Systems and methods to reduce stiction in MEMS devices

1 . A microelectromechanical system (MEMS) device comprising:

a substrate;

a via supported by the substrate, the via comprising a first conductive layer, the via having a bottom and sidewalls;

a conductive member extending away from and supported by the via; and

a second conductive layer in the via over the first conductive layer along the bottom of the via and along the sidewalls of the via, wherein the second conductive layer comprises nitrogen.

2 . The MEMS device of claim 1 , wherein the second conductive layer further comprises titanium.

3 . The MEMS device of claim 1 , wherein there is no native oxide between the second conductive layer and the first conductive layer.

4 . The MEMS device of claim 1 , wherein the second conductive layer is not on the conductive member.

5 . The MEMS device of claim 1 , wherein the MEMS device further comprises a third conductive layer within the via on the second conductive layer.

6 . The MEMS device of claim 5 , wherein the third conductive layer comprises aluminum, titanium, or silicon.

7 . The MEMS device of claim 5 , wherein the third conductive layer is thicker than the second conductive layer.

8 . The MEMS device of claim 5 , wherein the first conductive layer has a first thickness, the second conductive layer has a second thickness, and the third conductive layer has a third thickness, and wherein the first thickness is greater than a combined thickness of the second and third thicknesses.

9 . The MEMS device of claim 5 , further comprising:

a native oxide layer on the third conductive layer and on the conductive member; and

a silicon oxide layer on the native oxide layer in the via.

10 . The MEMS device of claim 9 , further comprising a layer of silicon oxide within the via, the second conductive layer between the layer of silicon oxide and the first conductive layer.

11 . A microelectromechanical system (MEMS) device comprising:

a substrate;

a hinge;

a micromirror over the hinge; and

a via coupling the substrate and the hinge, the via comprising:

a first conductive layer; and

a second conductive layer on the first conductive layer.

12 . The MEMS device of claim 11 , wherein the second conductive layer comprises titanium and nitrogen.

13 . The MEMS device of claim 11 , wherein the first conductive layer comprises a metal that is different than the second conductive layer.

14 . The MEMS device of claim 11 , further comprising a third conductive layer on the second conductive layer.

15 . The MEMS device of claim 14 , wherein the third conductive layer comprises aluminum, titanium, and silicon.

16 . The MEMS device of claim 14 , wherein the third conductive layer is thicker than the second conductive layer, and the first conductive layer is thicker than the third conductive layer.

17 . A method of manufacturing a microelectromechanical system (MEMS) device, the method comprising:

forming an opening in a sacrificial material supported by a substrate;

depositing a first conductive layer over the sacrificial material, the first conductive layer extending into the opening;

depositing a second conductive layer on the first conductive layer, the second conductive layer deposited over the first conductive layer within the opening;

depositing a third conductive layer on the second conductive layer, the third conductive layer covering the second conductive layer within the opening;

removing the third conductive outside of the opening; and

removing the second conductive layer to expose the first conductive layer outside of the opening.

18 . The method of claim 17 , wherein depositing the second conductive layer and depositing the first conductive layer are performed in-situ.

19 . A method of manufacturing a microelectromechanical system (MEMS) device, the method comprising:

forming an opening in a sacrificial material supported by a substrate;

depositing a first conductive layer over the sacrificial material, the first conductive layer extending into the opening;

depositing a second conductive layer on the first conductive layer, the second conductive layer deposited over the first conductive layer within the opening;

removing the second conductive layer to expose the first conductive layer outside of the opening; and

patterning the first conductive layer to form a spring tip in the first conductive layer.