Semiconductor device manufacturing method
A method includes forming, over a substrate, an optical component and first, second and third thermal control mechanisms. The optical component includes first and second main paths, and first and second side paths each having opposite ends correspondingly coupled to the first and second main paths. The second side path is spaced from the first side path. Each of the first, second and third thermal control mechanisms includes a first thermoelectric member having a first conductivity type, a second thermoelectric member having a second conductivity type opposite to the first conductivity type, and a conductive structure that electrically connects the first thermoelectric member to the second thermoelectric member. The first side path is between the first and third thermal control mechanisms. The second side path is between the second and third thermal control mechanisms. The third thermal control mechanism is between the first and second side paths.
1 . A method of manufacturing a semiconductor structure, the method comprising:
forming, over a substrate, an optical component comprising:
a first main path;
a second main path;
a first side path having opposite ends correspondingly coupled to the first and second main paths; and
a second side path spaced from the first side path, and having opposite ends correspondingly coupled to the first and second main paths; and
forming, over the substrate, first, second and third thermal control mechanisms, each comprising:
a first thermoelectric member having a first conductivity type;
a second thermoelectric member having a second conductivity type opposite to the first conductivity type; and
a conductive structure that electrically connects the first thermoelectric member to the second thermoelectric member,
wherein
the first side path is between the first and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the first and third thermal control mechanisms,
the second side path is between the second and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the second and third thermal control mechanisms, and
the third thermal control mechanism is between the first and second side paths.
2 . The method of claim 1 , wherein at least one of the first thermoelectric member or the second thermoelectric member comprises at least one of doped Si, Bi 2 Te 3 , SiGe, or PbTe.
3 . The method of claim 1 , wherein each of the first, second and third thermal control mechanisms further comprises a third thermoelectric member and a fourth thermoelectric member, wherein
the third thermoelectric member is of a same conductivity as the first thermoelectric member;
the fourth thermoelectric member is of a same conductivity as the second thermoelectric member;
the first thermoelectric member, the second thermoelectric member, the third thermoelectric member, and the fourth thermoelectric member are aligned in a column along the first side path and the second side path;
the second thermoelectric member is positioned between the first thermoelectric member and the third thermoelectric member in the column; and
the third thermoelectric member is positioned between the second thermoelectric member and the fourth thermoelectric member in the column.
4 . The method of claim 1 , further comprising:
forming a thermal isolation material over the substrate and between the optical component and the first and second thermoelectric members of the first, second and third thermal control mechanisms.
5 . The method of claim 1 , further comprising:
forming at least one conductive via extending from a first surface of the substrate, over which the first, second and third thermal control mechanisms are formed, through a thickness of the substrate, to a second surface of the substrate, the second surface opposite the first surface; and
forming a heat sink on the second surface of the substrate,
wherein the at least one conductive via connects the heat sink to the first thermoelectric member and the second thermoelectric member of at least one of the first, second and third thermal control mechanisms, and
wherein, along a first axis along which the first side path is between the first and third thermal control mechanisms, the second side path is between the second and third thermal control mechanisms, and the third thermal control mechanism is between the first and second side paths,
the heat sink extends continuously from under the second thermal control mechanism, across an entire width of the second side path, to under the third thermal control mechanism.
6 . The method of claim 5 , wherein
the at least one conductive via comprises a plurality of conductive vias formed around at least one of
the optical component,
the first thermal control mechanism,
the second thermal control mechanism, or
the third thermal control mechanism.
7 . The method of claim 1 , further comprising:
forming, over the substrate, a temperature sensing circuit
wherein, along a first axis along which the first side path is between the first and third thermal control mechanisms, the second side path is between the second and third thermal control mechanisms, and the third thermal control mechanism is between the first and second side paths,
the temperature sensing circuit is between the second side path and one of the second and third thermal control mechanisms.
8 . The method of claim 7 , wherein the temperature sensing circuit comprises a bandgap temperature sensor.
9 . The method of claim 7 , wherein the temperature sensing circuit comprises one or more thermal sensing devices located at a distance between 0.028 micrometers and 0.5 micrometers from the second side path.
10 . The method of claim 9 , wherein
the one or more thermal sensing devices comprises a pair of bipolar junction transistors, and
along the first axis, the bipolar junction transistors are formed between the second side path and the second thermal control mechanism.
