Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

1 . A substrate processing apparatus, comprising:

a process container in which a substrate to be processed is processed;

a support configured to support the substrate to be processed in the process container;

a gas flow controller configured to form a gas flow capable of making contact with the substrate to be processed in the process container;

a first actuator configured to allow the support to reciprocate in the process container;

a second actuator configured to allow the gas flow controller to reciprocate in the process container in a direction opposite to a moving direction of the support,

wherein each of the first actuator and the second actuator is fixed to a bottom of the process container; and

a controller configured to be capable of controlling the first actuator and the second actuator to:

(a) accelerate the support supporting the substrate to be processed and the gas flow controller, when the support supporting the substrate to be processed and the gas flow controller move toward each other during a first period in which the substrate to be processed that is supported by the support and the gas flow controller do not overlap with each other in a plane view;

(b) maintain a relative speed between the support supporting the substrate to be processed and the gas flow controller to be constant, during a second period in which the substrate to be processed that is supported by the support and the gas flow controller at least partially overlap with each other in the plane view, after (a); and

(c) decelerate the support supporting the substrate to be processed and the gas flow controller, when the support supporting the substrate to be processed and the gas flow controller move away from each other during the first period, after (b).

2 . The substrate processing apparatus of claim 1 , wherein the first actuator is configured to allow the support to reciprocate between one end side and the other end side in the process container, and

wherein the second actuator is configured to allow the gas flow controller to reciprocate between the other end side and the one end side in the process container.

3 . The substrate processing apparatus of claim 2 , wherein the first actuator and the second actuator are configured to locate the gas flow controller on the other end side when the support is located on the one end side, and locate the support on the other side when the gas flow controller is located on the one end side.

4 . The substrate processing apparatus of claim 2 , wherein the process container is configured such that a distance between one end side and the other end side in the process container is less than a sum of twice the diameter of the substrate to be processed and a moving-direction width of the gas flow controller, or less than a sum of twice the moving-direction width of the gas flow controller and the diameter of the substrate to be processed.

5 . The substrate processing apparatus of claim 1 , wherein the first actuator and the second actuator are configured to synchronize a timing of changing a mode of speed control on the support supporting the substrate to be processed and a timing of changing the mode of speed control on the gas flow controller.

6 . The substrate processing apparatus of claim 1 , wherein the first actuator and the second actuator are configured to move each of the support supporting the substrate to be processed and the gas flow controller at a constant speed during the second period.

7 . The substrate processing apparatus of claim 6 , wherein the first actuator and the second actuator are configured to make a moving speed of the support supporting the substrate to be processed equal to a moving speed of the gas flow controller during the second period.

8 . The substrate processing apparatus of claim 6 , wherein the first actuator and the second actuator are configured to make a moving speed of the support supporting the substrate to be processed different from a moving speed of the gas flow controller during the second period.

9 . The substrate processing apparatus of claim 1 , wherein the first actuator and the second actuator are configured to change the relative speed between the support supporting the substrate to be processed and the gas flow controller during the second period.

10 . The substrate processing apparatus of claim 1 , wherein the first actuator and the second actuator are configured to change the relative speed between the support supporting the substrate to be processed and the gas flow controller in a period of the second period in which a peripheral portion of the substrate to be processed that is supported by the support and the gas flow controller overlap with each other in the plane view and a period of the second period in which a central portion of the substrate to be processed that is supported by the support and the gas flow controller overlap with each other in the plane view.

11 . The substrate processing apparatus of claim 1 , wherein the first actuator and the second actuator are configured to allow the support supporting the substrate to be processed and the gas flow controller to reciprocate while maintaining a state in which the substrate to be processed that is supported by the support and the gas flow controller at least partially overlap with each other in the plane view.

12 . The substrate processing apparatus of claim 1 , wherein the gas flow controller includes a precursor gas flow controller and reaction gas flow controllers, and

wherein the reaction gas flow controllers are arranged to sandwich the precursor gas flow controller from both sides in a moving direction of the gas flow controller.

13 . The substrate processing apparatus of claim 12 , wherein the precursor gas flow controller includes a precursor gas supplier, a precursor gas exhauster installed at an outer periphery of the precursor gas supplier, an inert gas supplier installed at an outer periphery of the precursor gas exhauster, and inert gas exhausters installed at inner and outer peripheries of the inert gas supplier, and

wherein each of the reaction gas flow controllers includes a reaction gas supplier, a reaction gas exhauster installed at an outer periphery of the reaction gas supplier, an inert gas supplier installed at an outer periphery of the reaction gas exhauster, and inert gas exhausters installed at inner and outer peripheries of the inert gas supplier.

14 . The substrate processing apparatus of claim 1 , wherein the gas flow controller includes a first gas supplier and a first exhauster, and

wherein the gas flow controller further includes a second gas supplier and a second exhauster installed separately from the first gas supplier and the first exhauster and configured to perform gas supply to an inside of the process container and gas exhaust from the inside of the process container.

15 . The substrate processing apparatus of claim 1 , further comprising:

a mounting stand configured to support the gas flow controller and connected to the second actuator,

wherein a width of the mounting stand is larger than a width of the support supporting the substrate to be processed in the plane view.

16 . A method of manufacturing a semiconductor device, comprising:

supporting a substrate by a support in a process container;

forming a gas flow capable of making contact with the substrate by a gas flow controller in the process container;

processing the substrate by allowing the support supporting the substrate to reciprocate in the process container by a first actuator and allowing the gas flow controller having formed the gas flow to reciprocate in the process container in a direction opposite to a moving direction of the support by a second actuator, wherein each of the first actuator and the second actuator is fixed to a bottom of the process container; and

controlling the first actuator and the second actuator, by a controller, to:

(a) accelerate the support supporting the substrate and the gas flow controller, when the support supporting the substrate and the gas flow controller move toward each other during a first period in which the substrate supported by the support and the gas flow controller do not overlap with each other in a plane view;

(b) maintain a relative speed between the support supporting the substrate and the gas flow controller to be constant, during a second period in which the substrate supported by the support and the gas flow controller at least partially overlap with each other in the plane view, after (a); and

(c) decelerate the support supporting the substrate and the gas flow controller, when the support supporting the substrate and the gas flow controller move away from each other during the first period, after (b).

17 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

supporting a substrate by a support in a process container of the substrate processing apparatus;

forming a gas flow capable of making contact with the substrate by a gas flow controller in the process container;

processing the substrate by allowing the support supporting the substrate to reciprocate in the process container by a first actuator and allowing the gas flow controller having formed the gas flow to reciprocate in the process container in a direction opposite to a moving direction of the support by a second actuator, wherein each of the first actuator and the second actuator is fixed to a bottom of the process container; and

controlling the first actuator and the second actuator, by a controller, to:

(a) accelerate the support supporting the substrate and the gas flow controller, when the support supporting the substrate and the gas flow controller move toward each other during a first period in which the substrate supported by the support and the gas flow controller do not overlap with each other in a plane view;

(b) maintain a relative speed between the support supporting the substrate and the gas flow controller to be constant, during a second period in which the substrate supported by the support and the gas flow controller at least partially overlap with each other in the plane view, after (a); and

(c) decelerate the support supporting the substrate and the gas flow controller, when the support supporting the substrate and the gas flow controller move away from each other during the first period, after (b).