Tin(II) amide/alkoxide precursors for EUV-patternable films
The invention provides certain mixed Sn (II) amide/alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and/or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.
1 . A precursor composition comprising a compound of Formula (III):
wherein R is C 1 -C 4 alkyl and R 1 is C 1 -C 5 alkyl.
2 . The composition of claim 1 , wherein the composition contains no more than 100 ppm of materials which are other than compounds of Formulae (I), (II), and (III), wherein Formulae (I) and (II) are:
wherein R is C 1 -C 4 alkyl and R 1 is C 1 -C 5 alkyl.
3 . The precursor composition of claim 1 , wherein R is methyl, and R 1 is chosen from methyl, ethyl, isopropyl, t-butyl, and neopentyl.
4 . The precursor composition of claim 1 , wherein R is methyl and R 1 is methyl.
5 . The precursor composition of claim 1 , wherein R is methyl and R 1 is ethyl.
6 . The precursor composition of claim 1 , wherein R is methyl and R 1 is isopropyl.
7 . The precursor composition of claim 1 , wherein R is methyl and R 1 is neopentyl.
8 . The precursor composition of claim 1 , wherein R is methyl and R 1 is tert-butyl.
9 . The precursor composition of claim 1 , wherein the composition further comprises a compound of Formula (I),
wherein R is C 1 -C 4 alkyl and R 1 is C 1 -C 5 alkyl.
10 . The precursor composition of claim 1 , wherein the composition further comprises a compound of Formula (II),
wherein R is C 1 -C 4 alkyl and R 1 is C 1 -C 5 alkyl.