Atomic-smooth device with microstructure, and method for preparing same
Provided is an atomic-smooth device with a microstructure. The device includes, from the bottom to top, a substrate, a bonding material, a second dielectric layer on the substrate, the microstructure, and a first dielectric layer, where a surface of the first dielectric layer is an atomic-smooth surface. Further provided is a method for preparing an atomic-smooth device with a microstructure to effectively avoid pits or burrs generated when the existing microstructure is machined.
1 . A method for preparing an atomic-smooth device with a microstructure, wherein the atomic-smooth device with the microstructure comprises a substrate, a bonding material, a second dielectric layer on the substrate, the microstructure, and a first dielectric layer in sequence, wherein a surface of the first dielectric layer is an atomic-smooth surface,
the method comprises:
in step 1, growing the first dielectric layer on a surface of a two-dimensional material to obtain an atomic-smooth film, wherein the two-dimensional material is graphene or highly oriented pyrolytic graphite (HOPG);
in step 2, preparing the microstructure on a surface of the first dielectric layer facing away from the two-dimensional material by micromachining;
in step 3, growing the second dielectric layer on a surface of the microstructure facing away from the first dielectric layer;
in step 4, coating the bonding material on the second dielectric layer;
in step 5, connecting the second dielectric layer to the substrate through the bonding material;
in step 6, peeling off the two-dimensional material to obtain a structure having a small amount of residual two-dimensional material, the first dielectric layer, the microstructure, the second dielectric layer, and the bonding material;
in step 7, removing the small amount of residual two-dimensional material on the structure by oxygen plasma etching; and
in step 8, obtaining the atomic-smooth device with the microstructure.
2 . The method of claim 1 , wherein
both the first dielectric layer and the second dielectric layer are insulating layers.
3 . The method of claim 1 , wherein
the microstructure is a metal electrode, and
the metal electrode has a thickness of 10 to 150 nm.
4 . The method of claim 1 , wherein the bonding material is selected from at least one of ultraviolet (UV)-curable glue or resin.
5 . The method of claim 1 , wherein the substrate is selected from one or a combination of Silicon (Si), Silicon Carbide (SiC), Silicon-On-Insulator (SOI), sapphire, mica, graphene, or molybdenum disulfide.
6 . The method of claim 1 , wherein the atomic-smooth film has a diameter of 1 μm to 100 μm.
7 . The method of claim 2 , wherein the first dielectric layer and the second dielectric layer are silicon oxide layers and are prepared by deposition.
8 . The method of claim 3 , wherein the microstructure is Aurum (Au), Cuprum (Cu), or Argentum (Ag).
9 . The method of claim 3 , wherein the metal electrode has a thickness of 20 to 50 nm.
10 . The method of claim 1 , wherein a projection of the first dielectric layer on the two-dimensional material covers a projection of the second dielectric layer on the two-dimensional material.