Hollow resin particles used in resin composition for semiconductor member
There is provided hollow resin particles used in a resin composition for semiconductor members, which can be used in a resin composition for semiconductor members to provide a semiconductor member capable of exerting excellent low dielectric properties. The hollow resin particles used in a resin composition for semiconductor members according to an embodiment of the present invention are hollow resin particles having a hole part inside the particle, wherein a decreasing rate of a relative dielectric constant Dk 1 of a film (F 1 ) formulated with 80 parts by weight of polyimide and 20 parts by weight of the hollow resin particles to a relative dielectric constant Dk 0 of a film (F 0 ) formed with only the polyimide is 3% or more.
1 . Hollow resin particles used in a resin composition for semiconductor members, having a hole part inside the particle,
wherein a decreasing rate of a relative dielectric constant Dk 1 of a film (F 1 ) formulated with 80 parts by weight of polyimide and 20 parts by weight of the hollow resin particles to a relative dielectric constant Dk 0 of a film (F 0 ) formed with only the polyimide is 3% or more, and
wherein a bulk specific gravity of the hollow resin particles is 0.01 g/cm 3 to 0.6 g/cm 3 .
2 . The hollow resin particles used in a resin composition for semiconductor members according to claim 1 , wherein a decreasing rate of a dielectric loss tangent Df 1 of the film (F 1 ) to a dielectric loss tangent Df 0 of the film (F 0 ) is 3% or more.
3 . The hollow resin particles used in a resin composition for semiconductor members according to claim 1 , wherein the hollow resin particles have a volume average particle diameter of 0.5 μm to 100 μm.
4 . The hollow resin particles used in a resin composition for semiconductor members according to claim 1 , wherein the hollow resin particles include a polymer (P) that contains at least one selected from the group consisting of a vinyl-based monomer-derived structural unit (I) and a phosphoric acid ester-based monomer-derived structural unit (II).
5 . The hollow resin particles used in a resin composition for semiconductor members according to claim 4 , wherein the phosphoric acid ester-based monomer-derived structural unit (II) has an ethylene-based unsaturated group.
6 . The hollow resin particles used in a resin composition for semiconductor members according to claim 4 , wherein the phosphoric acid ester-based monomer is represented by formula (1):
wherein in formula (1), R 1 is a (meth)acryl group or an allyl group, R 2 is a linear or branched alkylene group, m is an integer of 1 to 30, n is 0 or 1, v is an integer of 1 to 10, and x is 1 or 2.
7 . The hollow resin particles used in a resin composition for semiconductor members according to claim 1 , wherein a specific surface area is 1 m 2 /g to 30 m 2 /g.
8 . The hollow resin particles used in a resin composition for semiconductor members according to claim 1 , wherein the hole part inside the particle has a porous structure.
9 . The hollow resin particles used in a resin composition for semiconductor members according to claim 1 , wherein the hole part inside the particle has a single hollow structure.
10 . A semiconductor member comprising the hollow resin particles used in a resin composition for semiconductor members according to claim 1 .