Semiconductor device and equipment
Embodiments of the present disclosure provide a technique advantageous to an improvement in performance of a semiconductor device. The semiconductor device includes a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, and a thin film transistor electrically connected to the first semiconductor element without an intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer and electrically connected to the second semiconductor element without an intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.
1 . A semiconductor device comprising:
a first monocrystalline semiconductor layer on which a first semiconductor element is arranged;
a second monocrystalline semiconductor layer on which a second semiconductor element is arranged; and
a thin film transistor electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer,
wherein the thin film transistor includes an oxide semiconductor layer.
2 . The semiconductor device according to claim 1 , wherein the thin film transistor includes at least one of the following: a non-crystalline semiconductor layer, and a polycrystalline semiconductor layer.
3 . The semiconductor device according to claim 2 , wherein the thin film transistor is arranged between the first monocrystalline semiconductor layer and the second monocrystalline semiconductor layer.
4 . The semiconductor device according to claim 1 , wherein the first monocrystalline semiconductor layer and the second monocrystalline semiconductor layer are stacked on each other.
5 . The semiconductor device according to claim 1 , wherein the thin film transistor is connected to power supply wiring.
6 . The semiconductor device according to claim 1 , wherein the thin film transistor is connected to a capacitor.
7 . The semiconductor device according to claim 1 , further comprising:
a first wiring structure arranged on an upper side of the first monocrystalline semiconductor layer; and
a second wiring structure arranged on an upper side of the second monocrystalline semiconductor layer,
wherein the first wiring structure and the second wiring structure are bonded by hybrid bonding, and
wherein the thin film transistor is arranged in the second wiring structure.
8 . The semiconductor device according to claim 1 , wherein the first semiconductor element is a metal-oxide semiconductor field-effect transistor (MOSFET).
9 . The semiconductor device according to claim 1 , wherein the first semiconductor element is a diode or a transistor.
10 . The semiconductor device according to claim 9 , wherein the second semiconductor element is a diode or a transistor.
11 . The semiconductor device according to claim 10 , wherein the second semiconductor element is a MOSFET.
12 . The semiconductor device according to claim 1 , wherein a material of the oxide semiconductor layer is indium gallium oxide (In—Ga—O), indium gallium zinc oxide (In—Ga—Zn—O), indium tin zinc oxide (In—Sn—Zn-—), or indium gallium zinc tin oxide (In—Ga—Zn—Sn—O).
13 . A semiconductor device comprising:
a first monocrystalline semiconductor layer on which a first semiconductor element is arranged;
a second monocrystalline semiconductor layer on which a second semiconductor element is arranged; and
a thin film transistor electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer,
wherein a current pathway continues from the thin film transistor to the first semiconductor element, and a current pathway continues from the thin film transistor to the second semiconductor element.
14 . The semiconductor device according to claim 13 , wherein the thin film transistor includes an oxide semiconductor layer.
15 . A semiconductor device comprising:
a circuit board including a substrate and a wiring structure arranged on an upper side of the substrate;
a first semiconductor chip including a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, the first semiconductor chip being arranged on an upper side of the circuit board; and
a second semiconductor chip including a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, the semiconductor chip being arranged on the upper side of the circuit board,
wherein the circuit board includes a thin film transistor arranged on the upper side of the substrate, and
wherein the thin film transistor is electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.
16 . The semiconductor device according to claim 15 , wherein the circuit board is arranged between the first semiconductor chip and the second semiconductor chip.
17 . The semiconductor device according to claim 15 , wherein the thin film transistor includes an oxide semiconductor layer.
18 . Equipment comprising:
the semiconductor device according to claim 13 ; and
at least one of an imaging device, a display device, a processing device, an electromechanical device, a control device, a storage device, a power supply device, or a communication device.
19 . Equipment comprising:
a first monocrystalline semiconductor layer on which a first semiconductor element is arranged;
a second monocrystalline semiconductor layer on which a second semiconductor element is arranged;
a thin film transistor electrically connected to the first semiconductor element without intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer, and electrically connected to the second semiconductor element without intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer, wherein the thin film transistor includes an oxide semiconductor layer; and
at least one of an imaging device, a display device, a processing device, an electromechanical device, a control device, a storage device, a power supply device, or a communication device.
20 . A semiconductor device comprising:
a monocrystalline semiconductor layer on which a semiconductor element is arranged;
a wiring structure connected to the semiconductor element, the wiring structure being arranged on a first side of the monocrystalline semiconductor layer;
a through electrode penetrating through the monocrystalline semiconductor layer; and
a thin film transistor arranged on a second side of the monocrystalline semiconductor layer, the second side being opposite to the first side on which the wiring structure is arranged,
wherein the semiconductor element and the thin film transistor are electrically connected via the wiring structure and the through electrode.
21 . The semiconductor device according to claim 20 , wherein the semiconductor element is a MOSFET.
22 . The semiconductor device according to claim 21 , wherein the semiconductor element is a fin field-effect transistor (FinFET).
23 . The semiconductor device according to claim 20 , wherein the thin film transistor is connected to power supply wiring.
24 . The semiconductor device according to claim 20 , wherein the thin film transistor includes an oxide semiconductor layer.
25 . Equipment comprising:
a monocrystalline semiconductor layer on which a semiconductor element is arranged;
a wiring structure connected to the semiconductor element, the wiring structure being arranged on a first side of the monocrystalline semiconductor layer;
a through electrode penetrating through the monocrystalline semiconductor layer;
a thin film transistor arranged on a second side of the monocrystalline semiconductor layer, the second side being opposite to the first side on which the wiring structure is arranged, wherein the semiconductor element and the thin film transistor are electrically connected via the wiring structure and the through electrode; and
at least one of an imaging device, a display device, a processing device, an electromechanical device, a control device, a storage device, a power supply device, or a communication device.