Acoustic transducer with improved low-frequency response

1 . A microelectromechanical (MEMS) transducer, comprising:

a substrate;

a first cantilevered beam comprising a first protrusion and a first piezoelectric structure, wherein the first piezoelectric structure comprises a first deflection end and a first fixed end, wherein the first fixed end is coupled to the substrate, and wherein the first deflection end is cantilevered away from the substrate; and

a second cantilevered beam comprising a second protrusion and a second piezoelectric structure, wherein the second piezoelectric structure comprises a second deflection end and a second fixed end, wherein the second fixed end is coupled to the substrate, and wherein the second deflection end is cantilevered away from the substrate;

wherein the first cantilevered beam is separated from the second cantilevered beam by a gap;

wherein the first protrusion is disposed at the first deflection end and increases a thickness of the first cantilevered beam along the gap at the first deflection end;

wherein the second protrusion is disposed at the second deflection end and increases a thickness of the second cantilevered beam along the gap at the second deflection end,

wherein the first protrusion covers an outline of a surface of the first piezoelectric structure at the first deflection end of the first piezoelectric structure, and

wherein the first protrusion and the second protrusion comprise an inorganic thin-film material to add rigidity.

2 . The MEMS transducer of claim 1 , wherein:

the first piezoelectric structure is disposed in a plane of a piezoelectric layer and configured to deflect away from the plane of the piezoelectric layer at the first deflection end in response to acoustic vibrations on the first cantilevered beam; and

the second piezoelectric structure is disposed in the plane of the piezoelectric layer and configured to deflect away from the plane of the piezoelectric layer at the second deflection end in response to the acoustic vibrations on the second cantilevered beam.

3 . The MEMS transducer of claim 1 , further comprising an acoustic port configured to provide an acoustic path from outside the MEMS transducer to the first cantilevered beam and the second cantilevered beam.

4 . The MEMS transducer of claim 3 , wherein the first protrusion is disposed on a top surface of the first piezoelectric structure parallel to a plane of a piezoelectric layer on an opposite side of the plane of the piezoelectric layer from the acoustic port.

5 . The MEMS transducer of claim 4 , wherein the first protrusion extends less than one third of a distance from the first deflection end toward the substrate.

6 . The MEMS transducer of claim 1 , wherein the first deflection end of the piezoelectric structure comprises the first protrusion formed along the outline of the first deflection end and a center region disposed between the outline having a different thickness than the first protrusion.

7 . The MEMS transducer of claim 1 , wherein the first cantilevered beam further comprises:

a first electrode layer disposed on a top surface of the first fixed end of the first piezoelectric structure; and

a second electrode layer disposed on a bottom surface of the first fixed end of the first piezoelectric structure, wherein the bottom surface is parallel to the top surface of the first fixed end of the first piezoelectric structure on an opposite side of the first piezoelectric structure.

8 . The MEMS transducer of claim 7 , wherein the first electrode layer and the second electrode layer extends less than two-thirds of a distance from the first fixed end toward the first deflection end.

9 . The MEMS transducer of claim 3 , wherein the first protrusion is disposed on a bottom surface of the first piezoelectric structure parallel to a plane of a piezoelectric layer on a same side of the plane as the acoustic port, and wherein the first piezoelectric structure is fabricated in the plane of the piezoelectric layer.

10 . The MEMS transducer of claim 1 , further comprising:

a third cantilevered beam comprising a third protrusion and a third piezoelectric structure, wherein the third piezoelectric structure comprises a third deflection end and a third fixed end, wherein the third fixed end is coupled to the substrate, wherein the third deflection end is cantilevered away from the substrate;

wherein the gap has an initial gap distance between the first fixed end and the second fixed end, and wherein the gap has a gap distance that varies based on a length along the gap away from the substrate;

wherein the first cantilevered beam is separated from the third cantilevered beam by a second gap, wherein the second gap has the initial gap distance between the first fixed end and the third fixed end, and wherein the second gap has a second gap distance that varies based on a second length along the second gap away from the substrate, a deflection position of the first cantilevered beam, and a deflection position of the third cantilevered beam; and

wherein the first protrusion further increases the thickness of the first cantilevered beam along the second gap at the first deflection end.

11 . The MEMS transducer of claim 10 , wherein the first protrusion is disposed on a top surface of the first piezoelectric structure at positions less than a threshold distance from the gap or the second gap.

12 . The MEMS transducer of claim 1 , further comprising a plurality of cantilevered beams, each comprising a corresponding protrusion and a corresponding piezoelectric structure, wherein each corresponding piezoelectric structure comprises a corresponding deflection end and a corresponding fixed end, wherein each of the plurality of cantilevered beams is separated from a first adjacent cantilevered beam by a first corresponding gap and a second adjacent cantilevered beam by a second corresponding gap.

