Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

1 . A chemical deposition method for a ruthenium thin film or a ruthenium compound thin film, comprising vaporizing a raw material to obtain a raw material gas, and introducing a reaction gas and the raw material gas together onto a substrate surface, while heating the raw material gas and the reaction gas,

wherein the raw material comprises

an organoruthenium compound represented by the following Formula 1, in which a trimethylenemethane-based ligand (L 1 ), and two carbonyl ligands and a ligand X coordinate to divalent ruthenium:

RuL 1 (CO) 2 X  [Formula 1]

wherein the trimethylenemethane-based ligand (L 1 ) is represented by the following Formula 2, and the ligand X is any one of an isocyanide ligand (L 2 ), a pyridine ligand (L 3 ), an amine ligand (L 4 ), an imidazole ligand (L 5 ), a pyridazine ligand (L 6 ), a pyrimidine ligand (L 7 ), and a pyrazine ligand (L 8 ) represented by the following Formula 3 to Formula 7:

wherein a substituent R of the ligand L 1 is any one of hydrogen, a linear or branched alkyl group having 1 to 8 carbon atoms, a cyclic alkyl group having 3 to 9 carbon atoms, a linear or branched alkenyl group having 2 to 8 carbon atoms, a linear or branched amino group;

wherein a substituent R 1 of the ligand L 2 is any one of hydrogen, a linear or branched alkyl group having 1 to 8 carbon atoms;

wherein each of substituents R 2 to R 6 of the ligand L 3 is any one of hydrogen, a linear or branched alkyl group having 1 to 5 carbon atoms;

wherein each of substituents R 7 to R 9 of the ligand L 4 is a linear or branched alkyl group having 1 to 5 carbon atoms;

wherein a substituent R 10 of the ligand L 5 is any one of hydrogen, a linear or branched alkyl group having 1 to 8 carbon atoms;

wherein each of substituents R 14 to R 17 of the ligand L 6 is any one of hydrogen, a linear or branched alkyl group having 1 to 5 carbon atomss;

wherein each of substituents R 18 to R 21 of the ligand L 7 is any one of hydrogen, a linear or branched alkyl group having 1 to 5 carbon atoms; and

wherein each of substituents R 22 to R 25 of the ligand Lg is any one of hydrogen, a linear or branched alkyl group having 1 to 5 carbon atoms.

2 . The chemical deposition method according to claim 1 , wherein

the reaction gas is a reducing gas.

3 . The chemical deposition method according to claim 2 , wherein the reducing gas is a gas of any one selected from the group consisting of hydrogen, ammonia, hydrazine, formic acid, and an alcohol.

4 . The chemical deposition method according to claim 1 , wherein

the reaction gas is either of an oxidizing gas and a gas of an oxygen-containing reactant.

5 . The chemical deposition method according to claim 4 , wherein the oxidizing gas is a gas of any one of oxygen and ozone, and the gas of an oxygen-containing reactant is a gas of any one of water and an alcohol.

6 . The chemical deposition method according to claim 1 , wherein the heating is performed at a film forming temperature is within a range from 150° C. to 350° C.

7 . The chemical deposition method according to claim 2 , wherein the heating is performed at a film forming temperature within a range from 150° C. to 350° C.

8 . The chemical deposition method according to claim 3 , wherein the heating is performed at a film forming temperature within a range from 150° C. to 350° C.

9 . The chemical deposition method according to claim 1 ,

wherein the substituent R of the trimethylenemethane-based ligand (L 1 ) is any one of hydrogen, a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a n-pentyl group, an isopentyl group, and a neopentyl group.

10 . The chemical deposition method according to claim 1 ,

wherein the ligand X is the isocyanide ligand (L 2 ), and

R 1 is any one of a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.

11 . The chemical deposition method according to claim 1 ,

wherein ligand X is the pyridine ligand (L 3 ), and

all of R 2 to R 6 are hydrogen,

all of R 2 , R 4 and R 6 are methyl groups, and R 3 and R 5 are hydrogen, or

all of R 2 , R 3 , R 5 and R 6 are hydrogen, and R 4 is any one of a methyl group, an ethyl group, an isopropyl group, and a tert-butyl group.

12 . The chemical deposition method according to claim 1 ,

wherein the ligand X is the amine ligand (L 4 ), and

all of R 7 to R 9 are any one of a methyl group, an ethyl group, a n-propyl group, an isopropyl group, and a n-butyl group, or

both R 7 and R 8 are any one of a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, and a tert-butyl group, and R 9 is hydrogen.

13 . The chemical deposition method according to claim 1 ,

wherein the ligand X is the imidazole ligand (L 5 ), and

all of R 10 to R 13 are hydrogen,

R 10 is any one of a methyl group, an ethyl group, an isopropyl group, and a tert-butyl group, and R 11 to R 13 are any one of hydrogen, a methyl group and an ethyl group, or

R 10 is any one of a methyl group, an ethyl group, an isopropyl group, and a tert-butyl group, and all of R 11 to R 13 are any one of hydrogen, a methyl group, and an ethyl group.