Memory die family classification method
Processing logic of a memory sub-system to measure a set of slow charge loss (SCL) values, wherein each SCL value of the set of slow charge loss values corresponds to a memory die of a set of memory dies of a memory sub-system. An ordered SCL index based on the set of SCL values is generated. Using a die family threshold level, a set of ranges of the ordered SCL index is identified. Each range of the set of ranges is assigned to a corresponding die family of a set of die families.
1 . A method comprising:
measuring, by a controller of a memory sub-system operatively coupled to a set of memory dies, a set of slow charge loss (SCL) values corresponding to the set of memory dies, wherein each SCL value of the set of slow charge loss values corresponds to a memory die of the set of memory dies of the memory sub-system;
generating an ordered SCL index based on the set of SCL values, wherein the ordered SCL index comprises the SCL value for each memory die ranked from a lowest SCL value to a highest SCL value;
identifying, using a die family threshold level comprising a percentage of the set of memory dies, a set of ranges of the ordered SCL index, wherein each range of the set of ranges comprises the percentage of the set of memory dies of the ordered SCL index; and
assigning each range of the set of ranges to a corresponding die family of a set of die families.
2 . The method of claim 1 , wherein the set of SCL values are measured at a time-after-programming point associated with the memory sub-system.
3 . The method of claim 1 , further comprising assigning a bin pointer associated with a voltage offset bin of a set of voltage offset bins to each die family of the set of die families.
4 . A system comprising:
a set of memory dies; and
a controller of a memory sub-system, operatively coupled to the set of memory dies, the controller to perform operations comprising:
measuring a set of slow charge loss (SCL) values corresponding to the set of memory dies, wherein each SCL value of the set of slow charge loss values corresponds to a memory die of the set of memory dies of the memory sub-system;
generating an ordered SCL index based on the set of SCL values, wherein the ordered SCL index comprises the SCL value for each memory die ranked from a lowest SCL value to a highest SCL value;
identifying, using a die family threshold level comprising a percentage of the set of memory dies, a set of ranges of the ordered SCL index, wherein each range of the set of ranges comprises the percentage of the set of memory dies of the ordered SCL index; and
assigning each range of the set of ranges to a corresponding die family of a set of die families.
5 . The system of claim 4 , wherein the set of SCL values are measured at a time-after-programming point associated with the memory sub-system.
6 . The system of claim 4 , the operations further comprising assigning a bin pointer associated with a voltage offset bin of a set of voltage offset bins to each die family of the set of die families.
7 . A non-transitory computer-readable storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
measuring a set of slow charge loss (SCL) values corresponding to the set of memory dies, wherein each SCL value of the set of slow charge loss values corresponds to a memory die of the set of memory dies of the memory sub-system;
generating an ordered SCL index based on the set of SCL values, wherein the ordered SCL index comprises the SCL value for each memory die ranked from a lowest SCL value to a highest SCL value;
identifying, using a die family threshold level comprising a percentage of the set of memory dies, a set of ranges of the ordered SCL index, wherein each range of the set of ranges comprises the percentage of the set of memory dies of the ordered SCL index; and
assigning each range of the set of ranges to a corresponding die family of a set of die families.
8 . The non-transitory computer-readable storage medium of claim 7 , wherein the set of SCL values are measured at a time-after-programming point associated with the memory sub-system.
9 . The non-transitory computer-readable storage medium of claim 7 , wherein each range of the set of ranges comprises an equal portion of the set of memory dies.