13 . The MEMS transducer of claim 12 wherein the plurality of cantilevered beams and associated gaps between the plurality of cantilevered beams enclose a symmetrical polygonal shape.

14 . The MEMS transducer of claim 13 , wherein each corresponding piezoelectric structure has a same triangular shape in a shared piezoelectric layer.

15 . The MEMS transducer of claim 13 , further comprising an acoustic port that provides an acoustic path for sound from outside the MEMS transducer to travel to the plurality of cantilevered beams.

16 . The MEMS transducer of claim 15 , further comprising a pocket on an opposite side of the plurality of cantilevered beams from the acoustic port, wherein a pressure differential between a pressure of the pocket and a pressure of the acoustic port causes deflections of the plurality of cantilevered beams and an associated generation of electrical signals.

17 . The MEMS transducer of claim 1 , wherein the gap has an initial gap distance between the first fixed end and the second fixed end, and wherein the gap has a gap distance that varies based on a length along the gap away from a top surface of the substrate;

wherein the initial gap distance is approximately one micrometer (um), and wherein the gap distance at a tip of the first deflection end is approximately 15 um.

18 . The MEMS transducer of claim 1 , wherein a thickness of the first protrusion and a thickness of the second protrusion is based on a variation in deflection mismatches between positions of the first deflection end and the second deflection end determined from manufacturing variations and material stress of a MEMS transducer design for the MEMS transducer.

19 . The MEMS transducer of claim 1 , wherein the first cantilevered beam and the second cantilevered beam each comprise electrode layers, the MEMS transducer further comprising control circuitry coupled to the electrode layers and configured to process acoustic signal from acoustic deflections in the first cantilevered beam and the second cantilevered beam.

20 . A microelectromechanical (MEMS) transducer, comprising:

a substrate;

a first cantilevered beam comprising a first protrusion and a first piezoelectric structure, wherein the first piezoelectric structure comprises a top surface, a bottom surface, a first side, a first end coupled to the substrate, and a second end cantilevered away from the substrate and the first end; and

a second cantilevered beam comprising a second protrusion and a second piezoelectric structure, wherein the second piezoelectric structure comprises a top surface, a bottom surface, a first side, a first end coupled to the substrate and a second end cantilevered away from the substrate and the first end;

wherein the first cantilevered beam is positioned adjacent to the second cantilevered beam separated by a gap between the first side of the first piezoelectric structure and the first side of the second piezoelectric structure, with a corner of the first end of the first cantilevered beam coupled to the substrate separated from a corner of the first end of the second cantilevered beam coupled to the substrate by an initial gap distance,

wherein the first side of the first piezoelectric structure and the first side of the second piezoelectric structure are separated by a gap distance;

wherein the first protrusion is positioned on the top surface or the bottom surface of the first piezoelectric structure at the second end of the first piezoelectric structure along a top first side edge of the first cantilevered beam along the gap; and

wherein the second protrusion is positioned on the top surface or the bottom surface at the second end of the second piezoelectric structure along a top first side edge of the second cantilevered beam along the gap,

wherein the first protrusion covers an outline of a surface of the first piezoelectric structure at a first deflection end of the first piezoelectric structure, and

wherein the first protrusion and the second protrusion comprise an inorganic thin-film material to add rigidity.

21 . The MEMS transducer of claim 20 , further comprising:

a third cantilevered beam comprising a third protrusion and a third piezoelectric structure;

wherein the third piezoelectric structure comprises a top surface, a bottom surface, a first side, a first end coupled to the substrate, and a second end cantilevered away from the substrate and the first end;

wherein the second end of the third cantilevered beam is cantilevered away from the substrate and configured to deflect out of a piezoelectric layer plane in response to acoustic pressure;

wherein the first cantilevered beam is positioned adjacent to the third cantilevered beam separated by a gap between a second side of the first piezoelectric structure and the first side of the third piezoelectric structure, with a second corner of the first end of the first cantilevered beam coupled to the substrate separated from a corner of the first end of the third cantilevered beam coupled to the substrate by a second initial gap distance.

22 . The MEMS transducer of claim 20 , further comprising a plurality of cantilevered beams, each comprising a corresponding protrusion and a corresponding piezoelectric structure, wherein each corresponding piezoelectric structure comprises a corresponding second end cantilevered away from the substrate and a corresponding first end attached to the substrate, wherein each of the plurality of cantilevered beams is separated from a first adjacent cantilevered beam by a first corresponding gap and a second adjacent cantilevered beam by a second corresponding gap, wherein the plurality of cantilevered beams and associated gaps between the plurality of cantilevered beams enclose a symmetrical polygonal shape, wherein each corresponding piezoelectric structure has a same triangular shape in a shared piezoelectric layer.