Substrate with multilayer reflective film, reflective mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device
A substrate with a multilayer reflective film, a reflective mask blank, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device capable of preventing film peeling of a multilayer reflective film due to cleaning or the like during a mask manufacturing process and use of a mask, and reducing occurrence of defects on an absorber film due to the film peeling of the multilayer reflective film.
1 . A substrate with a multilayer reflective film comprising: a substrate and a multilayer reflective film formed on a main surface of the substrate, wherein
the multilayer reflective film comprises a high refractive index layer and a low refractive index layer alternately layered,
the high refractive index layer comprises Si, and the low refractive index layer comprises a transition metal,
an outermost periphery of the multilayer reflective film comprises a compound comprising the Si and the transition metal, and
a ratio of a content (atomic %) of the Si to a total content (atomic %) of the Si and the transition metal in the compound is 0.10 or more and 0.50 or less.
2 . The substrate with a multilayer reflective film according to claim 1 , wherein the compound comprises oxygen.
3 . The substrate with a multilayer reflective film according to claim 2 , wherein a content of the oxygen in the compound is 0.5 atomic % or more and 75 atomic % or less.
4 . The substrate with a multilayer reflective film according to claim 3 , further comprising a protective film formed on the multilayer reflective film.
5 . The substrate with a multilayer reflective film according to claim 2 , further comprising a protective film formed on the multilayer reflective film.
6 . The substrate with a multilayer reflective film according to claim 1 , further comprising a protective film formed on the multilayer reflective film.
7 . The substrate with a multilayer reflective film according to claim 1 , wherein the transition metal comprises Ru, Rh, or Pt.
8 . The substrate with a multilayer reflective film according to claim 1 , wherein the compound comprises molybdenum silicide.
9 . The substrate with a multilayer reflective film according to claim 1 , wherein in the outermost periphery of the multilayer reflective film, an interface between the high refractive index layer and the low refractive index layer is eliminated and replaced with the compound.
10 . A reflective mask blank comprising: a substrate, a multilayer reflective film formed on a main surface of the substrate, and an absorber film, wherein
the multilayer reflective film comprises a high refractive index layer and a low refractive index layer alternately layered,
the high refractive index layer comprises Si, and the low refractive index layer comprises a transition metal,
an outermost periphery of the multilayer reflective film comprises a compound comprising the Si and the transition metal, and
a ratio of a content (atomic %) of the Si to a total content (atomic %) of the Si and the transition metal in the compound is 0.10 or more and 0.50 or less.
11 . The reflective mask blank according to claim 10 , wherein the compound comprises oxygen.
12 . The reflective mask blank according to claim 11 , wherein a content of the oxygen in the compound is 0.5 atomic % or more and 75 atomic % or less.
13 . The reflective mask blank according to claim 12 , further comprising a protective film formed between the multilayer reflective film and the absorber film, wherein the protective film is formed of a material having different etching selectivity from the absorber film.
14 . The reflective mask blank according claim 12 , further comprising a resist film formed on the absorber film.
15 . The reflective mask blank according to claim 14 , wherein an end portion of an outer periphery of the resist film is located above an outermost periphery of the multilayer reflective film formed of the compound.
16 . The reflective mask blank according to claim 11 , further comprising a protective film formed between the multilayer reflective film and the absorber film, wherein the protective film is formed of a material having different etching selectivity from the absorber film.
17 . The reflective mask blank according claim 11 , further comprising a resist film formed on the absorber film.
18 . The reflective mask blank according to claim 17 , wherein an end portion of an outer periphery of the resist film is located above an outermost periphery of the multilayer reflective film formed of the compound.
19 . The reflective mask blank according to claim 10 , further comprising a protective film formed between the multilayer reflective film and the absorber film, wherein the protective film is formed of a material having different etching selectivity from the absorber film.
20 . The reflective mask blank according to claim 10 , further comprising a resist film formed on the absorber film.
21 . The reflective mask blank according to claim 20 , wherein an end portion of an outer periphery of the resist film is located above an outermost periphery of the multilayer reflective film formed of the compound.
22 . A method for manufacturing a reflective mask, the method comprising preparing the reflective mask blank according to claim 20 and patterning the absorber film to form an absorber pattern on the multilayer reflective film.
23 . A method for manufacturing a semiconductor device, the method comprising transferring an absorber pattern onto a resist film on a semiconductor substrate using a reflective mask obtained by the method for manufacturing a reflective mask according to claim 22 .