IP Library Granted Patent US 12673867
Granted Patent B2
US 12673867 · App. 18/427,393 · Granted Jul 7, 2026

Hydride ion conductor

Inventors: Takeya Mezaki (Tokyo, JP); Yoshitake Toda (Tokyo, JP); Kohta Yamada (Tokyo, JP); Naoki Matsui (Tokyo, JP); Guangzhong Jiang (Tokyo, JP); Ryoji Kanno (Tokyo, JP)
Assignees: AGC INC.; Tokyo Institute of Technology
C01B6/246C01B6/24C01F11/22H01M8/1016C01P2002/50C01P2002/72C01P2002/77C01P2002/88C01P2006/40H01M10/0562H01M2300/0068H01M2300/008
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Quick Facts
Patent No.
US 12673867
App. No.
18/427,393
Granted
Jul 7, 2026
Kind
B2
Abstract

A hydride ion conductor is represented by: MAMBH 4-x F x   Formula (1), where MA is selected from the group consisting of Ca, Sr, and Ba, MB is selected from the group consisting of Mg and Ca, and is different from MA, and x is 0<x<4.

Claims (13)

1 . A hydride ion conductor, wherein

the hydride ion conductor is represented by:

MAMBH 4-x F x   Formula (1), where

MA is selected from the group consisting of Ca, Sr, and Ba,

MB is selected from the group consisting of Mg and Ca, and is different from MA, and

x is 0<x<4.

2 . The hydride ion conductor according to claim 1 , wherein

the hydride ion conductor has a BaZnF 4 -type structure, and

conductivity at 300° C. of the hydride ion conductor is 10 −5 S/cm or higher.

3 . The hydride ion conductor according to claim 1 , wherein

MAMBH 4-x F x of Formula (1) is SrMgH 4-x F x or BaMgH 4-x F x , where x is 0<x<4.

4 . The hydride ion conductor according to claim 2 , wherein

MAMBH 4-x F x of Formula (1) is SrMgH 4-x F x or BaMgH 4-x F x , where x is 0<x<4.