 . The semiconductor device according to claim 14 , wherein a material of the top chip conductive layer, the first interconnection layer-bonding pad, the first bonding pad, and the second bonding pad is copper, and a material of the first conductive layer, the second conductive layer, and the pad pin is aluminum.

19 . The semiconductor device according to claim 14 , wherein the top chip is a logic chip, and the first chip and the second chip are memory chips.

20 . The semiconductor device according to claim 14 , wherein the front side of the first chip faces towards a direction the same as that of the second chip, and the front side of the top chip faces towards a direction opposite to the front side of the first chip.