IP Library Granted Patent US 12675230
Granted Patent B2
US 12675230 · App. 18/748,715 · Granted Jul 7, 2026

Wordline leakage test management

Inventors: Wai Leong Chin (Singapore, SG); Francis Chee Khai Chew (Singapore, SG); Trismardawi Tanadi (Folsom, CA); Chun Sum Yeung (San Jose, CA); Lawrence Dumalag (Folsom, CA); Ekamdeep Singh (San Jose, CA)
Assignee: Micron Technology, Inc.
G06F3/064G06F3/0604G06F3/0653G06F3/0679G06F12/0646G06F2212/7202G06F2212/7204G06F2212/7206
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12675230
App. No.
18/748,715
Granted
Jul 7, 2026
Kind
B2
Abstract

A memory sub-system causing execution of a first wordline leakage test of a first wordline group of a set of wordline groups of a memory block in response to determining a temperature of the memory block is within a threshold temperature range. A first result of the first wordline leakage test is determined. A second wordline leakage test of a second wordline group is caused to be executed and a second result is determined. A determination is made that the first result of the first wordline leakage test of the first wordline group satisfies a first condition. A determination is made that the second result of the second wordline leakage test of the second wordline group satisfies a second condition. In response to satisfaction of the conditions, an action is executed.

Claims (41)

1 . A system comprising:

a memory device; and

a processing device, operatively coupled with the memory device, to perform operations comprising:

determining that a media endurance metric associated with a memory block of the memory device is greater than a media endurance metric threshold level;

in response to determining that the media endurance metric associated with the memory block is greater than the media endurance metric threshold level, determining that a temperature of the memory block of the memory device is within a threshold temperature range;

in response to determining that the temperature is within the threshold temperature range:

causing execution of an erase operation to produce an erased memory block; and

causing execution of a wordline leakage test of each wordline group of a set of wordline groups of the erased memory block;

determining a result of the wordline leakage test of each wordline group of the set of wordline groups;

determining the result of the wordline leakage test of each wordline group of the set of wordline groups satisfies a condition; and

executing an action in response to the result of the wordline leakage test of each wordline group of the set of wordline groups satisfying the condition.

2 . The system of claim 1 , wherein the condition is satisfied when each wordline group passes the wordline leakage test.

3 . The system of claim 1 , wherein the action comprises releasing the erased memory block to a garbage collection pool associated with the memory device.

4 . The system of claim 1 , wherein the action is executed following determining that a last wordline group of the set of wordline groups satisfies the condition.

5 . The system of claim 1 , wherein the media endurance metric-comprises a program/erase cycle (PEC) count.

6 . A method comprising:

determining that a media endurance metric associated with a memory block of a memory device is greater than a media endurance metric threshold level;

in response to determining that the media endurance metric associated with the memory block is greater than the media endurance metric threshold level, determining that a temperature of the memory block of the memory device is within a threshold temperature range;

in response to determining that the temperature is within the threshold temperature range:

causing execution of an erase operation to produce an erased memory block; and

causing execution of a wordline leakage test of each wordline group of a set of wordline groups of the erased memory block;

determining a result of the wordline leakage test of each wordline group of the set of wordline groups;

determining the result of the wordline leakage test of each wordline group of the set of wordline groups satisfies a condition; and

executing an action in response to the result of the wordline leakage test of each wordline group of the set of wordline groups satisfying the condition.

7 . The method of claim 6 , wherein the condition is satisfied when each wordline group of the set of wordline groups passes the wordline leakage test.

8 . The method of claim 6 , wherein the action comprises releasing the erased memory block to a garbage collection pool associated with the memory device.

9 . The method of claim 6 , wherein the action is executed following determining that a last wordline group of the set of wordline groups satisfies the condition.

10 . The method of claim 6 , wherein the media endurance metric-comprises a program/erase cycle (PEC) count.

11 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

determining that a media endurance metric associated with a memory block of a memory device is greater than a media endurance metric threshold level;

in response to determining that the media endurance metric associated with the memory block is greater than the media endurance metric threshold level, determining that a temperature of the memory block is within a threshold temperature range;

in response to determining that the temperature is within the threshold temperature range:

causing execution of an erase operation to produce an erased memory block; and

causing execution of a wordline leakage test of each wordline group of a set of wordline groups of the erased memory block;

determining a result of the wordline leakage test of each wordline group of the set of wordline groups;

determining the result of the wordline leakage test of each wordline group of the set of wordline groups satisfies a condition; and

executing an action in response to the result of the wordline leakage test of each wordline group of the set of wordline groups satisfying the condition.

12 . The non-transitory computer-readable storage medium of claim 11 , wherein the condition is satisfied when each wordline group of the set of wordline groups passes the wordline leakage test.

13 . The non-transitory computer-readable storage medium of claim 11 , wherein the action comprises releasing the erased memory block to a garbage collection pool associated with the memory device.

14 . The non-transitory computer-readable storage medium of claim 11 , wherein the action is executed following determining that a last wordline group of the set of wordline groups satisfies the condition.

15 . The non-transitory computer-readable storage medium of claim 11 , wherein the media endurance metric-comprises a program/erase cycle (PEC) count.