Method of analyzing semiconductor structure
View Patent ↗A method includes providing a detector disposed above a semiconductor structure; identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector, rotating the stage; and deriving a position of the portion of the semiconductor structure based upon the rotation of the stage.
1 . A method, comprising:
identifying a portion of a semiconductor structure at a temperature greater than a predetermined threshold by a detector;
rotating the semiconductor structure and detecting the portion of the semiconductor structure in different directions; and
deriving a three dimensional position of the portion of the semiconductor structure inside the semiconductor structure based upon the rotating the semiconductor structure,
wherein the rotating the semiconductor structure comprises rotating the semiconductor structure about a first axis of the semiconductor structure and a second axis of the semiconductor structure orthogonal to the first axis.
2 . The method of claim 1 , wherein the detector is stationary during the rotating the semiconductor structure.
3 . The method of claim 1 , further comprising:
recording the rotating the semiconductor structure after the identifying the portion of the semiconductor structure;
recording the three dimensional position of the portion of the semiconductor structure.
4 . The method of claim 1 , wherein the semiconductor structure is stacked dies including a plurality of dies stacking over each other.
5 . The method of claim 4 , wherein the portion of the semiconductor structure is covered by one or more of the plurality of dies.
6 . The method of claim 1 , wherein the rotating the semiconductor structure further includes rotating the semiconductor structure about a third axis of the semiconductor structure orthogonal to the first axis and the second axis.
7 . The method of claim 6 , further comprising recording a first rotation of the semiconductor structure about the first axis in a first angle, recording a second rotation of the semiconductor structure about the second axis in a second angle, or recording a third rotation of the semiconductor structure about the third axis in a third angle.
8 . The method of claim 1 , wherein a circuitry of the semiconductor structure is operated during the identifying the portion of the semiconductor structure.
9 . The method of claim 1 , wherein the temperature at the portion of the semiconductor structure is greater than a temperature at another portion of the semiconductor structure away from the portion of the semiconductor structure.
10 . The method of claim 1 , wherein a circuitry of the semiconductor structure is operated during the rotating the semiconductor structure.
11 . A method, comprising:
applying a voltage to a semiconductor structure and identifying a portion of the semiconductor structure at a temperature greater than a predetermined threshold by a detector;
rotating the detector around the semiconductor structure, wherein the detector detects the portion of the semiconductor structure in different directions; and
deriving a three dimensional position of the portion of the semiconductor structure inside the semiconductor structure based upon the portion of the semiconductor structure detected by the detector in the different directions.
12 . The method of claim 11 , wherein the semiconductor structure is stationary during the rotating the detector.
13 . The method of claim 11 , wherein the voltage is applied to the semiconductor structure during the rotating the detector.
14 . The method of claim 11 , wherein the detector is disposed above or under the semiconductor structure.
15 . The method of claim 11 , wherein a distance between the semiconductor structure and the detector is constant during the rotating the detector.
16 . The method of claim 11 , wherein the detector is rotated around the semiconductor structure in a circular or elliptical path.
17 . A method, comprising:
providing a detector and a semiconductor structure;
identifying a portion of the semiconductor structure at a temperature greater than a predetermined threshold by the detector;
rotating the semiconductor structure;
rotating the detector around the semiconductor structure in a circular or elliptical path and detecting the portion of the semiconductor structure in different directions; and
deriving a three dimensional position of the portion of the semiconductor structure inside the semiconductor structure based upon the rotating the semiconductor structure and the rotating the detector.
18 . The method of claim 17 , wherein the semiconductor structure and the detector are rotated simultaneously.
19 . The method of claim 17 , further comprising detecting infrared (IR) radiation emitted from the semiconductor structure by the detector during the rotating the detector and the rotating the semiconductor structure.
20 . The method of claim 17 , wherein the semiconductor structure is rotated about an axis of the semiconductor structure.