IP Library › Granted Patent US 12674116
Granted Patent B2
US 12674116 · App. 18/492,224 · Granted Jul 7, 2026

Cleaning composition, cleaning method of semiconductor substrate, and manufacturing method of semiconductor element

Inventors: Naotsugu Muro (Haibara-gun, JP); Tadashi Inaba (Haibara-gun, JP); Tetsuya Kamimura (Haibara-gun, JP)
Assignee: FUJIFILM Corporation
C11D3/2082C11D1/12C11D3/3409C11D3/361C11D2111/22
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Quick Facts
Patent No.
US 12674116
App. No.
18/492,224
Granted
Jul 7, 2026
Kind
B2
Abstract

An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.

Claims (49)

1 . A cleaning composition comprising:

citric acid;

1-hydroxyethane-1,1-diphosphonic acid;

a sulfonic acid-based surfactant; and

water,

wherein a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150,

a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500,

a pH is 0.10 to 4.00, and

the cleaning composition comprises no organic particles.

2 . The cleaning composition according to claim 1 ,

wherein the sulfonic acid-based surfactant comprises an alkylbenzene sulfonic acid-based surfactant.

3 . The cleaning composition according to claim 2 ,

wherein the alkylbenzene sulfonic acid-based surfactant comprises an alkylbenzene sulfonic acid-based surfactant having an alkyl group having 8 or more carbon atoms.

4 . The cleaning composition according to claim 2 ,

wherein the alkylbenzene sulfonic acid-based surfactant comprises an alkylbenzene sulfonic acid-based surfactant having an alkyl group having 10 to 13 carbon atoms.

5 . The cleaning composition according to claim 1 ,

wherein the sulfonic acid-based surfactant comprises

an alkylbenzene sulfonic acid-based surfactant 1 comprising an alkyl group having 10 carbon atoms,

an alkylbenzene sulfonic acid-based surfactant 2 comprising an alkyl group having 11 carbon atoms,

an alkylbenzene sulfonic acid-based surfactant 3 comprising an alkyl group having 12 carbon atoms, and

an alkylbenzene sulfonic acid-based surfactant 4 comprising an alkyl group having 13 carbon atoms.

6 . The cleaning composition according to claim 5 ,

wherein a content of the alkylbenzene sulfonic acid-based surfactant 2 with respect to a total mass of the alkylbenzene sulfonic acid-based surfactants 1 to 4 is 20% to 50% by mass.

7 . The cleaning composition according to claim 1 ,

wherein the mass ratio of the content of the citric acid to the content of the 1-hydroxyethane-1,1-diphosphonic acid is 30 to 100.

8 . The cleaning composition according to claim 1 ,

wherein the mass ratio of the content of the citric acid to the content of the 1-hydroxyethane-1,1-diphosphonic acid is 40 to 80.

9 . The cleaning composition according to claim 1 ,

wherein the mass ratio of the content of the citric acid to the content of the 1-hydroxyethane-1,1-diphosphonic acid is 50 to 60.

10 . The cleaning composition according to claim 1 ,

wherein the mass ratio of the content of the citric acid to the content of the sulfonic acid-based surfactant is 200 to 600.

11 . The cleaning composition according to claim 1 ,

wherein the mass ratio of the content of the citric acid to the content of the sulfonic acid-based surfactant is 300 to 500.

12 . The cleaning composition according to claim 1 ,

wherein the mass ratio of the content of the citric acid to the content of the sulfonic acid-based surfactant is 410 to 440.

13 . The cleaning composition according to claim 1 ,

wherein the content of the citric acid with respect to a total mass of the cleaning composition is 0.1% to 35.0% by mass.

14 . The cleaning composition according to claim 1 ,

wherein the content of the citric acid with respect to a total mass of the cleaning composition is 1.0% to 35.0% by mass.

15 . The cleaning composition according to claim 1 ,

wherein the content of the citric acid with respect to a total mass of the cleaning composition is 20.0% to 35.0% by mass.

16 . A cleaning method of a semiconductor substrate, comprising:

contacting a semiconductor substrate with the cleaning composition according to claim 1 .

17 . A manufacturing method of a semiconductor element, comprising:

the cleaning method of a semiconductor substrate according to claim 16 .

18 . The cleaning composition according to claim 2 ,

wherein the mass ratio of the content of the citric acid to the content of the 1-hydroxyethane-1,1-diphosphonic acid is 30 to 100.

19 . The cleaning composition according to claim 1 ,

wherein an electrical conductivity of the cleaning composition is 0.05 to 11.0 mS/cm.