Semiconductor stitch structure and method for forming the same
A semiconductor structure includes a plurality of semiconductor dies, a first stitch structure disposed in the plurality of semiconductor dies, and a second stitch structure disposed in at least two adjacent semiconductor dies of the plurality of semiconductor dies. The semiconductor dies are arranged to form a column or a row. The first stitch structure crosses all interfaces between the semiconductor dies. The second stitch structure crosses an interface between the at least two adjacent semiconductor dies.
1 . A semiconductor structure comprising:
a plurality of semiconductor dies arranged to form a column or a row;
a first stitch structure disposed in the semiconductor dies, wherein the first stitch structure crosses at least two interfaces between the semiconductor dies; and
a second stitch structure disposed in at least two adjacent semiconductor dies of the plurality of semiconductor dies, wherein the second stitch structure crosses an interface between the two adjacent semiconductor dies,
wherein the first stitch structure and the second stitch structure individually have a serpentine shape.
2 . The semiconductor structure of claim 1 , wherein the first stitch structure and the second stitch structure comprise a same material.
3 . The semiconductor structure of claim 1 , wherein a width of the first stitch structure and a width of the second stitch structure have a ratio, and the ratio is between 0.95 and 1.05.
4 . The semiconductor structure of claim 1 , wherein a length of the first stitch structure is greater than a length of the second stitch structure.
5 . The semiconductor structure of claim 1 , wherein the first stitch structure comprises two first grating coupler segments disposed in a first semiconductor die of the plurality of semiconductor dies, and the second stitch structure comprises two second grating coupler segments disposed in a second semiconductor die of the plurality of the semiconductor dies.
6 . The semiconductor structure of claim 1 , wherein the first stitch structure comprises at least one first U-shaped segment disposed in a first semiconductor die of the plurality of semiconductor dies, and the second stitch structure comprises at least one second U-shaped segment disposed in a second semiconductor die of the plurality of semiconductor dies.
7 . The semiconductor structure of claim 5 , wherein the first stitch structure comprises a plurality of long segments disposed in the second semiconductor die of the plurality of the semiconductor dies.
8 . A semiconductor structure comprising:
a plurality of semiconductor dies arranged to form a column or a row;
a first stitch structure disposed in the semiconductor dies, wherein the first stitch structure crosses at least two interfaces between the semiconductor dies; and
a second stitch structure disposed in at least two adjacent semiconductor dies of the plurality of semiconductor dies, wherein the second stitch structure crosses an interface between the two adjacent semiconductor dies,
wherein the first stitch structure and the second stitch structure individually have a U shape.
9 . The semiconductor structure of claim 8 , wherein the first stitch structure and the second stitch structure comprise a same material.
10 . The semiconductor structure of claim 8 , wherein a width of the first stitch structure and a width of the second stitch structure have a ratio, and the ratio is between 0.95 and 1.05.
11 . The semiconductor structure of claim 8 , wherein a length of the first stitch structure is greater than a length of the second stitch structure.
12 . The semiconductor structure of claim 8 , wherein the first stitch structure comprises two first grating coupler segments disposed in a first semiconductor die of the plurality of semiconductor dies, and the second stitch structure comprises two second grating coupler segments disposed in a second semiconductor die of the plurality of the semiconductor dies.
13 . The semiconductor structure of claim 12 , wherein the first stitch structure comprises two long segments disposed in the second semiconductor die of the plurality of the semiconductor dies and coupled to the two first grating coupler segments.
14 . The semiconductor structure of claim 13 , wherein the first stitch structure comprises at least one first U-shaped segment disposed in a third semiconductor die of the plurality of semiconductor dies and coupled to the two long segments.
15 . The semiconductor structure of claim 12 , wherein the second stitch structure comprises at least one second U-shaped segment disposed in a third semiconductor die of the plurality of semiconductor dies and coupled to the two second grating coupler segments.
16 . A semiconductor structure comprising:
a plurality of semiconductor dies arranged to form a column or a row;
a first stitch structure disposed in the semiconductor dies, wherein the first stitch structure crosses at least two interfaces between the semiconductor dies; and
a second stitch structure disposed in at least two adjacent semiconductor dies of the plurality of semiconductor dies, wherein the second stitch structure crosses an interface between the two adjacent semiconductor dies,
wherein the first stitch structure comprises at least one first U-shaped segment disposed in a first semiconductor die of the plurality of semiconductor dies, and the second stitch structure comprises at least one second U-shaped segment disposed in a second semiconductor die of the plurality of semiconductor dies.
17 . The semiconductor structure of claim 16 , wherein the first stitch structure and the second stitch structure comprise a same material.
18 . The semiconductor structure of claim 16 , wherein a width of the first stitch structure and a width of the second stitch structure have a ratio, and the ratio is between 0.95 and 1.05.
19 . The semiconductor structure of claim 16 , wherein a length of the first stitch structure is greater than a length of the second stitch structure.
20 . The semiconductor structure of claim 16 , wherein the first stitch structure comprises two first grating coupler segments disposed in a third semiconductor die of the plurality of semiconductor dies, and the second stitch structure comprises two second grating coupler segments disposed in a fourth semiconductor die of the plurality of the semiconductor dies.