Light emitting diode structure including front side electrodes connected to metal interconnects and method of manufacturing the same
A light-emitting diode (LED) structure is provided in the present invention, including a substrate, a dielectric layer on the substrate, metal interconnects in the dielectric layer, LED dies on the dielectric layer, wherein each LED die is provided with a front side and a back side, the back side is bonded with the dielectric layer, and the cathode and anode are on the front side of LED die, and bonding lines connecting the cathode and anode on the front side of LED die to the metal interconnects respectively.
1 . A light-emitting diode (LED) structure, comprising:
a substrate;
a first dielectric layer on said substrate;
metal interconnects in said first dielectric layer;
multiple LED dies, wherein each said LED die is provided with a front surface and a back surface, and a cathode and an anode of each said LED die are on said front surface, and said anode and said cathode are respectively in a top layer and a bottom layer of said LED die, said back surface is a surface of said bottom layer bonded on said first dielectric layer, and said cathode extends in a horizontal direction parallel to said front surface beyond said anode to form a contact area;
a second dielectric layer on said front surface and sidewalls of said LED dies; and
conductive lines connecting said cathode and said anode of said LED die respectively to said metal interconnects, and one of said conductive lines is electrically connected to said cathode through said contact area, wherein said conductive lines are conformally formed on said second dielectric layer.
2 . The light-emitting diode (LED) structure of claim 1 , further comprising a quantum dot right on each said LED die, wherein each said quantum dot portion is surrounded by a metal grid.
3 . The light-emitting diode (LED) structure of claim 1 , wherein a third dielectric layer is surrounded said LED dies on said first dielectric layer and fills up spaces between said LED dies, and said conductive lines are formed in said third dielectric layer.
4 . The light-emitting diode (LED) structure of claim 1 , further comprising a bonding layer between said first dielectric layer and said LED dies.
5 . The light-emitting diode (LED) structure of claim 1 , wherein said LED dies are arranged on said substrate in a standard array or in a staggered array.
6 . The light-emitting diode (LED) structure of claim 1 , wherein a memory region and a logic region are defined on said substrate, and said LED structure further comprises static random access memory (SRAM) and Flash memory on said memory region of said substrate and LED drivers on said logic region.
7 . The light-emitting diode (LED) structure of claim 1 , wherein said LED die is Micro LED die.