11 . A method of manufacturing a semiconductor structure, comprising:
forming, over a substrate, an optical component having a first main path that splits into a first side path and a second side path spaced from the first side path;
forming, over the substrate, first, second and third thermal control mechanisms, each comprising:
a first thermoelectric member having a first conductivity type; and
a second thermoelectric member having a second conductivity type opposite to the first conductivity type,
wherein, along a first axis,
the first side path is between the first and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the first and third thermal control mechanisms,
the second side path is between the second and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the second and third thermal control mechanisms, and
the third thermal control mechanism is between the first and second side paths; and
forming, over the substrate, at least one thermal sensing device which is, along the first axis, between the second side path and the second thermal control mechanism.
12 . The method of claim 11 , wherein at least one of
the at least one thermal sensing device comprises a bandgap temperature sensor,
the at least one thermal sensing device is located at a distance between 0.028 micrometers and 0.5 micrometers from the second side path, or
the at least one thermal sensing device comprises a pair of bipolar junction transistors.
13 . The method of claim 11 , further comprising:
forming a conductor overlapping the first side path in a thickness direction of the substrate,
wherein the conductor and the first side path are elongated along a second axis transverse to the first axis.
14 . The method of claim 13 , wherein
along the first axis, a width of the conductor is smaller than a width of the first side path.
15 . The method of claim 11 , further comprising:
forming a control circuit; and
forming one or more conductive members which
connect the at least one thermal sensing device to the control circuit, to transmit signals based on a temperature of the second side path sensed by the at least one thermal sensing device to the control circuit; and
connect the control circuit to at least one of the first thermal control mechanism, the second thermal control mechanism, or the third thermal control mechanism, for the control circuit to control a current through the at least one of the first thermal control mechanism, the second thermal control mechanism, or the third thermal control mechanism, based on the sensed temperature.
16 . The method of claim 13 , further comprising:
forming, over the substrate, a control circuit;
forming a first conductive structure electrically coupling the control circuit to the first thermal control mechanism; and
forming a second conductive structure electrically coupling the control circuit to the second thermal control mechanism, wherein
the first conductive structure comprises a first set of conductors serially connecting the thermoelectric members of the first thermal control mechanism,
the second conductive structure comprises a second set of conductors serially connecting the thermoelectric members of the second thermal control mechanism, and
along the first axis, the conductor is between the first set of conductors and the second set of conductors.
17 . The method of claim 13 ,
wherein, along the second axis, the conductor extends continuously over and along an entire length of the first side path.
18 . The method of claim 11 , further comprising:
forming at least one conductive via extending from a first surface of a substrate, over which the first, second and third thermal control mechanisms are formed, through a thickness of the substrate, to a second surface of the substrate, the second surface opposite the first surface; and
forming a heat sink on the second surface of the substrate,
wherein the at least one conductive via is connected to the heat sink, and
wherein, along a first axis along which the first side path is between the first and third thermal control mechanisms, the second side path is between the second and third thermal control mechanisms, and the third thermal control mechanism is between the first and second side paths,
the heat sink extends continuously from under the first thermal control mechanism, across an entire width of the first side path, to under the third thermal control mechanism.
19 . The method of claim 11 , wherein at least one of the first thermoelectric member or the second thermoelectric member comprises at least one of doped Si, Bi 2 Te 3 , SiGe, or PbTe.
20 . A method of manufacturing a semiconductor structure, comprising:
forming, over a substrate, an optical component having a first main path that splits into a first side path and a second side path spaced from the first side path;
forming, over the substrate, first, second and third thermal control mechanisms, each comprising:
a first thermoelectric member having a first conductivity type; and
a second thermoelectric member having a second conductivity type opposite to the first conductivity type,
wherein, along a first axis,
the first side path is between the first and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the first and third thermal control mechanisms,
the second side path is between the second and third thermal control mechanisms such that no additional side paths or thermal control mechanisms are located between the second and third thermal control mechanisms, and
the third thermal control mechanism is between the first and second side paths;
forming a conductor overlapping the first side path in a thickness direction of the substrate, wherein
the conductor and the first side path are elongated along a second axis transverse to the first axis, and
along the second axis, the conductor extends continuously over and along an entire length of the first side path;
forming, over the substrate, a control circuit;
forming a first conductive structure electrically coupling the control circuit to the first thermal control mechanism; and
forming a second conductive structure electrically coupling the control circuit to the second thermal control mechanism,
wherein
the first conductive structure comprises a first set of conductors serially connecting the thermoelectric members of the first thermal control mechanism,
the second conductive structure comprises a second set of conductors serially connecting the thermoelectric members of the second thermal control mechanism,
along the first axis, the conductor is between the first set of conductors and the second set of conductors.